KR-20260065858-A - Assembly substrate structure for display pixels, semiconductor light-emitting device package for display pixels, and display device including the same

KR20260065858AKR 20260065858 AKR20260065858 AKR 20260065858AKR-20260065858-A

Abstract

The embodiments relate to an assembly substrate structure for a display pixel, a semiconductor light-emitting element package for a display pixel, and a display device including the same. An assembly substrate structure for a display pixel according to an embodiment may include a circular first assembly hole disposed in a first region of a predetermined assembly substrate, a second assembly hole disposed in a second region of the assembly substrate, and an elliptical third assembly hole disposed in a third region of the assembly substrate. The first assembly hole, the second assembly hole, and the third assembly hole may each include a width in the first direction and a width in the second direction perpendicular to the first direction. The increase in the width of the first direction of the second assembly hole and the third assembly hole can be increased by a predetermined exclusive interval based on the width of the first direction of the first assembly hole.

Inventors

김명수
박성진
박창서
김건호
김정섭

Assignees

엘지전자 주식회사

Dates

Publication Date: 20260511
Application Date: 20230824

Claims (16)

A circular first assembly hole disposed in a first area of a predetermined assembly board; A second assembly hole disposed in a second region of the assembly substrate; and It includes an elliptical third assembly hole disposed in a third region of the assembly substrate; and The first assembly hole, the second assembly hole, and the third assembly hole each include a width in the first direction and a width in the second direction perpendicular to the first direction, and The increase in the width of the first direction of the second assembly hole and the third assembly hole increases at a predetermined exclusive interval based on the width of the first direction of the first assembly hole, An assembly substrate structure for a display pixel, wherein the reduction in the width of the second direction of the second assembly hole and the third assembly hole is intersected with the reduction in the width of the second direction of the first assembly hole.
In paragraph 1, An assembly substrate structure for a display pixel, wherein the reduction in width in the second direction of the second assembly hole is greater than the reduction in width in the second direction of the third assembly hole.
In paragraph 2, An assembly substrate structure for a display pixel, wherein the width of the second direction of the second assembly hole is smaller than the width of the second direction of the third assembly hole.
In paragraph 1, The above second assembly hole is, An assembly substrate structure for a display pixel, comprising arcs on the upper and lower sides of a horizontal cross section.
In paragraph 4, An assembly substrate structure for a display pixel, wherein the upper and lower sides of the horizontal cross-section of the second assembly hole include a predetermined arc with half the width length of the first direction.
In paragraph 1, An assembly substrate structure for a display pixel, wherein the horizontal cross-section of the second assembly hole includes a symmetrical shape with a constricted middle.
In paragraph 1, The horizontal cross-section of the second assembly hole (301b) above includes a dumbbell shape with a constricted middle, forming an assembly substrate structure for a display pixel.
A circular first semiconductor light-emitting element disposed in a first region of a predetermined assembly substrate; A second semiconductor light-emitting element disposed in a second region of the assembly substrate; and It includes an elliptical third semiconductor light-emitting element disposed in a third region of the assembly substrate; The first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element each include a width in a first direction and a width in a second direction perpendicular to the first direction, and The increase in the width of the first direction of the second semiconductor light-emitting element and the third semiconductor light-emitting element increases by a predetermined exclusive interval based on the width of the first direction of the first semiconductor light-emitting element, A semiconductor light-emitting element package for a display pixel, wherein the reduction in the width of the second direction of the second semiconductor light-emitting element and the third semiconductor light-emitting element is intersected with the reduction in the width of the second direction of the first semiconductor light-emitting element.
In paragraph 8, A semiconductor light-emitting element package for a display pixel, wherein the reduction in width in the second direction of the second semiconductor light-emitting element is greater than the reduction in width in the second direction of the third semiconductor light-emitting element.
In Paragraph 9, A semiconductor light-emitting device package for a display pixel, wherein the width in the second direction of the second semiconductor light-emitting device is smaller than the width in the second direction of the third semiconductor light-emitting device.
In paragraph 8, The above second semiconductor light-emitting device is, A semiconductor light-emitting device package for a display pixel, comprising arcs on the upper and lower sides of a horizontal cross section.
In Paragraph 11, A semiconductor light-emitting device package for a display pixel, wherein the upper and lower sides of the horizontal cross-section of the second semiconductor light-emitting device include a predetermined arc with half the width length of the first direction.
In paragraph 8, A semiconductor light-emitting device package for a display pixel, wherein the horizontal cross-section of the second semiconductor light-emitting device includes a symmetrical shape with a constricted middle.
In claim 8, the horizontal cross-section of the second semiconductor light-emitting element (301b) includes a dumbbell shape with a constricted middle, for a semiconductor light-emitting element package for a display pixel.
A display device comprising a semiconductor light-emitting element, comprising an assembly substrate structure for a display pixel according to claims 1 to 7.
A display device comprising a semiconductor light-emitting element, comprising a semiconductor light-emitting element package for a display pixel according to claims 8 to 14.

Description

Assembly substrate structure for display pixels, semiconductor light-emitting device package for display pixels, and display device including the same A structure for an assembly substrate for display pixels, semiconductor light-emitting device package for display pixels, and a display device including the same The embodiments relate to an assembly substrate structure for a display pixel, a semiconductor light-emitting element package for a display pixel, and a display device including the same. Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays. A micro-LED display is a display that uses a micro-LED, which is a semiconductor light-emitting element having a diameter or cross-sectional area of 100 μm or less, as a display element. Because micro-LED displays use micro-LEDs, which are semiconductor light-emitting devices, as display elements, they possess excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance. In particular, micro-LED displays have the advantage of being able to freely adjust size or resolution by separating and combining screens in a modular manner, and also have the advantage of enabling the implementation of flexible displays. However, since large micro-LED displays require millions of micro-LEDs, there is a technical challenge in rapidly and accurately transferring the micro-LEDs to the display panel. Recently developed transfer technologies include the pick-and-place process, the laser lift-off method, and the self-assembly method. Among these, the self-assembly method is a technique in which semiconductor light-emitting elements autonomously find their assembly positions within a fluid, making it advantageous for the implementation of large-screen display devices. Recently, U.S. Patent No. 9,825,202 and others have presented micro-LED structures suitable for self-assembly, but research on the technology for manufacturing displays through the self-assembly of micro-LEDs is still insufficient. In particular, in conventional technology, when rapidly transferring millions of semiconductor light-emitting elements onto a large display, while the transfer speed can be improved, there is a technical problem in that the transfer error rate may increase, resulting in a low transfer yield. In related technologies, a self-assembly transfer process using dielectrophoresis (DEP) is being attempted, but there is a problem with a low self-assembly rate due to factors such as the non-uniformity of the DEP force. Meanwhile, according to undisclosed internal technology, the simultaneous assembly of red (R) micro LED chips, green (G) micro LED chips, and blue (B) LED chips using dielectrophoresis is being researched. However, research was conducted on the exclusivity of chip shapes by making the horizontal cross-sectional shapes of the R, G, and B LED chips different so that the R, G, and B LED chips could be accurately assembled into their respective assembly holes. For example, according to undisclosed internal technology, the horizontal cross-section of the R LED chip is made into a circular cross-section, and based on this, the long axis is extended and the short axis is reduced at regular intervals to form two elliptical shapes, thereby producing B LED and G LED, and assembly hole patterns (one circular and two elliptical) corresponding to these circular and elliptical LEDs are formed on a substrate. In addition, spaced assembly electrodes were formed inside the assembly hole to allow for LED assembly, and each assembly electrode was positioned to overlap the LED chip. Subsequently, an electric field was formed between two opposing assembly electrodes to assemble the micro-LED using dielectrophoretic force. However, according to internal research, even with the shape exclusivity of R, G, and B LED chips, a problem was investigated where the assembly rate was low due to the reduction in DEP force of elliptical LED chips, as the difference in DEP force increased as the area difference between elliptical and circular LED chips grew. In particular, the adoption of micro LED displays is being researched for UHD (Ultra High Definition) TVs such as 4K and 8K, as well as VR, AR, and XR. Micro LEDs used in these UHD TVs, VR, AR, and XR are required to have a size of 20 μm or less, for example, 10 μm or less. However, in order to secure exclusivity, which is the spacing of shape differences between R, G, and B LED chips in internal technology, it is being researched that the size of the standard circular chip must be at least 42μm or larger in order to exclusively implement the other two elliptical-shaped chips. Accordingly, according to internal technology, we are facing a contradiction in that we cannot reduce the size of R, G, and B LED chips to less than 42 μm in order to secure shape exclusivity among the R, G, and B LED ch