KR-20260066775-A - Tabernacle apparatus and tabernacle method

Abstract

A film deposition apparatus for depositing a deposition material on a substrate adsorbed to an electrostatic chuck comprises a measuring device that measures the potential of the adsorption surface of the substrate adsorbed to the electrostatic chuck on a transport path before the substrate is adsorbed to the electrostatic chuck, and a control device that controls the film deposition process based on the measurement result of the measuring device.

Inventors

• 카와에 메구무

Assignees

• 캐논 톡키 가부시키가이샤

Dates

Publication Date

20260512

Application Date

20240917

Priority Date

20230921

Claims (14)

1. A film deposition device for depositing a deposition material on a substrate adsorbed to an electrostatic chuck, A measuring means for measuring the potential of the adsorption surface of the substrate adsorbed to the electrostatic chuck on the conveying path before the substrate is adsorbed to the electrostatic chuck, and A film forming device characterized by having a control means for controlling film forming treatment based on the measurement result of the above-mentioned measuring means.
2. A film forming device according to claim 1, wherein the control means controls the voltage applied to the electrostatic chuck based on the measurement result of the measuring means.
3. In claim 1 or 2, further comprising a static elimination means for static elimination on the adsorption surface of the substrate on the return path, and A membrane forming device characterized in that the above-mentioned control means controls the above-mentioned static elimination means based on the measurement result of the above-mentioned measuring means.
4. A film forming apparatus according to paragraph 3, wherein the antistatic means comprises an ionizer that irradiates ultraviolet light inducing ionization onto the adsorption surface of the substrate.
5. A film forming apparatus according to claim 3, wherein the static discharge means is characterized by contacting a part formed from a material having electrostatic diffusivity having a surface resistance of 1×10⁴Ω or more and less than 1×10¹¹Ω with the adsorption surface on the conveying path to static discharge the said adsorption surface.
6. A film forming apparatus according to claim 5, wherein the static discharge means is a part formed from the electrostatic diffusing material having a plurality of protrusion shapes or a part having a sheet shape having two-dimensional spreading, and contacts the adsorption surface on the conveying path to static discharge the said adsorption surface.
7. A film forming apparatus according to claim 5, wherein the antistatic means is a part formed from the electrostatic diffusing material and comprises a substrate support means that contacts the adsorption surface of the substrate when supporting the periphery of the substrate.
8. A film deposition apparatus according to claim 1, wherein the control means excludes the substrate on which the potential of the adsorption surface is measured from the target substrate for film deposition treatment when the potential of the adsorption surface measured by the measuring means exceeds an upper limit potential of a level at which film deposition treatment is possible.
9. A film deposition apparatus according to claim 1, further comprising an alignment means for adjusting the relative positions of the substrate and the mask based on the measurement results of alignment marks formed respectively on the substrate and the mask.
10. A film forming apparatus according to claim 9, wherein the alignment means adjusts the relative positions of the substrate and the mask adsorbed to the electrostatic chuck.
11. In claim 1, the film formation device is an upward deposition type film formation device, and The vertically upward side of the substrate is the adsorption surface, and the vertically downward side of the substrate is the film formation surface. A film deposition apparatus characterized by forming a thin film of a deposition material of a predetermined pattern on the film deposition surface of the substrate through a mask.
12. A film deposition device for depositing a deposition material on a substrate adsorbed to an electrostatic chuck, A measuring means for measuring the potential of the adsorption surface of the substrate adsorbed to the electrostatic chuck before the substrate is adsorbed to the electrostatic chuck, and A film forming device characterized by having a control means for controlling film forming treatment based on the measurement result of the above-mentioned measuring means.
13. As a film deposition method of a film deposition apparatus for depositing a deposition material on a substrate adsorbed to an electrostatic chuck, A measurement process for measuring the potential of the adsorption surface of the substrate adsorbed to the electrostatic chuck by means of a measuring means on a conveying path before the substrate is adsorbed to the electrostatic chuck, and A film deposition method characterized by having a control process that controls the film deposition treatment based on the measurement results of the above-mentioned measurement process.
14. As a film deposition method of a film deposition apparatus for depositing a deposition material on a substrate adsorbed to an electrostatic chuck, A measurement process for measuring the potential of the adsorption surface of the substrate adsorbed to the electrostatic chuck by means of a measuring means before the substrate contacts the electrostatic chuck, and A film deposition method characterized by having a control process that controls the film deposition process based on the measurement results of the above-mentioned measuring means.

Description

Tabernacle apparatus and tabernacle method The present invention relates to a film deposition apparatus and a film deposition method for depositing a film on a substrate. Patent Document 1 discloses a film deposition device that performs a film deposition treatment on a substrate adsorbed to an electrostatic chuck. This film deposition device detects a change in capacitance between the substrate and the electrostatic chuck and changes the applied voltage of the electrostatic chuck based on the detection information of the capacitance. Figure 1 is a schematic diagram of a part of an electronic device manufacturing line. FIG. 2 is a schematic diagram of a tabernacle device according to one embodiment. FIG. 3 is a drawing showing Example 1 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 4 is a drawing showing Example 2 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 5 is a drawing showing Example 3 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 6 is a drawing showing Example 4 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 7 is a drawing showing Example 5 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 8 is a drawing showing Example 6 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 9 is a drawing showing Example 7 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 10 is a drawing showing example 8 of the configuration of an antistatic device in a membrane device according to an embodiment. FIG. 11 is a diagram schematically showing the operation of the base portion and the substrate support portion (Configuration Example 8). FIG. 12 is a drawing showing an example of the arrangement of a measuring device (surface potentiometer) according to an embodiment. FIG. 13 is a diagram showing the flow of processing of a measuring device and a control device according to an embodiment. FIG. 14 is a diagram showing the flow of the overall processing by a membrane formation device according to an embodiment. Hereinafter, embodiments will be described in detail with reference to the attached drawings. Meanwhile, the following embodiments are not intended to limit the invention according to the claims. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined at will. Furthermore, in the attached drawings, the same reference number is assigned to identical or similar components, and redundant descriptions are omitted. Electronic device manufacturing line FIG. 1 is a schematic diagram showing a part of the configuration of a manufacturing line for an electronic device to which the film deposition device of the present invention is applicable. The manufacturing line of FIG. 1 is used, for example, to manufacture a display panel for an organic EL display device for a smartphone, in which a substrate (100) is sequentially conveyed to a film deposition block (301) and an organic EL element film is deposited on the substrate (100). In FIG. 1, arrow Z indicates the vertical direction (gravity direction), and arrows X and Y indicate horizontal directions that are orthogonal to each other. In addition, in each figure, G indicates ground. In the film block (301), a plurality of film chambers (303a to 303d) in which film treatment is performed on a substrate (100) are arranged around a return chamber (302) having an octagonal shape when viewed from a planar view, and a mask storage chamber (305) in which masks before and after use are stored. A return robot (302a) for returning the substrate (100) is arranged in the return chamber (302). The return robot (302a) includes a hand that holds and supports the substrate (100) and a multi-joint arm capable of moving the hand in a horizontal and vertical direction. In other words, the film block (301) is a cluster-type film unit in which a plurality of film chambers (303a to 303d) are arranged to surround the return robot (302a). Meanwhile, if the tabernacle rooms (303a~303d) are referred to collectively or are not distinguished, they are labeled as tabernacle room (303). In the conveying direction (arrow direction) of the substrate (100), a buffer room (306), a turning room (307), and a pass room (308) are respectively arranged on the upstream and downstream sides of the film-forming block (301). During the manufacturing process, each room is maintained in a vacuum state. Meanwhile, although only one film-forming block (301) is shown in FIG. 1, the manufacturing line according to the present embodiment has a plurality of film-forming blocks (301), and the plurality of film-forming blocks (301) are connected by a connecting d