KR-20260066594-A - HIGH-QUALITY NANOTUBE CONTINUOUS SYNTHESIS DEVICE AND MANUFACTURING METHOD THERE OF

KR20260066594AKR 20260066594 AKR20260066594 AKR 20260066594AKR-20260066594-A

Abstract

The present invention provides a continuous boron nitride nanotube manufacturing apparatus and a continuous boron nitride nanotube manufacturing method, comprising: a reactor; a plasma generating device arranged opposite each other with respect to the reactor and forming a high-temperature plasma within the reactor by means of a high-frequency current; a raw material injection device extending through one side of the reactor to the interior of the reactor and providing a solid raw material including a precursor of the reaction; a raw material supply device supplying raw material to an inlet of the raw material injection device; a sensing device connected to the raw material supply device and controlling the raw material supply speed; and a gas injection and control device connected to one area of the reactor and supplying gas into the reactor; thereby providing an apparatus and a manufacturing method capable of providing boron nitride nanotubes continuously and in large quantities.

Inventors

문세연

Assignees

전북대학교산학협력단

Dates

Publication Date: 20260512
Application Date: 20250122
Priority Date: 20241104

Claims (16)

Reactor; A plasma generating device arranged to face each other with respect to the reactor and forming a high-temperature plasma within the reactor by means of a high-frequency current; A raw material injection device that penetrates one side of the reactor and extends into the interior of the reactor to provide a solid raw material containing a reaction precursor; A raw material supply device that supplies raw materials to the injection port of the above raw material injection device; A sensing device connected to the above-mentioned raw material supply device to control the raw material supply speed; and A continuous boron nitride nanotube manufacturing apparatus comprising: a gas injection and control device connected to one area of the reactor to supply gas inside the reactor.
In paragraph 1, A boron nitride nanotube continuous manufacturing apparatus, wherein the above-mentioned raw material injection device is extended to supply solid raw material to the center of the plasma when plasma is generated in the reactor.
In paragraph 1, The above-mentioned solid raw material is a boron nitride nanotube continuous manufacturing device in the form of nanowires.
In paragraph 1, A boron nitride nanotube continuous manufacturing apparatus having an inner diameter of 1 to 200 μm for the raw material injection device.
In paragraph 1, A continuous boron nitride nanotube manufacturing apparatus comprising a reactor in which plasma and raw materials react, and a nanomaterial collection device connected to be orthogonal to one end of the reactor.
In paragraph 1, A boron nitride nanotube continuous manufacturing apparatus, wherein the above-described raw material supply device includes a raw material supply disc and a pulley connected by a belt and spaced apart from each other, and the pulley is designed to be rotatable by including a spaced-apart second pulley and a third pulley and a first pulley connecting the second pulley and the third pulley.
In paragraph 5, The above-mentioned raw material supply device is a boron nitride nanotube continuous manufacturing device in which the rotational direction of the first pulley is opposite to the rotational direction of the second and third pulleys.
In paragraph 5, A boron nitride nanotube continuous manufacturing apparatus in which the above raw material supply disk includes a plurality of disks and supplies a plurality of solid raw materials to the above raw material supply device.
In paragraph 1, A boron nitride nanotube continuous manufacturing apparatus, wherein the above-described sensing device detects the consumption of raw materials within the reactor and controls the raw material supply speed of the raw material supply device to 10 g per minute or less.
In paragraph 1, The above plasma generator is a boron nitride nanotube continuous manufacturing apparatus comprising inductively coupled plasma.
In Paragraph 10, The above plasma generator is a boron nitride nanotube continuous manufacturing apparatus having a frequency of 1 MHz to 5 GHz.
In Paragraph 10, The above plasma is a boron nitride nanotube continuous manufacturing apparatus having a central temperature of 4,000 to 8,000 K.
A step of generating plasma gas by injecting a plasma generating gas into a reactor; and A method for continuously manufacturing boron nitride nanotubes, comprising the step of reacting the above plasma gas with a solid raw material continuously supplied to a reactor to manufacture boron nitride nanotubes.
In Paragraph 13, A method for the continuous production of boron nitride nanotubes, wherein the plasma generating gas comprises nitrogen, hydrogen, argon, and combinations thereof.
In Paragraph 13, A method for continuously manufacturing boron nitride nanotubes, wherein the above-mentioned solid raw material comprises a wire containing boron.
In Paragraph 13, A continuous manufacturing method for boron nitride nanotubes, wherein the above-mentioned solid raw material is supplied to the center of the plasma exhibiting the highest temperature of the plasma gas.

Description

High-Quality Nanotube Continuous Synthesis Device and Manufacturing Method Thereof The present invention relates to a continuous synthesis apparatus for high-quality nanotubes using high-temperature plasma and a method for manufacturing the same. Generally, nanotubes are one-dimensional nanomaterials in the form of tubes in which atoms are arranged in a cylindrical shape with a diameter of several nanometers, and representative examples include carbon nanotubes (CNT) and boron nitride nanotubes (BNNT). Carbon nanotubes (CNTs) are materials attracting attention for their potential applications across various industries due to their excellent mechanical properties, low electrical resistivity, and high thermal conductivity. Recently, active research has been conducted on technologies capable of synthesizing large quantities of high-purity carbon nanotubes at once, with methods including arc discharge, laser deposition, CVD, fluidized bed reactors, and HiPco. Boron nitride nanotubes have mechanical and thermal conductivity properties similar to those of commonly known carbon nanotubes. However, while CNTs exist as a mixture of electrical conductors and semiconductors and exhibit low thermal and chemical stability due to oxidation at temperatures above approximately 400°C, boron nitride nanotubes possess a wide energy bandgap of about 5 eV, exhibiting electrical insulation and thermal stability even in air at high temperatures above approximately 800°C. Furthermore, the boron constituting boron nitride nanotubes has a thermal neutron absorption capacity approximately 200,000 times higher than that of the carbon constituting carbon nanotubes, making them a useful material for radiation shielding. Nanotubes composed of heterogeneous atoms, such as boron nitride nanotubes, can be synthesized using methods applied to conventional carbon nanotubes, such as ball milling, vapor deposition, sol-gel, and catalytic processes; however, these methods suffer from the disadvantage of producing very small quantities. Additionally, while laser melting is utilized, daily production is limited to just a few milligrams, and synthesis costs remain very high. Accordingly, nanotube synthesis methods using high-temperature plasma, which allow for the input of solid raw materials, are gaining attention as a suitable method for synthesizing boron nitride nanotubes in large quantities. In the early 2000s, large-scale synthesis methods for boron nitride nanotubes using direct current (DC) and radio frequency (RF) were reported, primarily in the United States and Canada. These methods demonstrated that high-temperature plasma synthesis is suitable for large-scale synthesis compared to conventional methods, with a processing rate of several grams per hour. In particular, high-temperature plasma using radio frequency has the advantage of reducing contamination issues because the electrodes are not exposed to the plasma. Furthermore, the high temperature of over several thousand degrees allows for the melting and atomization of the injected powder, and the synthesis of desired nanotubes is facilitated by adding various gases, such as hydrogen and nitrogen, to the plasma generation gas. However, in the case of synthetic nanotubes using high-temperature plasma, the principle is utilized in which the basic raw materials are supplied to a reactor in powder form through a feeder, and nanotubes are formed during the cooling process after the powder is melted and atomized inside the high-temperature plasma. At this time, the boron nitride nanotubes produced are significantly affected by the amount of raw material powder supplied, the dispersion of the powder within the chamber, and the particle size distribution of the powder. For example, regarding the particle size distribution, powder particles that are too small may be rapidly atomized, while large powder particles may not melt sufficiently and act as impurities. Additionally, due to the characteristics of the plasma, there is a temperature distribution in the high-temperature region of the plasma; therefore, powder particles with large particle sizes passing through the low-temperature region may not be sufficiently melted and atomized, and may act as impurities. Accordingly, there is a need for an apparatus and a manufacturing method that can produce high-quality boron nitride nanotubes without being affected by the form of raw material injection and temperature distribution of high-temperature plasma. Figure 1 is a diagram showing the problems of the prior art. FIG. 2 is a diagram showing a nanotube synthesis apparatus according to one embodiment of the present invention. FIG. 3 is a diagram showing a nanotube synthesis apparatus according to another embodiment of the present invention. FIG. 4 is a drawing showing a raw material supply device according to one embodiment of the present invention. FIG. 5 is a drawing showing a raw material supply device according to another embodiment of the pr