KR-20260066061-A - CMP polishing solution, CMP polishing solution set and polishing method

Abstract

A polishing solution for CMP comprising abrasive particles, a nitrogen-containing compound, and water, wherein the abrasive particles comprise cerium-based particles, and the nitrogen-containing compound comprises: compound A1 having a condensed ring (a condensed ring in which a nitrogen atom has one aromatic five-membered ring), compound A2 having a quinoline ring and one hydroxyl group bonded to the quinoline ring, compound A3 having an aromatic ring and a hydroxyl group bonded to a nitrogen atom, or compound A4 having a nitrogen-containing aromatic ring bonded to at least one selected from the group consisting of a hydroxyl group and an amino group.

Inventors

• 구라타 야스시
• 구와타 아야카
• 이와노 도모히로
• 미즈타니 마코토
• 사토 카이
• 마에다 마사노리
• 구보타 시게키
• 사카구치 준야
• 구라타 유토
• 이노우에 게이스케

Assignees

• 가부시끼가이샤 레조낙

Dates

Publication Date

20260512

Application Date

20230913

Claims (17)

1. Contains abrasive particles, nitrogen-containing compounds, and water, The above-mentioned abrasive particles include cerium-based particles, The above nitrogen-containing compound includes compound A1 having a condensed ring, and A polishing liquid for CMP in which the above-mentioned condensed ring has an aromatic five-membered ring having one nitrogen atom.
2. In claim 1, A polishing solution for CMP in which the above compound A1 has an indole ring.
3. In claim 1, A polishing liquid for CMP, wherein at least one substituted alkyl group selected from the group consisting of a carboxyl group and a carboxylic acid group is bonded to the aromatic five-membered ring.
4. In claim 1, A polishing solution for CMP in which the above nitrogen-containing compound comprises 1H-indole-3-acetic acid.
5. In claim 1, A polishing solution for CMP in which the above nitrogen-containing compound comprises N-acetyl-DL-tryptophan.
6. Contains abrasive particles, nitrogen-containing compounds, and water, The above-mentioned abrasive particles include cerium-based particles, A polishing solution for CMP comprising the above nitrogen-containing compound, a quinoline ring, and a compound A2 having one hydroxyl group bonded to the quinoline ring.
7. Contains abrasive particles, nitrogen-containing compounds, and water, The above-mentioned abrasive particles include cerium-based particles, A polishing solution for CMP comprising the above nitrogen-containing compound, compound A3 having an aromatic ring and a hydroxyl group bonded to a nitrogen atom.
8. In claim 7, A polishing solution for CMP in which the above compound A3 has a benzene ring.
9. In claim 7, A polishing solution for CMP in which a hydroxyamide group is bonded to the above-mentioned aromatic ring.
10. Contains abrasive particles, nitrogen-containing compounds, and water, The above-mentioned abrasive particles include cerium-based particles, A polishing solution for CMP comprising the above nitrogen-containing compound A4 having a nitrogen-containing aromatic ring bonded to at least one selected from the group consisting of a hydroxyl group and an amino group.
11. In claim 10, A polishing solution for CMP in which the above compound A4 has a pyridine ring.
12. In claim 10, A polishing liquid for CMP, wherein at least one type selected from the group consisting of carboxyl groups and carboxylic acid groups is further bonded to the nitrogen-containing aromatic ring.
13. In any one of claims 1 to 12, A polishing solution for CMP in which the above-mentioned cerium-based particles contain cerium oxide.
14. In any one of claims 1 to 12, A polishing solution for CMP with a pH of 3.00 to 7.00.
15. A set of polishing liquids for CMP, wherein the components of the polishing liquid for CMP described in any one of claims 1 to 12 are divided and preserved into a first liquid and a second liquid, wherein the first liquid comprises the abrasive particles and water, and the second liquid comprises the nitrogen-containing compound and water.
16. A polishing method comprising a process of polishing a surface to be polished using a polishing liquid for CMP described in any one of claims 1 to 12.
17. In claim 16, A polishing method in which the surface to be polished comprises silicon oxide.

Description

CMP polishing solution, CMP polishing solution set and polishing method The present disclosure relates to a polishing solution for CMP (chemical mechanical polishing), a set of polishing solutions for CMP, a polishing method, etc. In the semiconductor manufacturing field, as the performance of ultra-LSI devices increases, it has become difficult to achieve both high integration and high speed through miniaturization technology that is an extension of conventional technology. Therefore, as semiconductor devices are miniaturized, technology for high integration in the vertical direction (i.e., technology for multilayering wiring) is being developed. CMP technology is one of the most critical technologies in the process of manufacturing devices with multilayered wiring. CMP technology is a technique for planarizing the surface of a substrate obtained by forming a thin film on a substrate via chemical vapor deposition (CVD), etc. For example, planarization treatment by CMP is indispensable to secure the depth of focus in lithography. If there are irregularities on the substrate surface, problems arise, such as the inability to focus during the photolithography process or the inability to sufficiently form fine wiring structures. Furthermore, in the device manufacturing process, CMP technology includes a process for forming a device isolation (inter-device separation; STI: Shallow Trench Isolation) region by polishing a plasma oxide film (BPSG, HDP- SiO2 , p-TEOS, etc.); and a process for forming an ILD film (an insulating film that electrically insulates metal components (wiring, etc.) within the same layer). It is also applied to processes such as flattening plugs (e.g., Al·Cu plugs) after embedding a film containing silicon oxide into metal wiring. CMP is typically performed using a device capable of supplying a polishing liquid onto a polishing pad. The surface of the gas is polished by supplying the polishing liquid between the surface of the gas and the polishing pad while pressing the gas against the polishing pad. As such, in CMP technology, the polishing liquid is one of the key technologies, and various polishing liquids have been developed to date in order to obtain high-performance polishing liquids (for example, see Patent Document 1 below). Among the processes to which the CMP technology described above is applied, particularly in the CMP process of ILD films, it is necessary to polish silicon oxide at a high polishing rate. For this reason, in the CMP process of ILD films, silica-based polishing solutions (polishing solutions using abrasive particles containing silica-based particles) having a high polishing rate are mainly used (see, for example, Patent Document 2 below). However, with silica-based polishing solutions, it tends to be difficult to control polishing scratches, which are the cause of defects. Furthermore, with the recent miniaturization of wiring, it is desirable to minimize polishing scratches in the CMP process of ILD films as well; however, unlike the CMP process of insulating films for device isolation regions, mirror-finish polishing is generally not performed. Therefore, the use of cerium-based polishing solutions (polishing solutions using abrasive particles containing cerium-based particles), which have fewer polishing scratches compared to silica-based polishing solutions, is being considered (see, for example, Patent Document 3 below). Figure 1 is a schematic cross-sectional view showing the process of polishing an ILD film. Hereinafter, embodiments of the present disclosure will be described in detail. In this specification, a numerical range indicated by "~" represents a range that includes the values listed before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and a range exceeding A. "A or less" in a numerical range means A and a range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in a given step may be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of said numerical range may be substituted with the values shown in the examples. "A or B" means that either A or B may be included, or both may be included. Unless otherwise specifically stated, the materials exemplified in this specification may be used as a single type or in combination of two or more types. The content of each component in the composition refers to the total amount of said multiple substances present in the composition, unless otherwise specifically stated, in cases where multiple substances corresponding to each component exist in the composition. The terms "layer" or "film" include, in addition to the structure formed on the entire surface when observed as a plan view, the structure formed on a part thereof. The term "process" includes not only indepe