KR-20260066754-A - Alloy powder-containing composition and semiconductor device

Abstract

The present disclosure provides an alloy powder-containing composition that is compliant with environmental regulations, operates at high temperatures, and has excellent emulsibility and bonding reliability. The alloy powder-containing composition of the present disclosure is characterized by comprising an alloy powder having an AgSi eutectic structure, silver (Ag) powder, and an organic material. Furthermore, the present disclosure preferably has a silver (Ag) content of 15 to 97.6 mass% relative to the total amount of the alloy powder, a silver (Ag) powder content of 5 to 2000 mass parts relative to 100 mass parts of the alloy powder, and a silver content of 20 to 99.9 mass% relative to the total amount of the alloy powder and the silver (Ag) powder.

Inventors

• 사카모토, 다케시
• 우에시마, 미노루
• 천, 촨퉁
• 류, 양
• 나오에, 다쿠야

Assignees

• 주식회사 다이셀
• 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸

Dates

Publication Date

20260512

Application Date

20240903

Priority Date

20230908

Claims (6)

1. An alloy powder-containing composition comprising an alloy powder having an AgSi process structure, silver (Ag) powder, and an organic material.
2. A composition containing an alloy powder according to claim 1, wherein the silver (Ag) content relative to the total amount of the alloy powder is 15 to 97.6 mass%.
3. An alloy powder containing composition according to claim 1 or 2, wherein the content of the silver (Ag) powder is 5 to 2000 parts by mass per 100 parts by mass of the alloy powder.
4. A composition containing an alloy powder according to claim 1 or 2, wherein the silver content relative to the total amount of the alloy powder and the silver (Ag) powder is 20 to 99.9 mass%.
5. A composition containing alloy powder according to claim 1 or 2, wherein the volume average particle size (median diameter) of the alloy powder is 0.1 to 100 μm.
6. A semiconductor device using the alloy powder-containing composition described in claim 1 or 2 as a bonding layer for bonding a substrate and a workpiece.

Description

Alloy powder-containing composition and semiconductor device The present disclosure relates to a composition containing an alloy powder and a semiconductor device. In addition, the present application claims priority to Patent Application No. 2023-146496 filed in Japan on September 8, 2023, and incorporates the contents thereof herein by reference. Semiconductors used for power devices require high efficiency, low loss, and high-frequency switching, and the use of wide-gap semiconductors such as SiC and GaN is expanding. In these semiconductors, the operating temperature may exceed 200°C, and the bonding materials used for bonding needed to maintain high bonding reliability even during operation in the high-temperature region of the semiconductor or in harsh temperature cycle environments. In addition, solder has conventionally been used as a high-temperature bonding material, but due to stricter environmental regulations and safety concerns, lead-free materials have become necessary. As lead-free materials to replace such solder, for example, the materials of Patent Documents 1 to 3 have been known. Figure 1 is an SEM image of a cross-section of the alloy powder of the present disclosure. Figure 2 is an SEM image of a cross-section of the alloy powder of the present disclosure. FIG. 3 is a cross-sectional view schematically illustrating an example of an embodiment of a semiconductor device of the present disclosure. [Composition containing alloy powder] As an embodiment of the present disclosure, an alloy powder-containing composition comprising an alloy powder, silver (Ag) powder, and an organic material may be provided. Since the alloy powder is made of silver (Ag) and silicon (Si) as raw materials, it is compliant with environmental regulations. Furthermore, the alloy powder-containing composition may take various forms without being particularly limited. For example, an alloy powder-containing composition called an alloy ink can be produced by dispersing the alloy powder in a suspension state in a suitable organic solvent (dispersion medium). Alternatively, an alloy powder-containing composition called an alloy paste can be produced by dispersing the alloy powder in a kneaded state in an organic solvent. Among these, it is preferable that the alloy powder-containing composition be an alloy paste. The alloy powder-containing composition is preferably sinterable at a temperature of 150 to 300°C, more preferably 160 to 280°C, and even more preferably 200 to 270°C. Since the alloy powder-containing composition is sinterable at a temperature of 300°C or lower, it can be sintered at a low temperature, allowing the use of a substrate with a low melting point. The heating time during sintering of the above alloy powder-containing composition is preferably 0.5 minutes to 2 hours, and more preferably 10 minutes to 1 hour. Since the heating time is within 2 hours, it becomes possible to mount it in a short time, making it easier to reduce manufacturing costs. It is preferable that the alloy powder-containing composition be pressurized when heated. Specifically, it is preferable that it be pressurized under conditions of 0.75 to 50 MPa, and more preferably 1 to 40 MPa. In addition, it may be non-pressurized if it is appropriately sintered and bonded. Since the pressure during mounting is within the above range, mounting can be easily performed. The above alloy powder-containing composition preferably has a strength retention rate (%) of 50% or more, more preferably 60% or more, and even more preferably 70% or more. By having a strength retention rate of 50% or more, sufficient bonding reliability can be achieved. Additionally, although there is no particular upper limit, since the shear bonding strength may increase due to the thermal shock test described later, it is preferable that it be 150% or less, and more preferably 100% or less. In addition, the strength retention rate is calculated as the ratio of the shear bond strength measured under the same conditions after a thermal shock test in which the semiconductor device is heated and cooled a specific number of times within a range of -50 to 250°C, to the shear bond strength measured under room temperature conditions and a test speed of 50 μm/s using a die shear tester (product name "SERIES4000", manufactured by DAGE) for a semiconductor device manufactured under the conditions described in the examples below using the alloy powder-containing composition (shear bond strength after thermal shock test / shear bond strength before thermal shock test × 100). The coefficient of linear expansion measured by a thermomechanical analyzer (device name “TMA-60”, manufactured by Shimadzu Seisakusho Co., Ltd.) of the sintered body of the alloy powder-containing composition is preferably 17 or less, more preferably 13 or less, and even more preferably 11 or less. Since the coefficient of linear expansion is within the above range, it becomes easier to exhibit connection rel