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KR-20260065867-A - Low vapor pressure precursor dosage control

KR20260065867AKR 20260065867 AKR20260065867 AKR 20260065867AKR-20260065867-A

Abstract

A method and apparatus for controlling the dosage of a low vapor pressure reactant comprises a processing chamber (110) for processing substrates, an inert gas source system, a first inlet line (130) connecting the inert gas source system to the processing chamber (110), a precursor source vessel (150) for housing a low vapor pressure precursor (160), a second inlet line (185) connecting the inert gas source system to a buffer volume (180) including a head space (155) of the source vessel (150), and a third inlet line (170) connecting the source vessel (150) to the first inlet line (130) through the buffer volume (180) via a first pulsing valve (V1), wherein the apparatus (100) is configured to adjust the pressure in the buffer volume (180) to a predetermined level during the purge phase of the process cycle.

Inventors

  • 블롬버그, 톰

Assignees

  • 피코순 오와이

Dates

Publication Date
20260511
Application Date
20240726
Priority Date
20230907

Claims (20)

  1. As a device (100), Processing chamber (110) for processing substrates; Inert gas source system; A first inlet line (130) connecting the above inert gas source system to the processing chamber (110); Source container (150) for housing a low vapor pressure precursor (160); A second inlet line (185) connecting the above inert gas source system to a buffer volume (180) including a head space (155) of the source container (150); It includes a third inlet line (170) that connects the source container (150) to the first inlet line (130) through the buffer volume (180) and the first pulsing valve (V1). The above device (100) is configured to adjust the pressure in the buffer volume (180) to a predetermined level during the purge phase of the process cycle.
  2. In paragraph 1, A device (100) wherein the first inlet line (130) is configured to provide a first inert gas flow to the processing chamber (110), and the second inlet line (185) is configured to provide a second inert gas flow to the buffer volume (180).
  3. In paragraph 1 or 2, The device (100), wherein the first pulsing valve (V1) has a first open-closed timing cycle configured to control the dose of precursor from the buffer volume (180) to the first inflow line (130) during the process cycle.
  4. In any one of paragraphs 1 through 3, A device (100) comprising a first flow control means (140) in the first inlet line (130) upstream of the first pulsing valve (V1) to control the first inert gas flow.
  5. In paragraph 4, The above first inert gas flow is constant, device (100).
  6. In any one of paragraphs 1 through 5, A device (100) configured to enter an idle phase in response to achieving a predetermined pressure level in the buffer volume (180) during a fuzzy phase.
  7. In any one of paragraphs 1 through 6, A device (100) comprising a first restriction (R1) between the first pulsing valve (V1) and the buffer volume (180).
  8. In any one of paragraphs 1 through 7, The above buffer volume (180) is a device (100) comprising an additional gas storage volume (175) configured to provide an additional buffer volume.
  9. In any one of paragraphs 1 through 8, A device (100) comprising one or more inert gas sources (120a, 120b).
  10. In any one of paragraphs 1 through 9, A device (100) comprising a second pulsing valve (V2) in the second inlet line (185), wherein the second pulsing valve (V2) is configured to control a second inert gas flow into the buffer volume (180) so that the pressure in the buffer volume (180) can be adjusted to a predetermined level during the purge phase of the process cycle.
  11. In Paragraph 10, The device (100), wherein the second pulsing valve (V2) has a second open-close timing cycle coordinated with the first open-close timing cycle of the first pulsing valve (V1).
  12. In Article 10 or Article 11, A device (100) wherein the second pulsing valve (V2) is configured to be open during the pulse of the first pulsing valve (V1).
  13. In Paragraph 12, The device (100), wherein the second pulsing valve (V2) remains open until a predetermined pressure level in the buffer volume (180) is achieved when entering the purge phase after the reactant pulse through the first pulsing valve (V1).
  14. In any one of paragraphs 10 through 13, A device (100) comprising a second flow control means (190) in the second inlet line (185) upstream of the second pulsing valve (V2) configured to control the second inert gas flow.
  15. In Paragraph 14, The above second flow control means (190) is a device (100) including a second limiting part (R2).
  16. In paragraph 14 or 15, The second flow control means (190) includes a pressure controller, and the pressure controller is configured to receive data from a pressure transducer (410) located in the buffer volume (180) to control the second inert gas flow to the second pulsing valve (V2), device (100).
  17. In any one of paragraphs 14 through 16, A device (100) comprising a check valve (310) upstream of the second pulsing valve (V2).
  18. In any one of paragraphs 14 through 17, The second pulsing valve (V2) is closed in the idle phase to prevent backflow from the source vessel (150), and in the idle phase, the first pulsing valve (V1) allows a first inert gas flow to the processing chamber (110), but the precursor pulse is blocked, and the pressure in the buffer volume (180) is at a predetermined level, device (100).
  19. In any one of paragraphs 1 through 18, A device (100) comprising a control unit (510) configured to control the opening-closing timing cycles of the first pulsing valve (V1) and the second pulsing valve (V2).
  20. In Paragraph 19, The control unit (510) is configured to control the second pulsing valve (V2) based on a feedback loop, and the control algorithm is used to tune the opening of the second pulsing valve (V2) during the opening cycle of the second pulsing valve (V2) based on the detected pressure of the buffer volume (180), device (100).

Description

Low vapor pressure precursor dosage control The present disclosure generally relates to the control of precursor dosage in a substrate processing apparatus. The present disclosure is not exclusive, but particularly relates to controlling the precursor dosage of low vapor pressure precursor pulses. This section illustrates useful background information without acknowledging that any technique described herein represents the latest technology. Precise precursor dosage control is critical in substrate processing. Poor dosage control reduces processing quality and increases resource usage. Low vapor pressure precursors present additional challenges in achieving and maintaining desired pressures and dosages across continuous reactant pulses. Therefore, improved means for precise dosage control of low vapor pressure precursors are required. The appended claims define the scope of protection. Any examples and technical descriptions of devices, products, and/or methods in the description and/or drawings that are not covered by the claims are presented not as embodiments of the invention, but as examples or background art useful for understanding the invention. According to a first exemplary aspect, a device is provided, and the device is, Processing chamber for processing substrates, Inert gas source system, A first inlet line connecting the inert gas source system to the processing chamber, (Precursor) source container for housing a low vapor pressure precursor, A second inlet line connecting an inert gas source system to a buffer volume including the head space of a source vessel, It includes a third inlet line connecting a source container to a first inlet line through a buffer volume and a first pulsing valve, wherein The device is configured to adjust the pressure in the buffer volume to a predetermined level during the purge phase of the process cycle. Advantageously, controlling continuous precursor pulses and pulse dosage can be improved. In certain embodiments, the first pulsing valve is a multi-leg (multi-way) pulsing valve. In certain embodiments, the first pulsing valve is a 3-leg (3-way) pulsing valve. In certain embodiments, the device includes a third inlet line that connects a source vessel through a buffer volume to a first inlet line through a first pulsing valve. In certain embodiments, the device is configured to adjust the pressure in the buffer volume to a predetermined level when the leg of the first pulsing valve downstream of the buffer volume is closed during the purge phase of the process cycle. In certain embodiments, the first inlet line is configured to provide a first inert gas flow to the processing chamber. In certain embodiments, the second inlet line is configured to provide a second inert gas flow to the buffer volume. In certain embodiments, the first inlet line is configured to provide a first inert gas flow to the processing chamber, and the second inlet line is configured to provide a second inert gas flow to the buffer volume. In certain embodiments, the first pulsing valve has a first open-close timing cycle configured to control the amount of precursor administered from the buffer volume to the first inlet line during the process cycle. Advantageously, the amount of precursor administered to the processing chamber can be improved. In certain embodiments, the device includes a second pulsing valve in the second inlet line. In certain embodiments, the second pulsing valve is configured to control the second inert gas flow into the buffer volume. In certain embodiments, the second pulsing valve is configured to control the second inert gas flow into the buffer volume during purging to adjust the pressure in the buffer volume to a predetermined level during purging. In certain embodiments, the device includes a second pulsing valve, and the second pulsing valve is configured to control the second inert gas flow into the buffer volume to enable the pressure in the buffer volume to be adjusted to a predetermined level during the purging phase of the process cycle. Advantageously, the pressure in the buffer volume can be precisely controlled. Additionally, variations in the precursor dosage of successive pulses can be minimized. In certain embodiments, the second pulsing valve has a second open-close timing cycle coordinated with the first open-close timing cycle of the first pulsing valve. Advantageously, pressure and process control of the device can be improved. In certain embodiments, the second pulsing valve is configured to be open during the pulse of the first pulsing valve. In certain embodiments, the second pulsing valve remains open until a predetermined pressure level in the buffer volume is achieved when entering the purge phase after the reactant pulse through the first pulsing valve. In certain embodiments, the device is configured to enter an idle phase in response to achieving a predetermined pressure level in the buffer volume during purging. In certain embodimen