KR-20260066604-A - Ion Source Comprising An Ion Sensor For Measuring Ion Concentration Of A Baffle

KR20260066604AKR 20260066604 AKR20260066604 AKR 20260066604AKR-20260066604-A

Abstract

One embodiment may provide an ion source comprising: an output unit including an anode electrode, a cathode electrode, and an output case, which generates and outputs ions by means of an electric field and a magnetic field; and a source body located on one side of the output unit and which transmits a voltage for generating ions to the anode electrode of the output unit; wherein the output unit generates ions between the anode electrode and the cathode electrode using the voltage, and the output unit is connected to one port of a chamber and communicates with the internal space of the chamber in a vacuum state to utilize the atmosphere of the internal space of the chamber, outputs the ions to the internal space of the chamber using the magnetic field, prevents ions from being directly projected onto an object through a baffle located in the direction in which the ions are output, measures the ion concentration at one location on the surface of the baffle, and further comprises an ion sensor connected to a control device located outside the chamber via a wired monitoring cable or a wireless monitoring signal.

Inventors

김홍직
임영진
신준철

Assignees

주식회사 저스템

Dates

Publication Date: 20260512
Application Date: 20250521
Priority Date: 20241104

Claims (11)

An output unit comprising an anode electrode, a cathode electrode, and an output case, which generates and outputs ions by an electric field and a magnetic field; and A source body located on one side of the output unit and transmitting a voltage for generating ions to the anode electrode of the output unit; comprising The output unit generates ions between the anode electrode and the cathode electrode using the voltage, and the output unit is connected to one port of the chamber and communicates with the internal space of the chamber in a vacuum state, thereby utilizing the atmosphere of the internal space of the chamber, outputs the ions into the internal space of the chamber using the magnetic field, and prevents the ions from being directly projected onto an object through a baffle positioned in the direction in which the ions are output. An ion source comprising an ion sensor for measuring the ion concentration of a baffle, further comprising: an ion sensor that measures the ion concentration at one location on the surface of the baffle and is connected to a control device located outside the chamber via a wired monitoring cable or a wireless monitoring signal.
In paragraph 1, The above chamber includes a service port for connecting to a utility and auxiliary device and a view port for visually observing the inside of the chamber, and the output part includes an ion sensor for measuring the ion concentration of a baffle connected to the service port or the view port.
In paragraph 1, An ion source comprising an ion sensor for measuring the ion concentration of a baffle, wherein the cathode electrode comprises a central cathode electrode located at the center of an opening and an edge cathode electrode located at the edge of an opening, wherein the central cathode electrode is located at the inner center of a circular output case and the edge cathode electrode is located at the inner edge of the output case and is electrically connected to have the same potential.
In paragraph 1, An ion source comprising an ion sensor for measuring the ion concentration of a baffle, wherein the baffle is connected to one side of the output unit through a baffle connection unit so as to be positioned spaced apart from the output unit.
In paragraph 4, The above baffle connection part is, An ion sensor fixing part for fixing the above ion sensor to one side, A baffle connection length adjustment unit capable of adjusting the length to control the degree of spreading of the above ions, and An ion source comprising an ion sensor for measuring the ion concentration of a baffle, comprising an insulating portion located on the other side connected to the output portion.
In paragraph 4, An ion source comprising an ion sensor for measuring the ion concentration of a baffle, wherein the baffle connection portion further includes a tilting unit for adjusting the angle of the baffle to control the output direction of the ion.
In paragraph 6, The above tilting unit is an ion source comprising an ion sensor for measuring the ion concentration of a baffle, comprising a hinge housing, a pivot hinge, and a fixing unit.
In paragraph 1, The above baffle has at least one baffle groove and is formed in at least one of a circular, rectangular, conical, and polygonal shape, and An ion source comprising an ion sensor for measuring the ion concentration of a baffle, wherein the baffle groove is provided in a recessed shape at the edge of the baffle, and the ion is output in the direction of the baffle groove.
A method for controlling an ion source comprising an ion sensor for measuring the ion concentration of a baffle according to any one of claims 1 to 8, wherein A data generation step that generates ion concentration data by measuring the ion concentration at a specific location on the baffle surface, fixed through a baffle connection; and A method for controlling an ion source comprising an ion sensor for measuring the ion concentration of a baffle, comprising: an ion generation amount control step for controlling the amount of ions generated from an ion source by adjusting the voltage level transmitted from the source body to the anode electrode according to generated ion concentration data.
In Paragraph 9, A control method for an ion source comprising an ion sensor that measures the ion concentration of a baffle, wherein if the measured ion concentration is below a reference concentration, the voltage level transmitted from the source body to the anode electrode is increased to increase the amount of ions generated.
In Paragraph 9, A control method for an ion-forming device capable of performance monitoring, wherein if the measured ion concentration exceeds a reference concentration, the voltage level transmitted from the source body to the anode electrode is returned to an initial value to lower the amount of ions generated.

Description

Ion Source Comprising An Ion Sensor For Measuring Ion Concentration Of A Baffle The present embodiment relates to an ion source comprising an ion sensor for measuring the ion concentration of a baffle, which can accurately determine whether the ion source is operating normally by measuring the ion concentration of the baffle itself, by utilizing the fact that ions are charged on the surface of the baffle that is directly affected by ions generated from the ion source. Static electricity is generated by various causes, including friction and peeling. Such static electricity can occur in diverse environments, regardless of whether the material is a solid, liquid, insulator, or conductor. While the generated static electricity consists of equal amounts of positive and negative charges, in actual processes, static electricity of only one polarity often appears due to the difference in capacitance between the two. In the manufacturing process of electronic devices such as memory devices, flat panel displays, and integrated circuits, foreign substances may adhere to the electronic devices due to the generation of static electricity, or patterns may be damaged by electrostatic discharge. Various methods are being implemented to suppress or eliminate such static electricity generation, and methods to eliminate static electricity using ionization devices are mainly being proposed. Ionization devices generate positive and negative ions and release them into the air using a fan or compressed air, and the released ions neutralize the charged particles by providing ion particles opposite to the charged particles of the substrate where static electricity is generated, thereby eliminating static electricity. However, conventional ionization devices for electrostatic discharge release ions into the air in a non-vacuum environment, which presents a problem in that they are difficult to apply in vacuum environments where high cleanliness must be maintained. Conventional electrostatic discharge processes involve two steps: forming a thin film of an electronic device in a vacuum environment, and then removing static electricity through a separate discharge process in a non-vacuum environment. Conventional electrostatic discharge devices have limitations in preventing device damage caused by static electricity because the thin film process and the static discharge process are separated, making it impossible to immediately remove static electricity generated during thin film formation. In addition, conventional electrostatic discharge devices may cause damage to the substrate because they directly irradiate the substrate with ion particles and ion light generated during the ion generation process. Furthermore, since it is difficult to determine from the outside whether ions are being generated normally and an antistatic effect is occurring in the electrostatic removal device, it was difficult to accurately determine whether the electrostatic removal device was operating normally. Figure 1 is a drawing showing a chamber that performs a specific process in a vacuum. FIG. 2 is a diagram showing an ion source coupled to a chamber according to one embodiment. FIGS. 3 and FIGS. 4 are drawings showing a side cross-section of an ion source according to one embodiment. FIG. 5 is a drawing showing a part of the upper surface of an ion source according to one embodiment. FIG. 6 is a diagram showing the installation location of an ion source according to one embodiment. FIG. 7 is a first example drawing showing a baffle disposed in the output portion of an ion source according to one embodiment. FIG. 8 is a drawing showing the length of the baffle connection portion adjusted in a first exemplary drawing showing a baffle arranged in the output portion of an ion source according to one embodiment. FIG. 9 is a drawing showing the angle of the baffle adjusted in a first exemplary drawing showing a baffle arranged in the output portion of an ion source according to one embodiment. FIG. 10 is a drawing showing that the cross-sectional area size of the baffle is adjusted in a first exemplary drawing showing that the baffle is arranged in the output portion of an ion source according to one embodiment. FIG. 11 is a drawing showing a baffle connection portion for connecting a baffle to the output portion of an ion source according to one embodiment. FIG. 12 is a diagram showing that an ion sensor is fixed by the ion sensor fixing part of the baffle connection part. FIG. 13 is an example drawing of the shape of a baffle according to one embodiment. FIG. 14 is a first example drawing showing a control device connected to an ion sensor according to one embodiment. FIG. 15 is a second exemplary drawing showing a control device connected to an ion sensor according to one embodiment. FIG. 16 is a schematic diagram showing a method for controlling an ion source including an ion sensor for measuring the ion concentration of a baffle according to one embodim