KR-20260066866-A - Waste gas treatment device for semiconductor processes

Abstract

According to one aspect of the present invention, a waste gas treatment device for a semiconductor process capable of effective waste gas treatment by applying a selective wet process can be provided.

Inventors

• 천범호

Assignees

• 주식회사 오에이치엔지니어링

Dates

Publication Date

20260512

Application Date

20241105

Claims (4)

1. A first chamber comprising an inlet passage for introducing exhaust gas and an outlet passage for discharging cooled exhaust gas; A nitrogen supply line that selectively supplies nitrogen gas to the first chamber to cool the waste gas; A cooling water supply line that selectively supplies cooling water to the first chamber to cool the exhaust gas; A first tank connected to the above-mentioned outflow path for recovering captured dust; A second chamber provided on one side of the first tank, which selectively receives waste gas discharged from the first tank, and includes a nozzle provided to selectively spray treated water onto the waste gas received therein; A second tank connected to the second chamber and configured to receive treated water discharged from the second chamber; A dry air injection line configured to selectively inject dry air into the second chamber; and A waste gas treatment device comprising a discharge line for discharging gas processed in the second chamber to the outside.
2. In paragraph 1, The above-mentioned waste gas treatment device is, Water tank for holding cleaning water; A first water line configured to supply treated water from the above water tank to the above second tank; A second water line branched from the first water line and configured to supply treated water to the second chamber; A third water line branched from the second water line and configured to supply cooling water to the first chamber; and A waste gas treatment device further comprising a fourth water line configured to circulate treated water and cooling water from the second tank to the second water line and the third water line.
3. In paragraph 2, The above-mentioned waste gas treatment device is, A sludge discharge line configured to discharge sludge collected in the first tank to the outside; and A waste gas treatment device further comprising a sludge tank for receiving sludge discharged through the above-mentioned sludge discharge line.
4. In paragraph 3, The above-mentioned waste gas treatment device is, A first sensor configured to measure the amount of dust contained in the first tank; A first valve provided in the inlet path of the first chamber; A second valve provided in the above nitrogen supply line; A third valve provided in the above-mentioned sludge discharge line; A fourth valve provided in the above discharge line; A fifth valve provided in the above dry air injection line; A sixth valve provided in the second waterline above; A seventh valve provided in the first waterline above; A first pump provided on the above-mentioned sludge discharge line; A second pump provided on the third waterline above; and A waste gas treatment device further comprising a control unit electrically connected to the first sensor, the first to seventh valves, the first pump, and the second pump, and controlling the first to seventh valves, the first pump, and the second pump according to a signal from the first sensor.

Description

Waste gas treatment device for semiconductor processes The present invention relates to a device for treating waste gas generated in a semiconductor process, and more specifically, to a waste gas treatment device for a semiconductor process capable of effectively treating waste gas by selectively applying a wet process. Generally, semiconductor processes involve repeatedly performing various processes such as photolithography, diffusion, etching, chemical vapor deposition, and metal deposition on a silicon substrate. Among these processes, processes such as diffusion, etching, and chemical vapor deposition involve supplying process gases into a sealed process chamber to cause these process gases to react on the wafer. Meanwhile, gases used in semiconductor manufacturing processes have strong characteristics such as toxicity, flammability, and corrosiveness, and only about 10% of these process gases participate in the reaction during the manufacturing process, while the remaining 90% of the process gases are discharged from the manufacturing facility in an unreacted state. Therefore, if these stationary toxic waste gases are released directly into the atmosphere without a separate purification process, they will cause damage to surrounding manufacturing facilities, serious environmental pollution, and safety accidents for workers. Thus, a scrubber is installed in each manufacturing facility on the gas discharge line connected to the exhaust duct to decompose or purify the exhaust gas into a safe state. Scrubbers utilize the properties of exhaust gases, such as their explosive reaction upon contact with ordinary air, their combustibility, their reaction with gas treatment agents, and their solubility in water, and can be broadly classified into dry and wet scrubbers. Dry-type scrubbers are structured to either directly combust exhaust gas by passing it through a burner, or indirectly combust it by forming a high-temperature chamber using a heat source and passing the exhaust gas through it. While such dry-type scrubbers are highly effective for treating flammable gases, they are unsuitable for treating gases that do not combust easily, such as water-soluble gases. Wet scrubbers are structured to capture waste gas using water, followed by cleaning and cooling. They have a relatively simple configuration, are easy to manufacture, and have the advantage of being able to be scaled up to a large capacity. However, depending on the gas components contained in the emitted waste gas, there are cases where the use of water is unnecessary, yet no realistic alternative has been presented for waste gas treatment devices that can selectively apply the wet method. FIG. 1 is a schematic diagram illustrating the configuration of a waste gas treatment device according to one aspect of the present invention. Hereinafter, preferred embodiments of a waste gas treatment device according to one aspect of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the embodiments described below. These embodiments are provided to further explain the present invention in detail to those skilled in the art to which the invention pertains. Accordingly, the shape of each element shown in the drawings may be emphasized or exaggerated for clearer explanation. Hereinafter, a waste gas treatment device according to one aspect of the present invention will be described in more detail with reference to FIG. 1. As illustrated in FIG. 1, a waste gas treatment device (1) according to one aspect of the present invention may include a first chamber (10) connected to a waste gas collection tank (A) through an inlet (51). Waste gas collected in the waste gas collection tank (A) may be introduced into the first chamber (10) through the inlet (51), and the inlet (51) may be directly connected to a semiconductor process device so that waste gas generated from the semiconductor process device is introduced into the first chamber (10) through the inlet (51). A first valve (V1) for controlling the amount of waste gas moving through the inlet (51) may be provided on the inlet (51). The first tank (30) is provided at the bottom of the first chamber (10), and the outlet (52) may be formed to extend from the first chamber (10) toward the first tank (30). Waste gas that has entered the first chamber (10) can move to the first tank (30) through the outlet (52). A nitrogen supply line (53) may be provided to connect the nitrogen gas tank (B) and the outlet (52), and a second valve (V2) may be provided on the nitrogen supply line (53) to control the amount of nitrogen gas moving through the nitrogen supply line (53). It is preferable that the outlet (52) be provided as a double pipe or a triple pipe, and waste gas discharged from the first chamber (10) can move to the f