Search

KR-20260066961-A - Plasma processing apparatus

KR20260066961AKR 20260066961 AKR20260066961 AKR 20260066961AKR-20260066961-A

Abstract

A plasma treatment device is provided. The plasma treatment device comprises: a chamber in which a target object treatment space is formed for treating a target object; and a photocatalyst that is activated by plasma light emitted from the plasma and acts to generate radicals for treating the target object, wherein the plasma is generated in the target object treatment space, and the photocatalyst may be disposed on a surface exposed to the plasma of the configuration of the chamber forming the target object treatment space or on at least a portion of the surface exposed to the plasma of the configuration disposed in the chamber.

Inventors

  • 왕윤선
  • 성덕용
  • 구본승
  • 김병상

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260512
Application Date
20241105

Claims (10)

  1. A chamber in which a workpiece processing space is formed for processing a workpiece; and It includes a photocatalyst that is activated by plasma light emitted from the plasma and acts to generate radicals for the treatment of the object to be treated, and The above plasma is generated in the object processing space, and A plasma treatment device wherein the above photocatalyst is disposed on at least a portion of the plasma-exposed surface of the configuration of the chamber forming the object treatment space or the plasma-exposed surface of the configuration disposed in the chamber.
  2. In Article 1, A plasma treatment device in which the above photocatalyst is activated by ultraviolet rays included in the plasma light.
  3. In Article 1, A plasma processing apparatus comprising one or more of the photocatalyst, copper oxide ( Cu₂O ) , indium oxide ( In₂O₃ ), titanium lanthanum oxide ( LaTi₂O₇ ), iron oxide ( CaFe₂O₄ ), titanium bismuth oxide ( Bi₄Ti₃O₁₂ ), titanium barium oxide ( BaTiO₃ ) , carbon nitride ( C₃N₄ ), tantalum nitride ( Ta₃N₅ ), tin sulfide ( SnS₂ ), zinc selenide ( ZnSe ), cerium sulfide ( Ce₂S₃ ), indium sulfide ( In₂S₃ ), antimony sulfide ( Sb₂S₃ ) , zinc sulfide ( ZnS ), cadmium telluride (CdTe), and antimony selenide ( Sb₂Se₃ ).
  4. A chamber in which a processing space is formed for processing a workpiece; A plasma generation unit having a plasma generation space formed therein that communicates with the above-mentioned object processing space and generates plasma; and It includes a photocatalyst that is activated by plasma light emitted from the above plasma and acts to generate radicals for the treatment of the above-mentioned object, and A plasma treatment device wherein the above photocatalyst is disposed on at least a portion of the plasma-exposed surface of the configuration of the plasma generation unit forming the plasma generation space or on the plasma-exposed surface of the configuration disposed in the plasma generation unit.
  5. In Paragraph 4, The above plasma generation unit is a plasma processing device disposed in the above chamber.
  6. A plasma processing apparatus according to claim 5, further comprising a gas distribution unit disposed in the plasma generation unit to supply gas to the plasma generation space.
  7. In Paragraph 4, A plasma processing device in which the above plasma generation unit is connected to the chamber by a target material supply pipe.
  8. In Paragraph 4, A plasma treatment apparatus further comprising a target material distribution unit disposed in the chamber to supply a target material containing the above radical to the target material treatment space.
  9. In Paragraph 4, A plasma treatment device in which the above photocatalyst is activated by ultraviolet rays included in the plasma light.
  10. In Paragraph 4, A plasma processing apparatus comprising one or more of the photocatalyst, copper oxide ( Cu₂O ) , indium oxide ( In₂O₃ ), titanium lanthanum oxide ( LaTi₂O₇ ), iron oxide ( CaFe₂O₄ ), titanium bismuth oxide ( Bi₄Ti₃O₁₂ ), titanium barium oxide ( BaTiO₃ ) , carbon nitride ( C₃N₄ ), tantalum nitride ( Ta₃N₅ ), tin sulfide ( SnS₂ ), zinc selenide ( ZnSe ), cerium sulfide ( Ce₂S₃ ), indium sulfide ( In₂S₃ ), antimony sulfide ( Sb₂S₃ ) , zinc sulfide ( ZnS ), cadmium telluride (CdTe), and antimony selenide ( Sb₂Se₃ ).

Description

Plasma processing apparatus The present invention relates to a plasma processing apparatus. For the manufacture of semiconductor devices or displays, substrates such as wafers are processed in a plasma processing unit. The substrate is etched or deposited in the plasma processing unit. The plasma processing unit generates plasma, and the substrate is etched or deposited by radicals, neutral species, or ions contained in the generated plasma. A gas containing various components for plasma generation and substrate processing is supplied to the plasma processing device. Additionally, in the plasma processing device, electrical energy from a power source is supplied to the gas, causing the gas to ionize and generate plasma. Since the radicals contained in the plasma are highly reactive, a high density of radicals within the plasma can increase the etching or deposition efficiency of the substrate. Meanwhile, radicals contained in the plasma may disappear or have their lifetime reduced due to recombination or polymerization. In other words, the density and lifetime of radicals in the plasma may decrease. When the density and lifetime of radicals within the plasma decrease in this way, the etching and deposition efficiency of the substrate is lowered, and process control becomes difficult due to byproducts generated by unwanted reactions. To prevent a decrease in the density and lifetime of radicals within the plasma, relatively high electrical energy must be supplied. Furthermore, if the types of radicals contained in the plasma are diverse, they can induce unwanted reactions, reducing etching accuracy and making it difficult to control the characteristics of the film formed by deposition. FIG. 1 is a drawing showing a plasma processing apparatus according to some embodiments of the present invention. Figure 2 is a diagram showing the operation of the plasma processing apparatus of Figure 1. Figure 3 is a diagram showing that a photocatalyst is activated by plasma light and radicals are generated by the activated photocatalyst. FIG. 4 is a drawing showing a plasma processing apparatus according to some embodiments of the present invention. Figure 5 is a diagram showing the operation of the plasma processing device of Figure 4. FIG. 6 is a drawing showing a plasma processing apparatus according to some embodiments of the present invention. Figure 7 is a diagram showing the operation of the plasma processing apparatus of Figure 6. Embodiments of the present invention will be described in detail below with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted. FIG. 1 is a drawing showing a plasma processing apparatus according to some embodiment of the present invention, and FIG. 2 is a drawing showing the operation of the plasma processing apparatus of FIG. 1. Referring to FIGS. 1 and 2, a plasma processing device (100) can generate plasma (PL) and process a target object (W) by radicals, neutral species, or ions contained in the plasma (PL). For example, the target object (W) may be a substrate such as a wafer. Additionally, the plasma processing device (100) can generate plasma (PL) and etch or deposit the target object (W), such as a wafer, by means of a target object processing material such as radicals contained in the plasma (PL). The plasma processing device (100) includes a chamber (200), a target object support unit (300), a gas distribution unit (400), an antenna (500), and a photocatalyst (600), etc. The chamber (200) can provide an environment in which a workpiece (W) can be treated by a workpiece treatment material, such as radicals contained in plasma (PL). A workpiece treatment space (PT) may be formed in the chamber (200). A workpiece (W) may be placed in the workpiece treatment space (PT). As described below, a workpiece support unit (300) that supports the workpiece (W) may be placed in the workpiece treatment space (PT), so that the workpiece (W) may be placed in the workpiece treatment space (PT). Plasma (PL) may be generated in the workpiece treatment space (PT). Additionally, the workpiece (W) placed in the workpiece treatment space (PT) may be treated by a workpiece treatment material, such as radicals contained in the plasma (PL) generated in the workpiece treatment space (PT). The chamber (200) may be configured such that the object processing space (SP) is sealed and becomes a vacuum. Additionally, the chamber (200) may include a gate not shown, through which the object to be processed (W) may be introduced into the object processing space (PT) or withdrawn from the object processing space (PT). The chamber (200) may be formed with multiple components for the formation of the object processing space (PT), the generation of plasma (PL), and the processing of the object to be processed (W). Furthermore, a gas distribution unit (400), etc., may be disposed in the chamber (200) for th