KR-20260066237-A - A method of manufacturing a composite including titanium dioxide and alumina through vacuum carbonization heat treatment

Abstract

A method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention relates to a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment that can be used as a material for semiconductor manufacturing equipment, and may be a method comprising: a step of manufacturing a sintered body by sintering titanium dioxide powder and alumina; a step of loading the sintered body and a carbon donor into a vacuum chamber; and a step of manufacturing a composite by performing vacuum carbonization heat treatment in the vacuum chamber.

Inventors

• 김동현
• 배철주
• 박정근
• 홍문기
• 김남호

Assignees

• (주)기연

Dates

Publication Date

20260512

Application Date

20241104

Claims (7)

1. A method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbide heat treatment to be used as a material for semiconductor manufacturing equipment, A step of manufacturing a sintered body by sintering titanium dioxide powder and alumina; Step of loading the above-mentioned sintered body and carbon donor into a vacuum chamber; and A step of manufacturing a composite by performing vacuum carbonization heat treatment in the above vacuum chamber; comprising Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
2. In paragraph 1, The step of manufacturing the above sintered body is, Satisfying a sintering temperature of 1300℃ or higher and 1500℃ or lower, Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
3. In paragraph 2, The step of manufacturing the above sintered body is, A sintered body satisfying a grain size of 1 μm to 10 μm, Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
4. In paragraph 3, The above sintered body is, Of the total weight, the content of the alumina is 0.01 wt % to 5 wt %, Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
5. In paragraph 1, The step of manufacturing the above composite is, vacuum carbonization heat treatment temperature of 800℃ or higher and 1300℃ or lower, Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
6. In paragraph 5, The step of manufacturing the above composite is, After vacuum carbonization heat treatment, the volume resistivity of the composite is 10¹ Ω·Cm to 10¹⁰ Ω·Cm, Method for manufacturing a composite containing titanium dioxide and alumina through vacuum carbide heat treatment.
7. A material for semiconductor manufacturing equipment manufactured by a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbide heat treatment according to any one of claims 1 to 6.

Description

A method of manufacturing a composite including titanium dioxide and alumina through vacuum carbonization heat treatment The present invention relates to a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment, and more specifically, to a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment that can be used as a material for semiconductor manufacturing equipment. In the manufacture of electronic products, particularly semiconductor products, if current flows in an unintended manner or sparks caused by current occur during the manufacturing process, product damage or defects may occur. Therefore, various components for electronic products or semiconductor manufacturing equipment, such as transfer arms, trays, chip mounting nozzles, vacuum chucks for wafer suction, and electrostatic chucks used for transporting semiconductor wafers, large glass substrates for displays, and electronic component chips, require antistatic capabilities that prevent static electricity from accumulating or allow for easy removal. Meanwhile, alumina ceramic refers to aluminum oxide, and ceramic parts made from aluminum oxide are among the materials with excellent wear resistance. They possess superior high hardness, wear resistance, heat resistance, chemical resistance (chemical resistance, corrosion resistance), high mechanical strength, dielectric strength, and high-voltage dielectric strength. Furthermore, since the manufacturing cost is favorable in terms of raw materials and processability, they are suitable as materials for processed components in electronic products, semiconductors, and other applications that utilize various chemicals and involve high-temperature process conditions. However, since pure alumina ceramic parts have very high insulation resistance, static electricity cannot be removed and tends to accumulate. This can lead to the adsorption of dust from the air, contaminating the part surface and posing a risk of electrostatic interference during the manufacturing process. To solve these problems, a method for manufacturing aluminum titanate ceramics through a sintering process using titanium dioxide ( TiO2 ) and alumina powder is currently being developed. In this regard, Korean registered patent No. 10-2135716 B1 (August 12, 2020) discloses a method for manufacturing aluminum titanate (Al2TiO5) ceramics in which thermal and mechanical stability is significantly improved through the appropriate blending of SiO2 and ZrO2 added for thermal and mechanical stabilization, in addition to simplifying the process by improving the manufacturing process. However, depending on the amount of alumina added, cracking and other phenomena occurred during the sintering process of titanium dioxide and alumina powders, and even when manufactured into a sintered body, there was a problem in that the volume resistivity was relatively high, making it unsuitable for semiconductor manufacturing equipment. FIG. 1 is a flowchart for explaining, in general, a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 2 is an experimental data table for explaining the step of manufacturing a sintered body using titanium dioxide powder and alumina powder in a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 3 is a photograph illustrating the grain size of a sintered body produced through the step of producing a sintered body using titanium dioxide powder and alumina powder in a method for producing a composite containing titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 4 is an experimental data table for explaining the step of manufacturing a sintered body using titanium dioxide powder and alumina powder in a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 5 is a photograph of an experimentally prepared sintered body to explain the step of preparing a sintered body using titanium dioxide powder and alumina powder in a method for preparing a composite containing titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 6 is an experimental data table for explaining the step of manufacturing a composite through vacuum carbonization heat treatment in a method for manufacturing a composite comprising titanium dioxide and alumina through vacuum carbonization heat treatment according to one embodiment of the present invention. FIG. 7 is a photograph of a composite experimentally pre