KR-20260066116-A - semiconductor device

KR20260066116AKR 20260066116 AKR20260066116 AKR 20260066116AKR-20260066116-A

Abstract

A semiconductor device having a small area is provided. The semiconductor device comprises a first transistor, a second transistor, and a first insulating layer. The first transistor includes a first conductive layer, a first metal oxide layer, a gate insulating layer, and a first gate electrode. The second transistor includes a second conductive layer, a third conductive layer, a second metal oxide layer, a gate insulating layer, and a second gate electrode. The first insulating layer is located on the first conductive layer and the second conductive layer and has a first opening that reaches the first conductive layer. The first insulating layer and the third conductive layer have a second opening that reaches the second conductive layer. The first metal oxide layer includes a first region in contact with the upper surface of the first conductive layer, a second region in contact with the side surface of the first insulating layer, and a third region in contact with the upper surface of the first insulating layer. The third region is in contact with the second region. The second metal oxide layer is in contact with the upper surface of the second conductive layer, the side surface of the first insulating layer, and the side surface of the third conductive layer.

Inventors

시마 유키노리
도바시 마사요시
코에즈카 준이치
진쵸우 마사미

Assignees

가부시키가이샤 한도오따이 에네루기 켄큐쇼

Dates

Publication Date: 20260512
Application Date: 20240913
Priority Date: 20230922

Claims (7)

As a semiconductor device, It includes a first transistor, a second transistor, and a first insulating layer, and The first transistor comprises a first conductive layer, a first metal oxide layer, a gate insulating layer, and a first gate electrode, and The second transistor comprises a second conductive layer, a third conductive layer, a second metal oxide layer, the gate insulating layer, and a second gate electrode, and The first insulating layer is located on the first conductive layer and the second conductive layer, and The third conductive layer includes a region that overlaps with the second conductive layer via the first insulating layer, and The first insulating layer has a first opening reaching the first conductive layer, and The first insulating layer and the third conductive layer have a second opening reaching the second conductive layer, The first metal oxide layer comprises a first region in contact with the upper surface of the first conductive layer at the first opening, a second region in contact with the side surface of the first insulating layer at the first opening, and a third region in contact with the upper surface of the first insulating layer. The above third region is in contact with the above second region, and The second metal oxide layer comprises a region in contact with the upper surface of the second conductive layer at the second opening, a region in contact with the side of the first insulating layer at the second opening, and a region in contact with the side of the third conductive layer at the second opening. The gate insulating layer is located on the first metal oxide layer and the second metal oxide layer and is in contact with the first metal oxide layer and the second metal oxide layer, and The first gate electrode includes a region that overlaps with the first metal oxide layer at the first opening through the gate insulating layer, and A semiconductor device wherein the second gate electrode includes a region that overlaps with the second metal oxide layer through the gate insulating layer at the second opening.
In Article 1, The first insulating layer comprises a second insulating layer and a third insulating layer on the second insulating layer, and The second insulating layer above comprises silicon and oxygen, and A semiconductor device in which the third insulating layer comprises silicon, nitrogen, and hydrogen.
In Article 2, The first insulating layer includes a fourth insulating layer between the second insulating layer and the third insulating layer, and The above-mentioned fourth insulating layer comprises silicon and nitrogen, and A semiconductor device in which the third insulating layer comprises a region having a higher concentration of hydrogen than the fourth insulating layer.
In Article 2, The first insulating layer includes a fourth insulating layer between the second insulating layer and the third insulating layer, and The above-mentioned fourth insulating layer comprises one or both of aluminum and hafnium and oxygen, and A semiconductor device in which the third insulating layer comprises a region having a higher concentration of hydrogen than the fourth insulating layer.
In Article 3 or Article 4, The first insulating layer comprises a fifth insulating layer between the first conductive layer, the second conductive layer, and the second insulating layer, and A semiconductor device in which the above-mentioned fifth insulating layer comprises silicon and nitrogen.
In Article 5, The first insulating layer comprises a sixth insulating layer between the first conductive layer, the second conductive layer, and the fifth insulating layer, and A semiconductor device in which the sixth insulating layer comprises silicon, nitrogen, and hydrogen.
In Article 5, It includes a sixth insulating layer, The sixth insulating layer includes the lower surface of the first conductive layer, the lower surface of the second conductive layer, and a region in contact with the lower surface of the first insulating layer. A semiconductor device in which the sixth insulating layer comprises silicon, nitrogen, and hydrogen.

Description

semiconductor device One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the same. One embodiment of the present invention relates to a transistor and a method for manufacturing the same. One embodiment of the present invention relates to a display device including a semiconductor device. Furthermore, one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, capacitor devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input/output devices (e.g., touch panels), methods for driving the same, or methods for manufacturing the same. Furthermore, in this specification and others, the term "semiconductor device" refers to a device utilizing semiconductor characteristics, and includes circuits containing semiconductor elements (transistors, diodes, photodiodes, etc.) and devices containing such circuits. It also refers to devices in general that can function by utilizing semiconductor characteristics. For example, integrated circuits, chips containing integrated circuits, and electronic components housing chips in packages are examples of semiconductor devices. Additionally, memory devices, display devices, light-emitting devices, lighting devices, and electronic devices are themselves semiconductor devices, and each may include a semiconductor device. Semiconductor devices containing transistors are widely used in electronic devices. For example, in display devices, reducing the area occupied by transistors allows for a reduction in pixel size, thereby increasing resolution. Therefore, there is a demand for finer transistors. Devices requiring high-definition display devices are being actively developed, for example, for Virtual Reality (VR), Augmented Reality (AR), Substitutional Reality (SR), and Mixed Reality (MR). As display devices, light-emitting devices including organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs) are being developed. Patent Document 1 discloses a high-precision display device using an organic EL element. Figure 1 (A) is a top view showing an example of a semiconductor device. Figures 1 (B) and (C) are cross-sectional views showing an example of a semiconductor device. Figures 2 (A) to (D) are perspective views showing an example of a semiconductor device. Figures 3 (A) and (B) are cross-sectional views showing an example of a semiconductor device. FIG. 4 (A) is a top view showing an example of a semiconductor device. FIG. 4 (B) and (C) are cross-sectional views showing an example of a semiconductor device. Figures 5 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figures 6 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figure 7 is a cross-sectional view showing an example of a semiconductor device. Figures 8 (A) to (C) are cross-sectional views showing an example of a semiconductor device. Figures 9 (A) to (C) are cross-sectional views showing an example of a semiconductor device. Figures 10 (A) to (C) are cross-sectional views showing an example of a semiconductor device. Figures 11 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figures 12 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figure 13 (A) is a top view showing an example of a semiconductor device. Figures 13 (B) and (C) are cross-sectional views showing an example of a semiconductor device. Figures 14 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figures 15 (A) to (G) are cross-sectional views showing an example of a semiconductor device. Figures 16 (A) and (B) are cross-sectional views showing an example of a semiconductor device. Figures 17 (A) to (E) are circuit diagrams showing examples of semiconductor devices. Figure 18 (A) is a top view showing an example of a semiconductor device. Figure 18 (B) is a cross-sectional view showing an example of a semiconductor device. Figure 19 (A) is a top view showing an example of a semiconductor device. Figure 19 (B) is a cross-sectional view showing an example of a semiconductor device. Figure 20 (A) is a top view showing an example of a semiconductor device. Figure 20 (B) is a cross-sectional view showing an example of a semiconductor device. Figure 21 (A) is a top view showing an example of a semiconductor device. Figures 21 (B) and (C) are cross-sectional views showing an example of a semiconductor device. Figure 22 (A) is a top view showing an example of a semiconductor device. Figure 22 (B) is a cross-sectional view showing an example of a semiconductor device. Figures 23 (A) to (E) are cross-sectional views showing an example of a method for manufacturing a semiconductor device. Figures 24 (A) to (D) are