KR-20260066195-A - Copper alloy plate, electronic components and method of manufacturing copper alloy plate

Abstract

The present invention provides a copper alloy plate having excellent heat resistance and high hardness even after annealing, an electronic component, and a method for manufacturing a copper alloy plate. The copper alloy plate contains 1.5 to 4.6 mass% of Ni, 0.10 to 0.80 mass% of Co, and 0.10 to 1.30 mass% of Si, with the remainder being Cu and unavoidable impurities, and the copper alloy plate has a Vickers hardness of 250 HV or higher after annealing the copper alloy plate at 450°C for 5 minutes.

Inventors

• 도노무라 히데츠구
• 마츠모토 소시
• 츠카세 다이키

Assignees

• 제이엑스금속주식회사

Dates

Publication Date

20260512

Application Date

20240830

Priority Date

20231207

Claims (16)

1. A copper alloy plate containing 1.50 to 4.60 mass% Ni, 0.10 to 0.80 mass% Co, and 0.10 to 1.30 mass% Si, with the remainder being Cu and unavoidable impurities, and having a Vickers hardness of 250 HV or higher after annealing the copper alloy plate at 450°C for 5 minutes.
2. In paragraph 1, A copper alloy plate further containing 0.01 to 2.00 mass% in total of one or more elements selected from the group consisting of Mg, Fe, P, Cr, Ag, Zn, Sn, Pb, Zr, Al, As, Se, Te, Sb, Bi, Au, Ti, Nb, V, Ta, W, Mo, and Mn.
3. In paragraph 1, A copper alloy plate further containing 0.01 to 0.50 mass% of Cr.
4. In paragraph 1, Copper alloy plate containing 0.20 to 0.50 mass% of Co.
5. In paragraph 1, Copper alloy plate containing 1.60 mass% or more of Ni and Co in total.
6. In paragraph 1, Copper alloy plate containing 2.28 mass% or more of Ni and Co in total.
7. In paragraph 1, Copper alloy plate containing 4.50 mass% or less of Ni and Co in total.
8. In paragraph 1, A copper alloy plate having a Vickers hardness of 262 HV or higher.
9. In paragraph 1, A copper alloy plate having a Vickers hardness of 350 HV or less.
10. In paragraph 1, A copper alloy plate having a tensile strength of 870 MPa or more in a direction parallel to the rolling direction.
11. In paragraph 1, A copper alloy plate having a tensile strength of 930 MPa or more in a direction parallel to the rolling direction.
12. In paragraph 1, Copper alloy plate with a conductivity of 35.0% IACS or higher.
13. In paragraph 1, Copper alloy plate with a conductivity of 40.2% IACS or higher.
14. An electronic component having a copper alloy plate as described in any one of claims 1 to 13.
15. The process comprises, in this order, a hot rolling process of a copper alloy ingot containing 1.50 to 4.60 mass% Ni, 0.10 to 0.80 mass% Co, and 0.10 to 1.30 mass% Si, with the remainder being Cu and unavoidable impurities; a solution treatment process of the obtained copper alloy intermediate; an aging treatment process of the copper alloy intermediate; a finish cold rolling process of the copper alloy intermediate; and a stress relief annealing process of the copper alloy intermediate. For the tensile strength A (MPa), 0.2% yield strength B (MPa), and conductivity C (% IACS) of the copper alloy intermediate after the solution treatment process and before the aging treatment process, the following relationship (1): X=(A×B)/C … (1) A method for manufacturing a copper alloy plate, comprising manufacturing the copper alloy intermediate such that the value of X, expressed as , is 582 or higher.
16. In paragraph 15, A method for manufacturing a copper alloy plate, comprising a process of annealing the copper alloy plate after the above stress relief annealing process at 300°C or higher for 1 second or more.

Description

Copper alloy plate, electronic components and method of manufacturing copper alloy plate The present invention relates to a copper alloy plate, an electronic component, and a method for manufacturing a copper alloy plate. Colson alloy is an alloy in which intermetallic compounds such as Ni-Si, Co-Si, and Ni-Co-Si are precipitated in a Cu matrix. Because Colson alloy possesses both high strength and high conductivity, it is used in electronic components. For example, it can be used as a lead frame in a semiconductor package to support and fix semiconductor devices and form internal wiring (see, for example, Patent Document 1). Figure 1 is a graph showing the relationship between X, expressed by equation (1): X=(A×B)/C, and the hardness HV of the copper alloy plate after annealing at 450°C for 5 minutes, using tensile strength (A), 0.2% yield strength (B), and electrical conductivity (C) for an intermediate of a copper alloy plate after solution treatment and before aging treatment. Embodiments of the present disclosure will be described in detail below, but the present invention is not limited to the following embodiments. (Copper alloy plate) The copper alloy plate according to the present embodiment is a copper alloy plate containing 1.50 to 4.60 mass% of Ni, 0.10 to 0.80 mass% of Co, and 0.10 to 1.30 mass% of Si, with the remainder being Cu and unavoidable impurities. That is, the copper alloy plate according to the present embodiment is a Cu-Ni-Co-Si alloy plate. (Ni, Co, Si content) Ni, Co, and Si can form precipitated particles of Cu-Ni-Co-Si intermetallic compounds by performing appropriate heat treatment, thereby improving the conductivity, strength, and heat resistance of the copper alloy. As the amount of Ni added increases, strength increases, but conductivity tends to decrease. If the Ni concentration is less than 1.50 mass%, the desired strength is not obtained. The Ni concentration is preferably 2.00 mass% or higher, more preferably 2.30 mass% or higher, even more preferably 3.00 mass% or higher, and even more preferably 3.50 mass% or higher. On the other hand, if the Ni concentration exceeds 4.60 mass%, the desired conductivity is not obtained. The Ni concentration is preferably 4.50 mass% or lower, more preferably 4.30 mass% or lower, even more preferably 4.00 mass% or lower, and even more preferably 3.70 mass% or lower. If the Si concentration is less than 0.10 mass%, the desired strength is not obtained. The Si concentration is preferably 0.30 mass% or higher, more preferably 0.50 mass% or higher, even more preferably 0.70 mass% or higher, and even more preferably 0.80 mass% or higher. On the other hand, if the Si concentration exceeds 1.30 mass%, the desired conductivity is not obtained. The Si concentration is preferably 1.20 mass% or lower, more preferably 1.10 mass% or lower, even more preferably 1.00 mass% or lower, and even more preferably 0.90 mass% or lower. By adding an appropriate amount of Co, along with improving conductivity and strength, it is possible to suppress the decrease in heat resistance of the copper alloy plate caused by short-time annealing when reducing residual stress after press processing, after the copper alloy plate according to the present embodiment is press-processed into a desired electronic component such as a lead frame. In order to obtain a copper alloy plate that combines high conductivity, high strength, and the effect of improving heat resistance against short-time annealing after processing, the concentration of Co is set to 0.10 mass% or more. The concentration of Co is preferably 0.15 to 0.80 mass%, more preferably 0.15 to 0.70 mass%, even more preferably 0.20 to 0.50 mass%, and even more preferably 0.20 to 0.40 mass%. (Ni+Co) If the content of Ni+Co is too low, the desired strength, conductivity, and heat resistance to short-time annealing after heat treatment are not significantly improved, whereas if the amount of Ni+Co added is too high, processability deteriorates. The copper alloy plate according to the present embodiment preferably contains 1.60 mass% or more of Ni and Co in total, more preferably 2.28 mass% or more, even more preferably 3.00 mass% or more, and even more preferably 3.50 mass% or more. Meanwhile, the copper alloy plate according to the present embodiment preferably contains 4.50 mass% or less of Ni and Co in total, more preferably 4.30 mass% or less, and even more preferably 4.00 mass% or less. In addition, the ratio of Co to Ni is preferably 0.05 to 0.10, more preferably 0.05 to 0.09, and even more preferably 0.05 to 0.08. ((Ni+Co)/Si mass ratio) Ni-Co-Si precipitates formed from Ni, Co, and Si are considered to be intermetallic compounds primarily composed of (Ni+Co)Si. However, it cannot be said that all of the Ni, Co, and Si in the copper alloy plate become precipitates due to the aging treatment during the manufacturing process of the copper alloy plate, and some may exist in a solid solution state within the Cu matrix.