Search

KR-20260066121-A - Resist composition, method for manufacturing a resist composition, substrate processing apparatus and substrate processing method

KR20260066121AKR 20260066121 AKR20260066121 AKR 20260066121AKR-20260066121-A

Abstract

The resist composition contains at least one compound represented by the following general formulas (1), (2) and (3).

Inventors

  • 야자키, 고헤이
  • 도바시, 가즈야
  • 나가하라, 세이지

Assignees

  • 도쿄엘렉트론가부시키가이샤

Dates

Publication Date
20260512
Application Date
20240918
Priority Date
20230929

Claims (20)

  1. A resist composition containing at least one compound represented by the following general formulas (1), (2) and (3). [In general formula (1), R1 to R4 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X1 and Y1 are each independently selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms. [In general formula (2), R 5 to R 9 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X 2 is any one selected from the group consisting of nitrogen atoms, phosphorus atoms, arsenic atoms, and antimony atoms, and Y₂ is any one selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms. [In general formula (3), R 10 to R 15 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X 3 is any one selected from the group consisting of carbon atoms, silicon atoms, germanium atoms, and tin atoms, and Y₃ is any one selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms.
  2. A resist composition containing a compound represented by the following general formula (4). [In general formula (4), R1 to R4 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X1 and Y1 are each independently selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms.
  3. A resist composition containing a compound represented by the following general formula (5). [In general formula (5), R 5 to R 9 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X 2 is any one selected from the group consisting of nitrogen atoms, phosphorus atoms, arsenic atoms, and antimony atoms, and Y₂ is any one selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms.
  4. A resist composition containing a compound represented by the following general formula (6). [In general formula (6), R 5 to R 9 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and Y₂ is any one selected from the group consisting of oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms.
  5. A resist composition containing a compound represented by the following general formula (7). [In general formula (7), R1 to R3 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X 1 is an oxygen atom or a sulfur atom.
  6. A resist composition containing a compound represented by the following general formula (8). [In general formula (8), R 5 to R 8 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X₂ is any one selected from the group consisting of nitrogen atoms, phosphorus atoms, arsenic atoms, and antimony atoms.
  7. A resist composition containing a compound represented by the following general formula (9). [In general formula (9), R 5 to R 8 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent.]
  8. A resist composition containing a compound represented by the following general formula (10). [In general formula (10), R 10 to R 14 are each independently selected from the group consisting of: a straight-chain, branched, or cyclic alkyl group having 1 to 12 carbon atoms that may include a substituent; a straight-chain, branched, or cyclic alkenyl group having 1 to 12 carbon atoms that may include a substituent; an aryl group having 6 to 14 carbon atoms that may include a substituent; and a heteroaryl group having 4 to 12 carbon atoms that may include a substituent; and X3 is any one selected from the group consisting of carbon atoms, silicon atoms, germanium atoms, and tin atoms.
  9. In any one of paragraphs 1 through 8, the resist substrate and, At least one compound represented by the above general formulas (1) to (10), and A resist composition containing an acid-generating agent that generates acid upon exposure.
  10. A resist composition according to claim 9, wherein the compound is bonded to the acid generating agent.
  11. A resist composition according to claim 9, wherein the compound is bonded to the resist substrate.
  12. In claim 9, the acid generating agent binds to the resist substrate, and A resist composition in which the above compound is bonded to the above acid generating agent.
  13. In any one of paragraphs 1 through 8, the resist substrate and, At least one compound represented by the above general formulas (1) to (10), and An acid generator that generates acid by exposure, and A resist composition containing a ?? agent having basicity against acid.
  14. A resist composition according to claim 13, wherein the above compound is bonded to the above ?? site.
  15. A resist composition according to claim 9, wherein the compound is ionically bonded to the resist substrate.
  16. A method for manufacturing a resist composition as described in any one of claims 1 to 8, and A method for preparing a resist composition by mixing at least one compound represented by the above general formulas (1) to (10) into a resist substrate.
  17. A method for preparing a resist composition according to claim 16, wherein ion exchange of the resist substrate and the compound is performed.
  18. A darkroom for positioning the circuit board, and, An exposure unit provided within the above dark room for exposing a resist composition described in any one of claims 1 to 8, having a film formed on the substrate, and A substrate processing apparatus comprising a developing unit provided within the above-mentioned darkroom for developing the above-mentioned resist composition exposed to light.
  19. In claim 18, a nozzle for dispensing the resist composition, and A first flow path in which the resist composition flows, in communication with the above nozzle, and A substrate processing apparatus comprising a second flow path through which an alkaline solution flows, connected to the first flow path above.
  20. A film forming process for forming a resist film on a substrate comprising a resist composition described in any one of claims 1 to 8, and A pattern exposure process for irradiating the above resist film with radiation having a wavelength of 300 nm or less through a mask, and A batch exposure process for irradiating the resist film with radiation having a wavelength exceeding 300 nm after the above pattern exposure process, and A bake process for heating the resist film after the above batch exposure process, and A substrate processing method comprising a process of contacting the resist film after the above baking process with a developer.

Description

Resist composition, method for manufacturing a resist composition, substrate processing apparatus and substrate processing method The present disclosure relates to a resist composition, a method for manufacturing a resist composition, a substrate processing apparatus, and a substrate processing method. The photosensitive chemical amplification resist (PSCAR) for EUV lithography comprises a photogenerator that generates acid upon absorbing EUV light, and a photogenerator that is activated by the acid and changes to absorb light. In the PSCAR process, the photogenerator is exposed to EUV light, and the photogenerator, activated by the generated acid, absorbs the EUV light, causing additional acid to be generated from the photogenerator through energy transfer, etc. Patent Document 1 discloses a technology that uses a compound that changes from an acetal structure to a ketone structure by external stimulation (light, acid, etc.) as a photosensitizer precursor used in the PSCAR process for EUV lithography. Figure 1 is a graph showing the absorption wavelength of a photosensitizer (photosensitizer precursor) used in a resist composition before activation. Figure 2 is a graph showing the absorption wavelength after activation of the photosensitizer in Figure 1. Figure 3 is a drawing illustrating the composition of a resist composition. Figure 4 is a diagram illustrating the composition of a resist composition (a composition in which a photosensitive agent is bonded to an acid generator (PAG). Figure 5 is a diagram illustrating the reaction in which the resist composition of Figure 4 is activated. FIG. 6 is a diagram illustrating the composition of a resist composition (a composition in which a photosensitive agent is bonded to a resist substrate). Figure 7 is a drawing illustrating an example of the resist composition of Figure 6. FIG. 8 is a drawing illustrating an example of the resist composition of FIG. 6. FIG. 9 is a drawing illustrating an example of the resist composition of FIG. 6. Figure 10 is a diagram illustrating the reaction in which the resist composition of Figure 7 is activated. Figure 11 is a diagram illustrating the reaction in which the resist composition of Figure 8 is activated. FIG. 12 is a drawing illustrating a specific example of the resist composition of FIG. 8. FIG. 13 is a drawing illustrating the composition of a resist composition (a composition in which an acid generator (PAG) is bonded to the resist substrate and a photosensitizer is bonded to the acid generator (PAG)). FIG. 14 is a diagram illustrating the composition of a resist composition (a composition in which a photosensitive agent is bonded to the diffuser (PDB). FIG. 15 is a diagram illustrating the composition of a resist composition (a composition in which a photosensitive agent is ionically bonded to a resist substrate). FIG. 16 is a diagram illustrating the composition of a resist composition (a composition in which a photosensitive agent is ionically bonded to a resist substrate). FIG. 17a is a diagram illustrating the process of a conventional photosensitizer chemical amplification resist. FIG. 17b is a diagram illustrating the process of a conventional photosensitizer chemical amplification resist. FIG. 17c is a diagram illustrating the process of a conventional photosensitizer chemical amplification resist. FIG. 18a is a diagram illustrating the process of a photosensitizer chemical amplification resist using the resist composition of the present disclosure. FIG. 18b is a diagram illustrating the process of a photosensitizer chemical amplification resist using the resist composition of the present disclosure. FIG. 18c is a diagram illustrating the process of a photosensitizer chemical amplification resist using the resist composition of the present disclosure. FIG. 19 is a drawing illustrating an embodiment of manufacturing a resist composition of the present disclosure. FIG. 20 is a drawing illustrating an embodiment of manufacturing a resist composition of the present disclosure. FIG. 21 is a drawing illustrating an embodiment of manufacturing a resist composition of the present disclosure. FIG. 22 is a drawing illustrating a substrate processing apparatus using the resist composition of the present disclosure. FIG. 23 is a drawing illustrating a substrate processing apparatus using the resist composition of the present disclosure. FIG. 24 is a drawing illustrating a substrate processing apparatus using the resist composition of the present disclosure. FIG. 25 is a drawing illustrating a substrate processing apparatus using the resist composition of the present disclosure. Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, parts common to each drawing may be denoted by the same or corresponding reference numerals, and descriptions may be omitted. <Resist Composition> The resist composition of the present disclosure contains at least one compound repre