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KR-20260067040-A - Atomic layer infiltration apparatus and method for forming a thin film using the same

KR20260067040AKR 20260067040 AKR20260067040 AKR 20260067040AKR-20260067040-A

Abstract

An atomic layer penetration device is provided. The atomic layer penetration device comprises: a lower chamber having a receiving space formed therein for placing a target and an outlet formed on one side so that the receiving space communicates with the outside; an upper chamber connected to a first source supply channel and a second source supply channel to receive a first source and a second source, and coupled to the lower chamber to seal the receiving space of the lower chamber; and an exhaust pump connected to the outlet of the lower chamber to discharge substances within the receiving space to the outside of the lower chamber, wherein the first source and the second source supplied to the upper chamber are supplied to one side of the target and then discharged to the other side of the target by the exhaust pump, so that the first source and the second source penetrate into the interior of the target.

Inventors

  • 변창우
  • 신석윤
  • 김희수

Assignees

  • 재단법인차세대융합기술연구원

Dates

Publication Date
20260512
Application Date
20241105

Claims (12)

  1. A lower chamber having a receiving space formed inside for placing a target, and an outlet formed on one side so that the receiving space communicates with the outside; An upper chamber connected to a first source supply channel and a second source supply channel to receive the first source and the second source, and coupled to the lower chamber to seal the receiving space of the lower chamber; and It includes a discharge pump connected to the discharge port of the lower chamber to discharge materials within the receiving space to the outside of the lower chamber, An atomic layer penetration device comprising the first source and the second source supplied to the upper chamber being supplied to one side of the target and then discharged to the other side of the target by the discharge pump, thereby allowing the first source and the second source to penetrate into the interior of the target.
  2. In Article 1, The upper chamber includes a shower head comprising a plurality of nozzles, wherein An atomic layer penetration device comprising the first source supplied to the upper chamber through the first source supply channel being supplied onto the one surface of the target disposed within the receiving space through the plurality of nozzles included in the shower head.
  3. In Article 2, The upper chamber further comprises a flow path forming body including a plurality of through holes, wherein The shower head and the flow channel forming body are coupled such that the nozzle of the shower head is inserted into the through hole of the flow channel forming body, and An atomic layer penetration device comprising a channel formed between the nozzle and the through hole so that the second source supplied to the upper chamber through the second source supply channel is supplied onto the one surface of the target disposed within the receiving space as the nozzle is inserted into the through hole.
  4. In Paragraph 3, A space is formed between the outer wall of the nozzle and the inner wall of the through hole, An atomic layer penetration device comprising the second source supplied to the upper chamber through the second source supply channel being supplied onto the one surface of the target disposed within the receiving space through the space formed between the outer wall of the nozzle and the inner wall of the through hole.
  5. In Article 1, The above target is an atomic layer penetration device comprising having a porous structure.
  6. In Article 1, An atomic layer penetration device comprising the above target being disposed within the receiving space while being placed on a support having a mesh structure.
  7. In Article 1, An atomic layer penetration device in which the first source comprises a precursor containing a metal, and the second source comprises a reactant containing oxygen.
  8. In Article 7, The above target has a porous structure, but, An atomic layer penetration device comprising a metal oxide formed by the reaction of the first source and the second source, which is deposited up to the inner surface of the pores of the target.
  9. Step of preparing a target having a porous structure; A step of supplying a first source from one side of the target and inhaling the first source that has passed through the target from the other side of the target to infiltrate the first source into the target; and The method includes the step of supplying a second source from one side of the target and inhaling the second source that has passed through the target from the other side of the target to infiltrate the second source into the target. A method for forming a thin film comprising forming a material film in which the first source and the second source are reacted on the target, wherein the material film is formed up to the inner surface of the pores of the target.
  10. In Article 9, The step of infiltrating the first source into the above target is, A first source dosing step of opening a first source supply channel for supplying the first source and operating an exhaust pump for inhaling the first source to supply the first source onto the target; A first infiltration step of closing the first source supply path and stopping the operation of the discharge pump to infiltrate the first source into the target; and A thin film forming method comprising a first purge step of closing the first source supply path and operating the discharge pump to remove unreacted material remaining on the target.
  11. In Article 10, The step of infiltrating the second source into the above target is, A second source dosing step of opening a second source supply channel for supplying the second source and operating the discharge pump for inhaling the second source to supply the second source onto the target; A second infiltration step of closing the second source supply path and stopping the operation of the discharge pump to infiltrate the second source into the target; and A thin film forming method comprising a second purge step of closing the second source supply path and operating the discharge pump to remove unreacted material remaining on the target.
  12. In Article 11, The first source dosing step, the first infiltration step, and the first purge step are defined as a first unit process, and The second source dosing step, the second infiltration step, and the second purge step are defined as a second unit process, wherein A thin film formation method comprising the first unit process and the second unit process each being repeated a plurality of times.

Description

Atomic layer infiltration apparatus and method for forming a thin film using the same The present invention relates to an atomic layer penetration device and a thin film formation method using the same. Atomic Layer Deposition (ALD) is a method for growing thin films by alternately injecting metal-containing precursors and reactants. Since it uses a stacking method to form a film by stacking atomic layers one by one, it can easily form thin films at the nanometer level. However, when forming a thin film on a target such as a porous structure using atomic layer deposition, there is a problem in that the thin film is not formed evenly inside the pores because the precursors and reactants do not penetrate evenly into the pores. FIG. 1 is a perspective view of an atomic layer penetration device according to an embodiment of the present invention. FIG. 2 is a drawing illustrating the state in which the upper chamber and the lower chamber of an atomic layer penetration device are separated according to an embodiment of the present invention. FIG. 3 is a drawing for explaining the lower chamber and target of an atomic layer penetration device according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of a target placed in the lower chamber of an atomic layer penetration device according to an embodiment of the present invention. FIG. 5 is a drawing for explaining the upper chamber of an atomic layer penetration device according to an embodiment of the present invention. FIG. 6 is a drawing for explaining the shower head and flow path forming body included in the upper chamber of an atomic layer penetration device according to an embodiment of the present invention. FIG. 7 is a cross-sectional view of the upper chamber of an atomic layer penetration device according to an embodiment of the present invention. FIG. 8 is a drawing for explaining the combination of a shower head and a flow path forming body according to an embodiment of the present invention. FIGS. 9 to 11 are drawings for explaining the flow of a first source and a second source within an atomic layer penetration device according to an embodiment of the present invention. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to ensure that the concept of the present invention is sufficiently conveyed to those skilled in the art. Additionally, although terms such as first, second, third, etc., have been used to describe various components in the various embodiments of this specification, these components should not be limited by such terms. These terms are used merely to distinguish one component from another. Accordingly, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. Furthermore, in this specification, "and/or" is used to mean including at least one of the components listed before and after it. In the specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, components, or combinations thereof described in the specification, and should not be understood as excluding the existence or addition of one or more other features, numbers, steps, components, or combinations thereof. Additionally, in the following description of the invention, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description will be omitted. FIG. 1 is a perspective view of an atomic layer penetration device according to an embodiment of the present invention, FIG. 2 is a drawing for explaining the state in which the upper chamber and the lower chamber of the atomic layer penetration device according to an embodiment of the present invention are separated, FIG. 3 is a drawing for explaining the lower chamber and the target of the atomic layer penetration device according to an embodiment of the present invention, FIG. 4 is a cross-sectional view of the state in which the target is placed in the lower chamber of the atomic layer penetration device according to an embodiment of the present invention, FIG. 5 is a drawing for explaining the upper chamber of the atomic layer penetration device according to an embodiment of the present invention, FIG. 6 is a drawing for explaining the shower head and the flow path forming body included in the upper chamber of the atomic lay