KR-20260066633-A - METHOD AND SYSTEM FOR SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL ON METAL SURFACE

Abstract

A method for selectively depositing a dielectric material on a metal surface compared to a nonmetal surface is disclosed. An exemplary method comprises the steps of selectively forming a desired terminal functional group on a nonmetal surface using a first reactant, and selectively reacting a second reactant with the terminal functional group to selectively form an organic layer on the nonmetal surface.

Inventors

• 비안나 아담
• 카헬 크르지츠토프 카밀
• 매클라우드 에런
• 로드리게즈 레오나르드
• 마르티네스 크리스티나 폴라

Assignees

• 에이에스엠 아이피 홀딩 비.브이.

Dates

Publication Date

20260512

Application Date

20251031

Priority Date

20241104

Claims (20)

1. A method for selectively depositing a dielectric material on a metal surface compared to a non-metal surface, wherein the method comprises: A step of providing a substrate into the reaction chamber of a reactor; A step of providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metal surface compared to the metal surface to form -OSiH functional groups on the non-metal surface; and Step of providing a second reactant Includes, A method in which the second reactant selectively reacts with the -OSiH functional group relative to the metal surface to selectively form an organic layer on the non-metal surface relative to the metal surface.
2. In paragraph 1, A method comprising the first reactant comprising an amino silane.
3. In paragraph 2, The above aminosilane comprises a silicon bonded to at least one nitrogen and at least one hydrogen, in a method.
4. In paragraph 1, The above metal surface comprises a metal material, a method.
5. In paragraph 1, A method in which the metal surface is essentially composed of one or more of a metal or a metal alloy.
6. In paragraph 1, The above second reactant comprises an alkene or alkene terminal functional group, in a method.
7. In paragraph 1, A method comprising the second reactant comprising a C2-C18, C2-C10, or C2-C8 linear, branched, or cyclic hydrocarbon or a fluorine-substituted derivative thereof.
8. In paragraph 1, The above second reactant is represented by the compositional formula C x H y F z , where X is an integer from about 2 to about 24, y is an integer from 0 to about 36, and z is an integer from 0 to about 36, in a method.
9. In paragraph 1, A method in which the second reactant comprises one or more of a thiol or a disulfide.
10. In Paragraph 9, The above thiol is represented by the compositional formula R-SH, where R is a C1-C18 linear, branched, or cyclic hydrocarbon or a fluorine-substituted derivative thereof, method.
11. In Paragraph 9, The above disulfide is represented by the compositional formula R'-SSR", where each R' and R" is independently a C1-C18 linear, branched, or cyclic hydrocarbon or a fluorine-substituted derivative thereof, method.
12. In paragraph 1, A method in which the second reactant comprises one or more of an alcohol or an aldehyde.
13. In Paragraph 12, The above aldehyde is represented by the following compositional formula, Here, R is a C1-C18 linear, branched, or cyclic hydrocarbon, method.
14. In Paragraph 12, The above aldehyde is represented by the compositional formula C n H2 n+1 OH, where n is 1 to 18, method.
15. In paragraph 1, The above dielectric material is a metal oxide, nitride, or carbide or a metalloid oxide, nitride, or carbide.
16. In paragraph 1, A method further comprising the step of selectively depositing the dielectric material on the metal surface.
17. In Paragraph 16, A method comprising the step of selectively depositing the dielectric material on the metal surface and then removing the organic layer.
18. A method for selectively depositing a dielectric material on a metal surface compared to a non-metal surface, The above method is, A step of providing a substrate into the reaction chamber of a reactor; A step of providing a first reactant to the reaction chamber, wherein the first reactant selectively reacts with the non-metal surface compared to the metal surface to form -OSiH functional groups on the non-metal surface; and Step of providing the second reactant to the reaction chamber Includes, The first reactant above comprises an amino silane, and The second reactant comprises one or more of (1) a C2-C18 alkene or alkyne or a fluorine-substituted derivative thereof, (2) an organic-sulfur compound, (3) an alcohol, or (4) an aldehyde, and A method in which the second reactant selectively reacts with the -OSiH functional group relative to the metal surface to selectively form an organic layer on the non-metal surface relative to the metal surface.
19. In Paragraph 18, A method further comprising the step of selectively depositing the dielectric material on the metal surface.
20. As a reactor system, A controller configured to perform the method of claim 1; A source vessel comprising the first reactant and coupled to the reaction chamber; A source vessel comprising the above-mentioned second reactant and coupled to the reaction chamber; The above reactor; and vacuum source A reactor system including

Description

Method and System for Selective Deposition of Dielectric Material on Metal Surface The present disclosure generally relates to a method of depositing a material on a substrate. More specifically, the present disclosure relates to selectively depositing a dielectric material on a metal surface using a selectively formed passivation film. Dielectric material films or layers are used in a wide variety of applications. For example, dielectric material films can be used to form insulating regions, diffusion barriers, surface passivations, and various device components such as gate structures, capacitors, etc. To form a region or feature containing a dielectric material, the dielectric material is typically deposited on the surface of a substrate. The deposited film is then patterned, for example, using photolithography, and subsequently etched to remove a portion of the dielectric material, thereby forming a desired feature or region containing the remaining dielectric material. As the size of the device feature continues to decrease, it becomes increasingly difficult to pattern and etch the dielectric material film to form a feature or region of the patterned dielectric material of the desired size, particularly when depositing the dielectric material within vias or trenches on the substrate surface. Furthermore, the lithography and etching steps can increase the cost associated with device manufacturing and extend the time required for device fabrication. Therefore, an improved method for selectively forming dielectric materials on a metal surface is required. The content of the present invention introduces a selection of concepts in a simplified form, which may be described in more detail below. The content of the present invention is not intended to essentially identify the principal or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Various embodiments of the present disclosure provide a method and a reactor system for selectively depositing a dielectric material on a metal surface compared to a non-metal surface. As described in more detail below, selective deposition can be achieved by selectively forming a blocking or passivation layer on a non-metal surface compared to a metal surface. The blocking or passivation layer can prevent or mitigate the unwanted deposition of the dielectric material on the non-metal surface. According to various embodiments of the present disclosure, a method for depositing a dielectric material on a metal surface relative to a nonmetal surface comprises the steps of providing a substrate within a reaction chamber of a reactor, providing a first reactant to the reaction chamber, and providing a second reactant to the reaction chamber. According to an example of the present disclosure, the first reactant selectively reacts with the nonmetal surface relative to the metal surface to form -OSiH functional groups on the nonmetal surface, and the second reactant selectively reacts with the -OSiH functional groups relative to the metal surface to selectively form an organic layer on the nonmetal surface relative to the metal surface. The organic layer may serve as a passivation or blocking layer for subsequent deposition of a dielectric material on the metal surface. According to additional examples, the first reactant is an amino silane or comprises such an amino silane. In some cases, the second reactant may comprise an alkene and/or an alkene terminal functional group. In some cases, the second reactant is represented by the formula C x H y F z , where X is an integer from about 2 to about 24 or from about 2 to about 18 or from about 2 to about 12, y is an integer from about 0 to about 36 or from about 1 to about 24 or from about 1 to about 12, and z is an integer from 0 or from about 0 to about 36 or from about 1 to about 24 or from about 1 to about 12. In some cases, the second reactant is a thiol or includes it. In some cases, the second reactant is a disulfide or includes it. In some cases, the second reactant is an alcohol or includes an alcohol. In some cases, the second reactant is an aldehyde or includes it. In some cases, the second reactant comprises one or more of (1) a C2-C18 alken or alkyne or a fluorine-substituted derivative thereof, (2) a sulfur compound, (3) an alcohol, or (4) an aldehyde. The above method may also include a step of selectively depositing a dielectric material on a metal surface. The method may further include a step of removing an organic layer after selectively depositing a dielectric material on a metal surface. According to a further embodiment, the reactor system comprises a controller, a source vessel containing the first reactant and coupled to the reaction chamber, a source vessel containing the second reactant and coupled to the reaction chamber, the reactor, and a vacuum source. The controller may be configured to perform the method described herein, or the