KR-20260066819-A - AMPOULE FOR A SEMICONDUCTOR MANUFACTURING PRECURSOR

KR20260066819AKR 20260066819 AKR20260066819 AKR 20260066819AKR-20260066819-A

Abstract

Ampoules for semiconductor manufacturing precursors and methods of use are described. The ampoules comprise a vessel having an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity, and an outlet plenum located between the outlet port and the cavity. A flow path through which a carrier gas flows in contact with the precursor is defined by a plurality of tubular walls and inlet openings of the ampoules.

Inventors

화이트, 칼
버기즈, 모히스
마쿼트, 데이비드
로메로, 조세 알렉산드로

Assignees

어플라이드 머티어리얼스, 인코포레이티드

Dates

Publication Date: 20260512
Application Date: 20211203
Priority Date: 20201208

Claims (20)

As an ampoule for semiconductor manufacturing precursors, A container defining a cavity configured to hold the above-mentioned precursor; Inlet port and outlet port — both of the inlet port and the outlet port are fluidly connected to the cavity —; An inlet plenum located between the inlet port and the cavity; An outlet plenum located between the outlet port and the cavity — the outlet plenum is closer to the radial center of the vessel than the inlet plenum —; A plurality of elongate walls comprising said precursor, arranged to define flow channels including an outermost channel and an innermost channel — each of said elongate walls comprising an entry opening —; and A flow path defined by the inlet port, the flow channels, the entry openings, and the outlet port. Includes, Through the above flow path, a carrier gas flows in contact with the precursor, and the flow path is configured to flow from the outermost channel through the innermost channel to the outlet port. Ampoule for semiconductor manufacturing precursor.
In Article 1, The plurality of elongated walls and the entry openings define a labyrinth such that the flow path is winding, Ampoule for semiconductor manufacturing precursor.
In Article 1, The above entry openings are offset so that one entry opening does not overlap with another entry opening. Ampoule for semiconductor manufacturing precursor.
In Article 1, The above ampoule includes a single inlet and a single outlet, Ampoule for semiconductor manufacturing precursor.
In Article 1, A distribution element located between both the inlet plenum and the outlet plenum and the cavity, Ampoule for semiconductor manufacturing precursor.
In Article 1, Each of the above entry openings proceeds along the length of each slender wall such that the opening size increases from the lid-end edge of the slender wall to the lowest wall edge, Ampoule for semiconductor manufacturing precursor.
In Article 1, The above plurality of slender walls are effective in conducting heat from an external heat source, Ampoule for semiconductor manufacturing precursor.
In Article 1, The above fluid channels are nested, The above flow channels include a plurality of meandering passages and an outlet passage, wherein, in relation to the meandering passages, the flow through a first entry opening converts the carrier gas into a first part and a second part that flow in a first direction and a second direction, respectively, through a first section and a second section of the meandering passages. Ampoule for semiconductor manufacturing precursor.
As an ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing, A container having a bottom wall, side walls, and a cover — said container defines a cavity configured to hold said precursor, the height (H) of said cavity extending from the lower surface of said cover to the uppermost surface of said bottom wall —; A single inlet port and a single outlet port — both of the single inlet port and the single outlet port are fluidly connected to the cavity —; An inlet plenum located between the inlet port and the cavity; An outlet plenum located between the outlet port and the cavity — the outlet plenum is closer to the radial center of the vessel than the inlet plenum —; A plurality of elongate tubular walls comprising said precursor, arranged to define flow channels including an outermost channel and an innermost channel — each of said elongate walls includes an entry opening, and the entry openings are offset such that one entry opening does not overlap with another entry opening —; and A meandering flow path defined by the inlet port, the flow channels, the entry openings, and the outlet port Includes, Through the above flow path, a carrier gas flows in contact with the precursor, and the flow path is configured to flow from the outermost channel through the innermost channel to the outlet port. Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, A distribution element comprising a portion located between both the inlet plenum and the outlet plenum and the cavity, and extending over at least a certain distance of the inner diameter defined by the side walls, Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, Each of the above entry openings proceeds along the length of the slender wall such that the opening size increases from the cover-end edge of the slender wall to the lowest wall edge, Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, The above plurality of slender tubular walls are concentric circles, Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, The lowermost wall includes a plurality of grooves that align with the plurality of elongated tubular walls. Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, The length of the above flow path is effective for saturating the carrier gas by the above precursor, Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, The above plurality of slender tubular walls are effective in conducting heat from an external heat source, Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
In Article 9, The above fluid channels are nested, and The above flow channels include a plurality of meandering passages and an outlet passage, wherein, in relation to the meandering passages, the flow through a first entry opening converts the carrier gas into a first part and a second part that flow in a first direction and a second direction, respectively, through a first section and a second section of the meandering passages. Ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing.
As a method for providing a flow of a precursor, A step of flowing a carrier gas through the inlet port and inlet plenum of an ampoule having a low vapor pressure precursor inside; A step of directing the flow of the carrier gas to contact the precursor within the ampoule through a flow path defined by a plurality of elongated walls and entry openings of each of the elongated walls — through the flow path, the carrier gas flows in contact with the precursor, the plurality of elongated walls define an outermost channel and an innermost channel, and the carrier gas flows through the outermost channel to the innermost channel —; and A step of flowing the carrier gas and precursor outside the ampoule through the outlet plenum and outlet port. Includes, The outlet plenum is closer to the radial center of the ampoule than the inlet plenum, A method for providing flow of a precursor.
In Article 17, The length of the above flow path is effective for saturating the carrier gas by the above precursor, A method for providing flow of a precursor.
In Article 17, It further includes the step of independently heating the lid and the bottom wall of the above ampoule, and The above plurality of slender walls are effective in conducting heat from an external heat source, A method for providing flow of a precursor.
In Article 17, The above flow path includes nested passages, wherein the flow through the first entry opening converts the carrier gas into a first part and a second part that flow in a first direction and a second direction, respectively, through the first section and the second section of each of the nested passages. A method for providing flow of a precursor.

Description

Ampoule for a Semiconductor Manufacturing Precursor [0001] The present disclosure generally relates to ampoules for semiconductor manufacturing precursors and methods for using semiconductor manufacturing precursors. In particular, the present disclosure relates to ampoules and methods for providing a tortuous flow path for low vapor pressure precursors. [0002] The semiconductor industry is using increasingly diverse chemistry for chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, which are introduced in liquid or solid form. The precursor is typically inside a closed vessel or ampoule having a single inlet and a single outlet. [0003] Precursors with low vapor pressure often use a carrier gas to transport vapor from the ampoule to the process reactor. For these types of processes, typically two types of ampoules are used: a bubbler, in which the incoming carrier gas enters a tube submerged in the precursor; and a cross-flow ampoule, in which the carrier gas sweeps the headspace of the ampoule. Often, only a very short flow path exists for the carrier gas. The short flow path from the inlet to the outlet of the vessel does not allow for an adequate residence time within the vessel for the carrier gas to be fully saturated with the vaporized or sublimated precursor. Some conventional ampoule designs do not distribute the carrier gas evenly over the entire surface of the precursor. Some conventional ampoule designs fail to provide adequate heating of the precursor throughout the vessel. Many other solid source ampoules do not provide means to prevent precursor dust from moving downstream, where precursor dust interferes with control valve performance or causes on-wafer particle problems. [0004] In the industry, there is a need for ampoules, particularly cross-flow ampoules, that have a suitable flow path to saturate or nearly saturate a carrier gas with a precursor and provide a consistent delivery of the precursor, as well as methods for manufacturing and using them. [0005] One or more embodiments relate to an ampoule for semiconductor manufacturing precursors. The ampoule comprises a container defining a cavity configured to hold a precursor. Both an inlet port and an outlet port are in fluid communication with the cavity. The ampoule comprises: an inlet plenum located between the inlet port and the cavity, and an outlet plenum located between the outlet port and the cavity. A plurality of elongate walls contain the precursor, and the walls are arranged to define flow channels. Each of the elongate walls includes an entry opening. A flow path through which a carrier gas flows in contact with the precursor is defined by the flow channels and the entry openings. [0006] Additional embodiments of the present disclosure relate to an ampoule for dispensing a vapor mixture of a carrier gas and a low vapor pressure precursor used in semiconductor manufacturing. The ampoule comprises a vessel having a bottom wall, side walls, and a lid, the vessel defines a cavity configured to hold the precursor, such that the height (H) of the cavity extends from the lower surface of the lid to the upper surface of the bottom wall. Both a single inlet port and a single outlet port are in fluid communication with the cavity. The ampoule comprises: an inlet plenum located between the inlet port and the cavity, and an outlet plenum located between the outlet port and the cavity. A plurality of elongated tubular walls containing the precursor are provided, arranged to define flow channels, each of the elongated walls having an inlet opening, the inlet openings being offset such that one inlet opening does not overlap with another inlet opening. A meandering flow path defined by flow channels and entry openings is provided, in which a carrier gas flows in contact with a precursor. [0007] Additional embodiments of the present disclosure relate to methods for providing a flow of a precursor. The method comprises: a step of flowing a carrier gas through an inlet port and an inlet plenum of an ampoule having a low vapor pressure precursor inside. The flow of the carrier gas in contact with the precursor within the ampoule is directed through a flow path defined by a plurality of elongated walls and inlet openings of each of the elongated walls, through which the carrier gas flows in contact with the precursor. The carrier gas and the precursor flow out of the ampoule through an outlet plenum and an outlet port. [0008] In a way that the features of the present invention listed above can be understood in detail, a more specific description of the present invention, which has been briefly summarized above, may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of typical embodiments of the present invention and should not be construed as limiting the scope of the present invention, as th