KR-20260066217-A - Composition for stripping a photoresist And Method of stripping a photoresist using thereof

KR20260066217AKR 20260066217 AKR20260066217 AKR 20260066217AKR-20260066217-A

Abstract

The present invention can provide a photoresist stripping solution composition comprising quaternary ammonium hydroxide, an alcohol-based polar solvent, an amine having a hydroxyl group, and a glycol ether compound. The present invention can provide a photoresist stripping method comprising the step of etching a photoresist pattern formed on a substrate including metal wiring using a mask, and then stripping it with the photoresist stripping solution composition.

Inventors

한영규
유동우
박진철

Assignees

주식회사 한화

Dates

Publication Date: 20260512
Application Date: 20241104

Claims (14)

Quaternary ammonium hydroxide, Alcohol-based polar solvents, An amine having a hydroxyl group, and A photoresist stripping solution composition comprising a glycol ether compound.
In paragraph 1, A photoresist stripping solution composition comprising, based on the total weight of the photoresist stripping solution composition, an amount of 10% to 40% by weight of the quaternary ammonium hydroxide, 0.5% to 25% by weight of the alcohol-based polar solvent, 10% to 40% by weight of the amine having a hydroxyl group, and 1% to 25% by weight of the glycol ether compound.
In paragraph 1, A photoresist stripping solution composition containing water.
In paragraph 1, A photoresist stripping solution composition that does not contain a corrosion inhibitor.
In paragraph 1, A photoresist stripping solution composition wherein the above-mentioned quaternary ammonium hydroxide is one or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, choline hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, and monomethyltris(2-hydroxyethyl)ammonium hydroxide.
In paragraph 1, A photoresist stripping solution composition wherein the amine having the hydroxyl group is one or more selected from the group consisting of monoethanolamine (MEA), 1-aminoisopropanol (AIP), 2-amino-1-propanol, N-methylaminoethanol (N-MAE), 3-amino-1-propanol, 4-amino-1-butanol, 2-(2-aminoethoxy)-1-ethanol (AEE), 2-(2-aminoethylamino)-1-ethanol, diethanolamine (DEA), and triethanolamine (TEA).
In paragraph 6, A photoresist stripping solution composition having a molecular weight of amine having the above-mentioned hydroxyl group of 70 g/mol or less.
In paragraph 1, A photoresist stripping solution composition in which the above-mentioned alcohol-based polar solvent is one or more selected from the group consisting of methanol, ethanol, propanol, butanol, isopropyl alcohol, isobutanol, ethylene glycol, and propylene glycol.
In paragraph 8, A photoresist stripping solution composition having an octanol/water partition coefficient (Log P) of the above alcohol-based polar solvent calculated by [Mathematical Formula 1] below of -0.5 to +0.5. [Mathematical Formula 1] Kow = Co/Cw (Co: concentration of solute in octanol, Cw: concentration of solute in water) Log P(distribution coefficient) = Log(Kow)
In paragraph 1, A photoresist stripping solution composition in which the glycol ether compound is one or more selected from the group consisting of diethylene glycol monomethyl ether (methyl carbitol, MDG), diethylene glycol monoethyl ether (ethyl carbitol, EDG), diethylene glycol monobutyl ether (butyl carbitol, BDG), dipropylene glycol monomethyl ether (DPM), and dipropylene glycol monoethyl ether (DPE).
In paragraph 1, The above photoresist stripping solution composition is a negative type in which the light-blocking area among the exposure area and the light-blocking area dissolves in the developer, or a positive type in which the exposure area among the exposure area and the light-blocking area dissolves in the developer.
A method for stripping a photoresist, comprising the step of etching a photoresist pattern formed on a substrate including metal wiring using a mask, and then stripping it with a photoresist stripping solution composition described in any one of claims 1 to 11.
In Paragraph 12, A photoresist stripping method in which the metal wiring is one or more selected from the group consisting of copper, aluminum, titanium, molybdenum, indium, tin, nickel, and iron.
In Paragraph 12, A photoresist peeling method in which the above peeling method is a dip method or a spray method.

Description

Composition for stripping a photoresist and Method of stripping a photoresist using thereof The present invention relates to a photoresist stripping solution composition used in a photoresist stripping process during semiconductor and display manufacturing processes, and a stripping method using the same. More specifically, the invention relates to a photoresist stripping solution composition and a stripping method using the same, which includes a quaternary ammonium salt compound as an essential component and an alcohol-based polar solvent as a solvent, thereby removing a large amount of positive and negative photoresist in a short period of time and suppressing corrosion of a metal multilayer film to minimize damage. Recently, the semiconductor and display industries have been focusing on developing fabrication technologies for ultra-fine patterns and high-layer structures to achieve high resolution and enhance functionality. Photolithography processes are utilized in these technological developments to enable precise pattern transfer, making the use of photoresist stripping solution compositions with efficient stripping performance essential. Consequently, there is a steadily increasing need for general-purpose stripping solution compositions capable of removing modified positive or negative photoresists ranging in thickness from several micrometers to tens of micrometers while simultaneously inhibiting corrosion of metal multilayer films. Nevertheless, in the case of negative-type photoresist, it is difficult to remove by stripping compared to positive-type, and once the pattern is cured, it is impossible to repair it by removing only the defective parts. Additionally, due to wet etching, baking, and subsequent processes, a modified film forms on the metal wiring, and due to this modified film, there is a high possibility that corrosion will occur when the metal wiring comes into contact with the stripping solution composition. Referring to Patent Documents 1 to 3, conventional stripping solution compositions used amide-based or sulfur-based organic solvents, amines having hydroxyl groups, and triazole or imidazole-based corrosion inhibitors. Although there were no particular problems in terms of removing positive photoresist and preventing corrosion of metal wiring, they were not effective in removing modified thick negative photoresist. Consequently, photoresist remained on the surface, which lowered the yield of subsequent manufacturing processes and caused defects in the finished product. It should be noted that technical terms used in this specification are used merely to describe specific embodiments and are not intended to limit the invention. Furthermore, unless specifically defined otherwise in this specification, technical terms used in this specification should be interpreted in the sense generally understood by those skilled in the art to which the invention pertains, and should not be interpreted in an overly broad or overly narrow sense. Additionally, if a technical term used in this specification is an incorrect technical term that fails to accurately express the spirit of the invention, it should be understood as being replaced by a technical term that can be correctly understood by a person skilled in the art. In addition, general terms used in this invention should be interpreted according to their prior definitions or the context, and should not be interpreted in an overly narrow sense. Additionally, singular expressions used in this specification include plural expressions unless the context clearly indicates otherwise. In this application, terms such as “composed” or “comprising” should not be interpreted as necessarily including the various components or steps described in the specification, and should be interpreted as meaning that some of the components or steps may not be included, or that additional components or steps may be included. The present invention will be examined in more detail below through examples, but the scope of the present invention is not limited to the following examples. Photoresist stripping solution composition The present invention relates to a photoresist stripping solution composition comprising quaternary ammonium hydroxide, an alcohol-based polar solvent, an amine having a hydroxyl group, and a glycol ether compound. The composition is essential for quaternary ammonium hydroxide, but by including an alcohol-based polar solvent as a novel solvent, it can achieve excellent stripping power and exhibit an excellent effect in transfer removal. In order to strip the photoresist stripping solution composition, swelling and melting properties must be enhanced in the space secured by the penetration of an amine having a hydroxyl group, and the dissolution and decomposition ability of the photoresist composition (PAC: Photo active compound) can be enhanced by using the quaternary ammonium hydroxide and an alcohol-based polar solvent simultaneously. The above c