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KR-20260066781-A - Substrate processing method and substrate processing device

KR20260066781AKR 20260066781 AKR20260066781 AKR 20260066781AKR-20260066781-A

Abstract

A substrate processing method and a substrate processing apparatus are provided for a substrate having a lower film having a concave portion formed therein, wherein a film containing silicon and/or germanium is formed within the concave portion. A substrate processing method for forming a film containing silicon and/or germanium within the concave portion of a substrate having a lower film having a concave portion formed therein, comprising: (a) a process of supplying a first film-forming gas containing silicon and/or germanium to the substrate; and (b) a process of simultaneously supplying a second film-forming gas containing silicon and/or germanium and a halogen-containing gas to the substrate, wherein the opening width of the concave portion at the start of the process (b) after the process (a) is 10 nm or less.

Inventors

  • 나카무라 마유코
  • 와타나베 마사히사
  • 고베쇼 사쿠라
  • 와가츠마 유이치로

Assignees

  • 도쿄엘렉트론가부시키가이샤

Dates

Publication Date
20260512
Application Date
20240830
Priority Date
20230920

Claims (9)

  1. A substrate treatment method for a substrate having a lower film having a concave portion formed therein, wherein a film containing at least one of silicon and germanium is formed within the concave portion. (a) a process of supplying a first film-forming gas containing at least one of silicon and germanium to the substrate, and (b) a process of simultaneously supplying a second film-forming gas containing at least one of silicon and germanium and a halogen-containing gas to the substrate, and A substrate processing method in which, after the above process (a), the opening width of the above concave portion at the time of initiating the above process (b) is 10 nm or less.
  2. In paragraph 1, In the above process (b), A substrate processing method in which the film formation rate at the top of the sidewall of the above-mentioned concave portion is within the range of -0.1 nm/min to +1.1 nm/min.
  3. In paragraph 2, The above process (a) is a process of forming a film containing at least one of first silicon and germanium to narrow the opening width of the concave portion, and The above (b) process is a substrate processing method in which a film containing at least one of a second silicon and germanium is embedded in the above-mentioned concave portion.
  4. In any one of paragraphs 1 through 3, The above membrane is, A substrate processing method having a plurality of the above-mentioned concave portions with different opening widths.
  5. In paragraph 4, A substrate processing method comprising: performing the above (a) process and the above (b) process as one cycle, repeating the cycle, and sequentially burying a film containing at least one of silicon and germanium starting from the concave portion with a narrow opening width.
  6. In paragraph 1, A substrate treatment method in which the above-mentioned lower film is a silicon oxide film.
  7. In paragraph 1, The first film-forming gas is any one of SiH₄ , Si₂H₆ , Si₃H₅ , Si₄H₁₀ , and SiH₂Cl₂ , or a mixture thereof , and The second film -forming gas is any one of SiH₄ , Si₂H₆ , Si₃H₅ , Si₄H₁₀ , and SiH₂Cl₂ , or a mixture thereof . A substrate treatment method in which the above halogen-containing gas is any one of Cl₂ , HBr, F₂ , and HI.
  8. In Paragraph 7, A substrate processing method in which the first film-forming gas and the second film-forming gas are the same gas.
  9. Processing container and, A substrate support member that supports a substrate within the above-mentioned processing vessel, and A gas supply unit that supplies gas into the above-mentioned processing vessel, and It is equipped with a control unit, and The above control unit is, (a) a process of supplying a first film-forming gas containing at least one of silicon and germanium to a substrate having a lower film having a concave portion formed therein, and (b) A process of simultaneously supplying a second film-forming gas containing at least one of silicon and germanium and a halogen-containing gas to the substrate is configured to be feasible, and A substrate processing apparatus in which, after the above process (a), the opening width of the above concave portion at the time of initiating the above process (b) is 10 nm or less.

Description

Substrate processing method and substrate processing device The present disclosure relates to a substrate processing method and a substrate processing apparatus. Patent Document 1 discloses a film formation method for forming a predetermined film on a body to be treated installed in a treatment vessel, comprising: a first film formation process in which a film is formed on the surface of the body to be treated by CVD while supplying a film formation gas into the treatment vessel; an etching process in which the film formed in the first film formation process is etched finely while supplying an etching gas into the treatment vessel; and a second film formation process in which a film is formed on the surface of the body to be treated by CVD while supplying the same film formation gas as in the first film formation process into the treatment vessel. Figure 1 is an example of a schematic diagram showing an example of the configuration of a substrate processing device. FIG. 2 is a flow chart showing an example of a substrate processing method related to the first embodiment. FIG. 3a is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the first embodiment. FIG. 3b is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the first embodiment. FIG. 3c is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the first embodiment. FIG. 4 is a flowchart showing an example of a substrate processing method related to a second embodiment. FIG. 5 is a flowchart showing an example of a substrate processing method related to the third embodiment. FIG. 6a is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6b is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6c is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6d is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6e is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6f is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6g is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. FIG. 6h is a schematic diagram showing an example of the state of the substrate surface at each process of the substrate processing method related to the third embodiment. Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to identical components, and redundant descriptions may be omitted. [Substrate Processing Device] A substrate processing apparatus (100) related to the present embodiment will be described using FIG. 1. FIG. 1 is an example of a schematic diagram showing an example of the configuration of a substrate processing apparatus (100). As shown in FIG. 1, the substrate processing device (100) has a processing container (1), a storage stand (2), a shower head (3), an exhaust unit (4), a gas supply mechanism (5), an RF power supply unit (8), and a control unit (9). The processing vessel (1) is made of a metal such as aluminum and has a roughly cylindrical shape. The processing vessel (1) accommodates a substrate (W). An inlet/outlet port (11) for bringing in or taking out the substrate (W) is formed on the side wall of the processing vessel (1), and the inlet/outlet port (11) is opened and closed by a gate valve (12). An annular exhaust duct (13) with a rectangular cross-section is installed on the main body of the processing vessel (1). A slit (13a) is formed along the inner surface of the exhaust duct (13). An exhaust port (13b) is formed on the outer wall of the exhaust duct (13). A ceiling wall (or ceiling wall) (14) is installed on the upper surface of the exhaust duct (13) to block the upper opening of the processing vessel (1) through an insulating member (16). The space between the exhaust duct (13) and the insulating member (16) is hermetically sealed with a seal ring (15). The partition member (17) divides the interior of the processing container (1) vertically when the mounting base (2) (and cover member (