KR-20260066136-A - Compound, photosensitive surface treatment agent, method for manufacturing a laminate, and method for manufacturing a transistor
Abstract
A compound represented by Formula (1). [In Formula (1), R is an alkyl group having 1 to 5 carbon atoms, X is a halogen element or an alkoxy group, n1 is an integer from 0 to 5, and n2 is an integer greater than or equal to 1.] [Chemical Formula 1]
Inventors
- 가와카미 유스케
Assignees
- 가부시키가이샤 니콘
Dates
- Publication Date
- 20260512
- Application Date
- 20230927
Claims (4)
- A compound represented by the following formula (1). [In Formula (1), R is an alkyl group having 1 to 5 carbon atoms, X is a halogen element or an alkoxy group, n1 is an integer from 0 to 5, and n2 is an integer greater than or equal to 1.]
- A photosensitive surface treatment agent comprising the compound described in claim 1.
- A process of forming a photosensitive primer layer comprising a photosensitive surface treatment agent described in claim 2 on a substrate, and A process of forming metal wiring on the above photosensitive primer layer, and A method for manufacturing a laminate comprising a process of forming an organic insulating layer on the above photosensitive primer layer and the above metal wiring.
- A method for manufacturing a transistor, comprising a process of forming one or more electrodes among a source electrode, a drain electrode, or a gate electrode by the method for manufacturing a laminate described in claim 3.
Description
Compound, photosensitive surface treatment agent, method for manufacturing a laminate, and method for manufacturing a transistor The present invention relates to a compound, a photosensitive surface treatment agent, a method for manufacturing a laminate, and a method for manufacturing a transistor. Recently, in the manufacture of microdevices such as semiconductor devices, integrated circuits, and organic EL display devices, a method of manufacturing microdevices by stacking a metal material, an insulating layer, and a semiconductor layer on a substrate has been proposed. In this method, the obtained microdevice has a structure in which a metal material and a semiconductor layer are stacked on a substrate with an insulating layer interposed therebetween. In the obtained microdevice, from the perspective of obtaining excellent electrical characteristics and high reliability, it is particularly required that the substrate and the insulating layer remain in close contact without delamination. A method of modifying the surface of a substrate is known as a technique for adhering a substrate to a material laminated on the substrate. Methods for modifying the substrate surface include pretreatment such as UV ozone cleaning or plasma treatment, and applying a modifying agent such as a silane coupling agent or hexamethyldisilazane. For example, Patent Document 1 discloses oxygen plasma treatment, UV ozone treatment, UV irradiation, etc. as a method for modifying a surface. The first embodiment of the present invention is a compound represented by the following formula (1). [Chemical Formula 1] [In Formula (1), R is an alkyl group having 1 to 5 carbon atoms, X is a halogen element or an alkoxy group, n1 is an integer from 0 to 5, and n2 is an integer greater than or equal to 1.] A second aspect of the present invention is a photosensitive surface treatment agent comprising a compound represented by the formula (1) above. A third aspect of the present invention is a method for manufacturing a laminate comprising: a process of forming a photosensitive primer layer containing the photosensitive surface treatment agent of the second aspect on a substrate; a process of forming a metal wiring on the photosensitive primer layer; and a process of forming an organic insulating layer on the photosensitive primer layer and the metal wiring. A fourth aspect of the present invention is a method for manufacturing a transistor, comprising a process of forming one or more electrodes among a source electrode, a drain electrode, or a gate electrode by the method for manufacturing a laminate of the third aspect. The present invention aims to provide a compound capable of improving the adhesion between a substrate and an insulating layer laminated on the substrate, a photosensitive surface treatment agent, a method for manufacturing a laminate, and a method for manufacturing a transistor. FIG. 1 is a diagram showing a schematic process of the method for manufacturing a laminate of the present embodiment. Figure 2 is a diagram showing an example of a schematic process of a method for manufacturing a transistor. FIG. 3 is a schematic cross-sectional view illustrating the bonded state of the laminate of the present embodiment. <Compounds> One embodiment of the present invention is a compound represented by the following formula (1). [Chemical Formula 2] [In Formula (1), R is an alkyl group having 1 to 5 carbon atoms, X is a halogen atom or an alkoxy group, n1 is an integer from 0 to 5, and n2 is an integer greater than or equal to 1.] The compound represented by formula (1) has a cinnamate group (cinnamic acid group) as a photodimerization group. The carbon-carbon double bond in this cinnamate group can form a four-membered ring with the carbon-carbon double bond of another cinnamate group upon light irradiation, thereby allowing for crosslinking. The compound represented by Equation (1) has absorption at the i-line (wavelength 365 nm) by having a cinnamate group. For this reason, the compound represented by Equation (1) is a material that can efficiently form a cross-linked structure after a photoreaction at the i-line. By using the compound represented by Equation (1) as a material for the photosensitive primer described later to manufacture a laminate or transistor, the adhesion between the substrate and the insulating layer can be increased. (R) In formula (1), R is an alkyl group having 1 to 5 carbon atoms, and R can be a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, or a tert-butyl group, among which a methyl group or an ethyl group is preferred, and a methyl group is more preferred. (n1) In formula (1), n1 is an integer from 0 to 5, preferably 0 to 3, more preferably 0 to 2, and even more preferably 0 or 1. (X) In formula (1), the halogen atom represented by X can be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. It is preferable that X be an alkoxy group. Examples of alkox