KR-20260066986-A - Forming method for carbon containing film

Abstract

A method for forming a carbon-containing film according to an embodiment of the present invention may include the step of forming an amorphous film on a substrate by injecting a carbon-containing gas into the interior of a chamber in which a substrate is contained, and the step of crystallizing the amorphous film while doping nitrogen into the amorphous film by forming a plasma while injecting a nitrogen-containing gas into the interior of the chamber. Accordingly, according to the embodiments of the present invention, a crystalline carbon-containing film can be easily formed at a low temperature. Accordingly, when forming a crystalline carbon-containing film, damage to at least one of the substrate and the underlying film by high-temperature heat can be suppressed or prevented. In addition, it can fill defects formed in the crystalline carbon-containing film. Therefore, it has the effect of improving the properties of the carbon-containing film. Furthermore, in crystallizing the carbon-containing film, it can facilitate nucleation and improve the growth rate.

Inventors

• 원경훈
• 서준원
• 류종원
• 신주한
• 송민진
• 황철주

Assignees

• 주성엔지니어링(주)

Dates

Publication Date

20260512

Application Date

20241105

Claims (5)

1. A method for forming a carbon-containing film inside a chamber containing a substrate, A step of injecting a carbon-containing gas into the interior of the chamber; and A method for forming a carbon-containing film comprising the step of forming a direct plasma inside the chamber.
2. In claim 1, The step of forming the above direct plasma is, A method for forming a carbon-containing film by forming a plasma using a nitrogen-containing gas.
3. In claim 2, The step of forming the above direct plasma is, A method for forming a carbon-containing film by further using a gas comprising one or more of argon (Ar), helium (He) and hydrogen (H) to form a plasma.
4. A method for forming a carbon-containing film inside a chamber containing a substrate, A step of injecting carbon-containing gas into the interior of the chamber; A step of forming a direct plasma using a gas containing one or more of argon (Ar), helium (He) and hydrogen (H) inside the chamber; and A method for forming a carbon-containing film comprising the step of forming a direct plasma using a nitrogen-containing gas inside the chamber.
5. A method for forming a carbon-containing film inside a chamber containing a substrate, A step of injecting carbon-containing gas into the interior of the chamber; A step of forming a direct plasma using a nitrogen-containing gas inside the chamber; and A method for forming a carbon-containing film comprising the step of forming a direct plasma using a gas containing one or more of argon (Ar), helium (He), and hydrogen (H) inside the chamber.

Description

Forming method for carbon containing film The present invention relates to a method for forming a carbon-containing film, and more specifically, to a method for forming a carbon-containing film capable of forming a crystalline carbon-containing film at a low temperature. Generally, a crystalline carbon-containing film (hereinafter referred to as a graphene film) is formed using a transfer process. To explain this, first, a catalytic metal film is deposited on a copper (Cu) substrate, and graphene is synthesized on the catalytic metal film. Thus, a graphene film is formed on the catalytic metal film. However, in order to apply the graphene film to a desired device, the graphene film must be separated from the catalytic metal film and transferred onto a PMMA (Poly(methyl methacrylate) film. However, during the transfer process, the graphene film may be contaminated by organic materials contained in the PMMA film, and damage such as tearing or folding may occur during the transfer process. To solve the problems caused by such transfer processes, a graphene film is formed using a method that omits the transfer process. To explain this, a catalytic metal film is first formed on a substrate using a deposition method. Then, after patterning the catalytic metal film, graphene is synthesized, and a graphene film is formed on the catalytic metal film. However, graphene synthesis is carried out at high temperatures of 900°C to 1000°C. Consequently, there is a problem in that the underlying film of the graphene film or the substrate is damaged by the high heat. In addition, there is a limitation that only a silicon substrate (e.g., a Si wafer) can be used as the substrate to reduce damage caused by high heat during graphene synthesis. FIG. 1 is a diagram illustrating a state in which a carbon-containing film is formed on a substrate by a method according to the first embodiment of the present invention. Figures 2(a) and 2(b) are conceptual process diagrams illustrating a method for forming a carbon-containing film on a substrate according to the first embodiment of the present invention. FIG. 3 is a conceptual diagram illustrating a method for forming a carbon-containing film according to the first embodiment of the present invention. Figures 4 (a) to (c) are conceptual process diagrams illustrating a method of forming a carbon-containing film on a substrate according to a second embodiment of the present invention. FIG. 5 is a conceptual diagram illustrating a method for forming a carbon-containing film according to a second embodiment of the present invention. FIG. 6 is a diagram illustrating a state in which a carbon-containing film is formed on a substrate by a method according to the third embodiment of the present invention. FIGS. 7 (a) to (d) is a conceptual process diagram illustrating a method for forming a carbon-containing film on a substrate according to the third embodiment of the present invention. FIG. 8 is a conceptual diagram illustrating a method for forming a carbon-containing film according to the third embodiment of the present invention. FIG. 9 is a diagram illustrating a state in which a carbon-containing film is formed on a substrate by a method according to the fourth embodiment of the present invention. FIG. 10 is a conceptual diagram illustrating a method for forming a carbon-containing film according to a third embodiment of the present invention. Figure 11 is a diagram showing a thin-film transistor. Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms; these embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. The drawings may be exaggerated to illustrate the embodiments of the present invention. FIG. 1 is a diagram illustrating a state in which a carbon-containing film is formed on a substrate by a method according to the first embodiment of the present invention. A carbon-containing film (20) can be formed on a substrate (10). The substrate (10) may be either glass or a wafer. The wafer may be any one of a glass wafer, a silicon wafer (Si wafer), a silicon oxide wafer (SiO wafer), or a silicon nitride wafer (SiN wafer). Here, the silicon oxide wafer (SiO wafer) may be a silicon wafer having a silicon oxide film formed on at least one surface, and the silicon nitride wafer (SiN wafer) may be a silicon wafer having a silicon nitride film formed on at least one surface. The carbon-containing film (20) may be a film containing carbon (C) and nitrogen (N), and may be a crystalline film. That is, the carbon-containing film (20) may be a graphene film doped with nitrogen (N). The carbon-containing film (20) described above can be used, for example, as a channel layer of a thin