KR-20260066702-A - Composition for forming a protective film, protective film, method for manufacturing a substrate, and method for manufacturing a semiconductor device

Abstract

A composition for forming a protective film on a wet etching solution for semiconductors, comprising: a component (A): a film-forming component; a component (B): a compound selected from the group consisting of a condensed tannin (b1) formed by polymerizing a compound having a flavanol backbone, a hydrolyzable tannin (b2) formed by ester bonding an aromatic compound of gallic acid or ellagic acid with a sugar, and a flavonoid (b3) derived from a compound having a flavanone backbone structure; and a component (C): a solvent.

Inventors

• 니시타 도키오
• 기노시타 가즈히코
• 다나카 다쿠미
• 엔도 유키

Assignees

• 닛산 가가쿠 가부시키가이샤

Dates

Publication Date

20260512

Application Date

20240906

Priority Date

20230908

Claims (10)

1. Component (A): Film-forming component, Component (B): A compound selected from the group consisting of a condensation-type tannin (b1) formed by the polymerization of a compound having a flavanol skeleton, a hydrolyzable tannin (b2) formed by the ester bonding of an aromatic compound of gallic acid or ellagic acid and a sugar, and a flavonoid (b3) derived from a compound having a flavanone skeleton structure, and Ingredient (C): Solvent A composition for forming a protective film on a wet etching solution for semiconductors, comprising
2. In Article 1, A composition for forming a protective film, wherein the above component (B) is one or more compounds selected from the above condensation-type tannin and the above hydrolyzable tannin.
3. In Article 1, A protective film-forming composition in which the above component (B) is the above hydrolyzable tannin.
4. In Paragraph 3, A protective film-forming composition in which the above hydrolyzable tannin is a tannic acid represented by the following formula (I). (In the above formula (I), G independently represents a hydrogen atom or a monovalent group represented by the following formula (II).) (In the above formula (II), n represents an integer from 0 to 3. Provided, the number of benzene rings in the above formula (I) is 4 or more and 17 or less. * indicates a bond loss.)
5. In Article 1, Additionally, component (D): a composition for forming a protective film comprising a curing catalyst.
6. In Article 1, A composition for forming a protective film, wherein the content of the above component (B) is 0.1 to 50 mass% with respect to the mass of the solid content of the above component (A).
7. A protective film for a wet etching solution for semiconductors, which is a sintered product of a coating film made of a composition for forming a protective film as described in any one of claims 1 to 6.
8. A method for manufacturing a substrate having a protective film formed thereon, used in the manufacture of a semiconductor, comprising the process of applying a protective film-forming composition described in any one of claims 1 to 6 onto a semiconductor substrate and firing to form a protective film.
9. A process of forming a protective film as a resist underlayer by applying a composition for forming a protective film described in any one of claims 1 to 6 onto a semiconductor substrate and firing it, and A process of forming a resist film directly on the protective film or via another layer, and then exposing and developing to form a resist pattern. A method for manufacturing a substrate having a resist pattern formed thereon, used in the manufacture of semiconductors, comprising:
10. A method for manufacturing a semiconductor device comprising the steps of: forming a protective film on a semiconductor substrate on which an inorganic film may be formed on the surface using a composition for forming a protective film as described in any one of claims 1 to 6; forming a resist pattern on the protective film; dry-etching the protective film using the resist pattern as a mask; exposing the surface of the inorganic film or the semiconductor substrate; and wet-etching and cleaning the inorganic film or the semiconductor substrate using a wet-etching solution for semiconductors using the protective film after dry-etching as a mask.

Description

Composition for forming a protective film, protective film, method for manufacturing a substrate, and method for manufacturing a semiconductor device The present invention relates to a composition for forming a protective film, which has excellent resistance to wet etching solutions for semiconductors, in particular, in a lithography process for semiconductor manufacturing. Furthermore, the invention relates to a method for manufacturing a substrate having a resist pattern formed thereon using the composition for forming a protective film, and a method for manufacturing a semiconductor device. In semiconductor manufacturing, a lithography process is widely known in which a resist underlayer is formed between a substrate and a resist film formed thereon, and a resist pattern of a desired shape is formed. After forming the resist pattern, the substrate is processed. Dry etching is mainly used for this process, but wet etching may be used depending on the type of substrate. Patent Document 1 discloses a resist underlayer material having resistance to alkaline hydrogen peroxide. FIG. 1A is a cross-sectional view schematically showing a part of a semiconductor substrate used in an immunity test. FIG. 1B is a cross-sectional view schematically showing a part of a semiconductor substrate on which a protective film is formed. FIG. 1C is a cross-sectional view schematically showing a portion of a semiconductor substrate after dry etching. FIG. 1D is a cross-sectional view schematically showing a portion of a semiconductor substrate after wet etching. (Composition for forming a protective film) The protective film-forming composition of the present invention is a composition for forming a protective film. The protective film is preferably a protective film that protects the inorganic film of a semiconductor substrate, on which an inorganic film is formed on the surface, from wet etching. A composition for forming a protective film comprises component (A), component (B), and component (C). Component (A) is a membrane-forming component. Component (B) is a compound selected from the group consisting of a condensed tannin (b1) formed by polymerizing a compound having a flavanol backbone, a hydrolyzable tannin (b2) formed by ester bonding an aromatic compound of gallic acid or ellagic acid with a sugar, and a flavonoid (b3) derived from a compound having a flavanone backbone structure. Component (C) is a solvent. The inventors conducted a thorough investigation to form a protective film with excellent resistance to wet etching solutions for semiconductors. They discovered that by including an additive having an aromatic ring and an aromatic hydroxyl group (e.g., gallic acid) in a composition for forming a protective film, a protective film with excellent resistance to wet etching solutions for semiconductors can be formed. However, the inventors have discovered that when the above-mentioned additive is included in a composition for forming a protective film, the amount of sublimation generated from the protective film increases. Therefore, as a result of further investigation, it was discovered that by including a specific component (B) rather than simply including an additive having an aromatic ring and an aromatic hydroxyl group in the composition for forming a protective film, it is possible to form a protective film with excellent resistance to wet etching solution for semiconductors while suppressing the generation of sublimation, and thus the present invention was completed. <Ingredient (A)> Component (A) is a film-forming component. In this specification, the term "film-forming component" refers to a component other than component (B) and component (C) in a composition for forming a protective film. The film-forming component includes, for example, an organic compound. The organic compound may be a low-molecular-weight compound or a high-molecular-weight compound (polymer). Examples of such organic compounds include the following compounds. · A compound having a group represented by Formula (1) at a side chain or terminal in a protective film-forming composition described in Pamphlet No. 2017/191767, with a weight average molecular weight of 800 or more · A compound represented by Formula (1a) or Formula (1b) in a protective film-forming composition described in Pamphlet No. 2018/052130, a compound having a molecular weight of 300 or more and less than 800 having a substituent represented by Formula (2), or a compound having a weight average molecular weight of 300 or more and less than 800 · Resins in the protective film-forming compositions described in Pamphlet No. 2018/203464 (e.g., polyester, polyether, polyetheretherketone, novolak resin, maleimide resin, acrylic resin, and methacrylic resin) · A compound comprising at least one set of two adjacent hydroxyl groups within a molecule, or a polymer thereof, in a protective film-forming composition described in Pamphlet No. 2019/124474. · A compound comprising at