KR-20260066716-A - A substrate for semiconductor manufacturing, a method for manufacturing a substrate for semiconductor manufacturing, and a method for manufacturing a semiconductor substrate

Abstract

A semiconductor manufacturing substrate having excellent resistance to the breakdown of a resist pattern, a method for manufacturing a semiconductor manufacturing substrate, and a method for manufacturing a semiconductor substrate are provided. A semiconductor manufacturing substrate having a substrate having a thin film, wherein the thin film has a group derived from a compound represented by the following formula (1). (In Equation (1), R1 is an n-valent organic group having 1 to 40 carbon atoms. n is an integer from 1 to 4.)

Inventors

• 야마다, 슈헤이
• 요네다, 에이지

Assignees

• 제이에스알 가부시키가이샤

Dates

Publication Date

20260512

Application Date

20240830

Priority Date

20230907

Claims (11)

1. A substrate having a thin film is provided, The above thin film has a group derived from a compound represented by the following formula (1), Substrate for semiconductor manufacturing. (In Equation (1), R1 is an n-valent organic group having 1 to 40 carbon atoms. n is an integer from 1 to 4.)
2. A substrate for manufacturing semiconductors, wherein the thin film is a film formed by a gas phase reaction between a compound represented by formula (1) and a substrate in claim 1.
3. A substrate for semiconductor manufacturing according to claim 1, wherein the organic group comprises heteroatoms or unsaturated bonds.
4. A substrate for manufacturing semiconductors according to any one of claims 1 to 3, wherein the film thickness of the thin film is 2 nm or less.
5. A substrate for semiconductor manufacturing used in EUV lithography, in any one of paragraphs 1 to 3.
6. A method for manufacturing a substrate for semiconductor manufacturing, comprising a contact process of contacting a substrate with a compound represented by the following formula (1). (In Equation (1), R1 is an n-valent organic group having 1 to 40 carbon atoms. n is an integer from 1 to 4.)
7. In Clause 6, prior to the above contact process, A vaporization process for vaporizing the compound represented by the above formula (1). A method for manufacturing a substrate for semiconductor manufacturing, comprising
8. A process of forming a resist film on a semiconductor manufacturing substrate obtained by the method for manufacturing a semiconductor manufacturing substrate described in claim 6 or 7, and A process of exposing the above resist film by radiation, and At least a process for developing the above-mentioned exposed resist film A method for manufacturing a semiconductor substrate, comprising
9. A method for manufacturing a semiconductor substrate according to claim 8, wherein the radiation is extreme ultraviolet.
10. A method for manufacturing a semiconductor substrate according to claim 8, wherein the resist film contains metal.
11. A method for manufacturing a semiconductor substrate according to claim 10, wherein the resist film is formed by a composition for forming a metal-containing resist film, and the composition for forming a metal-containing resist film contains a metal-containing compound and a solvent, and the content ratio of the metal-containing compound in the components other than the solvent in the composition for forming a metal-containing resist film is 50 mass% or more.

Description

A substrate for semiconductor manufacturing, a method for manufacturing a substrate for semiconductor manufacturing, and a method for manufacturing a semiconductor substrate The present invention relates to a substrate for semiconductor manufacturing, a method for manufacturing a substrate for semiconductor manufacturing, and a method for manufacturing a semiconductor substrate. For pattern formation in the manufacture of a semiconductor substrate, a multilayer resist process is used, for example, to form a patterned substrate by etching using a resist pattern obtained by exposing and developing a resist film stacked on a substrate through an organic underlayer film, a silicon-containing film, etc., as a mask. As the high integration of semiconductor devices progresses further, there is a tendency for the exposure light used to become shorter wavelengths, moving from KrF excimer lasers (248 nm) and ArF excimer lasers (193 nm) to extreme ultraviolet light (13.5 nm, hereinafter also referred to as "EUV"). Along with the thinning and narrowing of the resist patterns formed by these technologies, thinning of the resist underlayer film is also required. A technology for forming a thin film on a silicon wafer by silane coupling treatment in the vapor phase has been proposed (see Japanese Patent Publication No. 2014-74731). Hereinafter, a substrate for manufacturing a semiconductor, a method for manufacturing a substrate for manufacturing a semiconductor, and a method for manufacturing a semiconductor substrate according to each embodiment of the present invention will be described in detail. A combination of suitable embodiments is also preferred in the embodiments. Substrates for semiconductor manufacturing The substrate for manufacturing the semiconductor comprises a substrate having a thin film. The thin film has a group derived from [A] compound. (Circuit board) As for the substrate, any object capable of forming a thin film having a group derived from [A] compound on its surface is not particularly limited. Examples of substrates include metal or semimetal substrates such as silicon substrates, aluminum substrates, nickel substrates, chromium substrates, molybdenum substrates, tungsten substrates, copper substrates, tantalum substrates, and titanium substrates, among which a silicon substrate is preferred. An inorganic film or an organic film may be formed on the substrate. Examples of inorganic films include silicon nitride films, alumina films, SiO2 films formed by CVD, TiON films, SiON films, SiOC films, carbon hard masks (amorphous carbon films), tantalum nitride films, titanium nitride films, and spin-on-glass (SOG) films. Examples of organic films include anti-reflective films. The surface of the substrate may be flat, or it may have a three-dimensional structure such as a trench structure. It is preferable that at least one polar group selected from the group consisting of -OH, -SH, and -NR2 (where R is independently a hydrogen atom or a monovalent hydrocarbon group having 1 to 5 carbon atoms) be present on the outermost layer of the substrate, and it is more preferable that -OH be present. As described below, a [A] compound is brought into contact with the surface of the substrate, and further chemically reacted with the [A] compound to form a thin film having a group derived from the [A] compound on the surface of the substrate. At that time, by introducing the polar group into the outermost layer of the substrate, the chemical reaction with the isocyanate group of the [A] compound can be carried out, thereby allowing the thin film to be formed efficiently. It is preferable that the substrate be surface-treated in advance. Examples of surface treatments include cleaning with organic solvents or treatment with UV ozone. UV ozone treatment is preferred as a surface treatment. By doing so, the polar groups can be suitably introduced onto the surface of the substrate. (pellicle) The thin film has a group derived from [A] compound. The method of introducing the group derived from [A] compound into the thin film is not particularly limited, but it is preferable that the thin film is a film produced by a gas-phase reaction between the compound represented by Formula (1) and the substrate. By using a gas-phase reaction, the introduction rate of the group derived from [A] compound can be increased, and at the same time, variations in film thickness are reduced, and a thin film with a monolayer level of very thinness can be formed. The upper limit of the film thickness of the above thin film is preferably 2.5 nm, more preferably 2.2 nm, even more preferably 2 nm, and particularly preferably 1.8 nm. The lower limit of the film thickness is preferably 0.8 nm, more preferably 1 nm, and even more preferably 1.2 nm. ([A] Compound) [A] Compound is a compound represented by the following formula (1). Also, [A] Compound does not contain silicon atoms. (In Equation (1), R1 is an n-valent organic group having 1 to 40 c