KR-20260066191-A - Tabernacle Method and Tabernacle Device

Abstract

The film deposition method includes a first film deposition process and a second film deposition process. In the first film deposition process, a polymer film is formed on the surface of a substrate in the chamber by supplying a gas of a first monomer and a second monomer into the chamber. In the second film deposition process, a polymer film is further formed on the polymer film formed in the first film deposition process at a higher deposition rate than in the first film deposition process by supplying the first monomer and the second monomer into the chamber.

Inventors

• 노자와 슈지
• 야마구치 다츠야

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260512

Application Date

20241025

Priority Date

20231108

Claims (14)

1. A first film formation process for forming a polymer film on the surface of a substrate within a chamber by supplying gases of a first monomer and a second monomer into the chamber, and A second film deposition process for further forming a polymer film on the polymer film formed in the first film deposition process at a higher deposition rate than the first film deposition process by supplying the first monomer and the second monomer into the chamber. The method of executing the tabernacle.
2. In Article 1, A film formation method in which the pressure inside the chamber in the first film formation process is lower than the pressure inside the chamber in the second film formation process.
3. In Article 1 or Article 2, A film deposition method in which the temperature of the substrate in the first film deposition process is higher than the temperature of the substrate in the second film deposition process.
4. In Article 1 or Article 2, A film formation method in which the gas flow rate of the first monomer and the second monomer in the first film formation process is less than the gas flow rate of the first monomer and the second monomer in the second film formation process.
5. In Article 1 or Article 2, A film formation method in which the concentration of the gas of the first monomer and the second monomer supplied into the chamber in the first film formation process is lower than the concentration of the gas of the first monomer and the second monomer supplied into the chamber in the second film formation process.
6. In Article 1 or Article 2, A film deposition method in which the deposition rate in the first film deposition process is 5 nm/min or less.
7. In Article 1 or Article 2, A film formation method in which at least a portion of the surface of the substrate is silicon, silicon nitride, or silicon oxide.
8. In Article 1 or Article 2, A film formation method in which a film of the polymer with a thickness of 0.6 nm to 5 nm is formed in the first film formation process above.
9. In Article 1 or Article 2, The first monomer above is an isocyanate, and The second monomer mentioned above is an amine, and A method for forming a membrane in which the above polymer membrane includes urea bonds.
10. In Article 1 or Article 2, The first monomer above is a carboxylic acid anhydride, and The second monomer mentioned above is an amine, and A method for forming a membrane in which the membrane of the above polymer includes imide bonds.
11. In Article 1 or Article 2, The first monomer above is an epoxide, and The second monomer mentioned above is an amine, and A method for forming a film in which the film of the above polymer contains 2-aminoethanol bonds.
12. In Article 1 or Article 2, The first monomer above is an isocyanate, and The second monomer mentioned above is an alcohol, and A method for forming a film in which the above polymer film includes urethane bonds.
13. In Article 1 or Article 2, The first monomer above is an acyl halide, and The second monomer mentioned above is an amine, and A method for forming a film in which the film of the above polymer contains amide bonds.
14. chamber and, A stage provided within the above chamber and on which a substrate is placed, and A gas supply unit that supplies gas of the first monomer and the second monomer into the chamber, and control unit Equipped with, The above control unit is, A first film formation process of supplying gases of the first monomer and the second monomer into the chamber by controlling the gas supply unit and forming a polymer film on the surface of the substrate within the chamber, and A second film deposition process for further forming a polymer film on the polymer film formed in the first film deposition process at a higher deposition rate than the first film deposition process by controlling the gas supply unit to supply the gas of the first monomer and the second monomer into the chamber. Tabernacle device that executes

Description

Tabernacle Method and Tabernacle Device Various aspects and embodiments of the present disclosure relate to a film formation method and a film formation apparatus. For example, the following patent document 1 discloses: “A case in which a plurality of raw materials used to form a film on a workpiece (W) are two types of raw materials, for example, raw material A as a first raw material and raw material B as a second raw material. For example, when forming a polyurea film on a workpiece (W), raw material A and raw material B are, for example, diisocyanate and diamine. In a film forming apparatus (1), a polyurea film is formed on the surface of a workpiece (W) by depositing and polymerizing diisocyanate and diamine on the surface of the workpiece (W).” FIG. 1 is a schematic cross-sectional view showing an example of a film forming device in one embodiment of the present disclosure. Figure 2 is a figure showing an example of the relationship between the thickness and uniformity of a polymer film. Figure 3 is a figure showing an example of the relationship between the thickness and uniformity of a polymer film. Figure 4 is a figure showing an example of the relationship between the thickness and uniformity of a polymer film. Figure 5a is a schematic diagram showing an example of the process of forming a polymer film. Figure 5b is a schematic diagram showing an example of the process of forming a polymer film. Figure 5c is a schematic diagram showing an example of the process of forming a polymer film. Figure 5d is a schematic diagram showing an example of the process of forming a polymer film. Figure 6 is a figure showing an example of uniformity when the deposition rate is changed. Figure 7 is a figure showing an example of the relationship between film thickness and uniformity in comparative examples and embodiments. FIG. 8 is a figure showing an example of the relationship between film thickness and uniformity in comparative examples and embodiments. Figure 9 is a flowchart showing an example of the tabernacle method. Figure 10 is a figure showing an example of the relationship between the film thickness and deposition rate of a polymer with respect to processing time. Figure 11 is a figure showing an example of a film formed on a surface of different wettability. Figure 12 is a figure showing an example of a film formed on a surface of different wettability. Figure 13 is a figure showing an example of a film formed on a surface of different wettability. Figure 14a is a figure showing an example of the process of forming a membrane on a structure having a surface of different wettability. FIG. 14b is a figure showing an example of the process of forming a tabernacle on a structure having a surface of different wettability. FIG. 14c is a figure showing an example of the process of forming a tabernacle on a structure having a surface of different wettability. Figure 15a is a figure showing an example of the process of forming a membrane on a structure having a surface of different wettability. FIG. 15b is a figure showing an example of the process of forming a tabernacle on a structure having a surface of different wettability. FIG. 15c is a figure showing an example of the process of forming a tabernacle on a structure having a surface of different wettability. FIG. 15d is a figure showing an example of the process of forming a membrane on a structure having a surface of different wettability. Below, embodiments of the disclosed film formation method and film formation apparatus will be described in detail with reference to the drawings. Furthermore, the disclosed film formation method and film formation apparatus are not limited by the following embodiments. However, when forming a polymer film on a substrate, if there is a deviation in the thickness of the polymer film, the non-uniformity of the characteristics of the semiconductor device processed using the polymer film may increase. Therefore, it is important to improve the uniformity of the thickness of the polymer film formed on the substrate. Therefore, the present disclosure provides a technique that can improve the uniformity of the thickness of a polymer film formed on a substrate. [Composition of the Tabernacle Device (10)] FIG. 1 is a schematic cross-sectional view showing an example of a film deposition device (10) in one embodiment of the present disclosure. The film deposition device (10) has a chamber (11), an exhaust mechanism (12), a gas supply unit (13), a shower head (16), a stage (17), and a control unit (20). In this embodiment, the film deposition device (10) is, for example, a CVD (Chemical Vapor Deposition) device. The exhaust mechanism (12) has a vacuum pump for exhausting gas inside the chamber (11) and a pressure regulating valve for adjusting the pressure inside the chamber (11). The inside of the chamber (11) is controlled to a vacuum atmosphere of a predetermined pressure by the exhaust mechanism (12). A gas supply unit (13) tha