KR-20260067182-A - SUBSTRATE PROCESSING APPARATUS

Abstract

A substrate processing device comprises a chamber, a chuck provided in a lower space of the chamber and configured to receive a substrate, a plasma electrode provided in an upper space of the chamber and vertically spaced from the chuck, a target provided on a lower surface of the plasma electrode, and a collimator disposed between the chuck and the target, wherein the collimator comprises a body defining a plurality of holes, and a source diffusion barrier provided on the surface of the body and formed of a conductive material.

Inventors

• 마영태
• 노영석
• 서종덕

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260512

Application Date

20241105

Claims (10)

1. Chamber; A chuck provided in the lower space of the chamber and configured to accommodate a substrate; A plasma electrode provided in the upper space of the chamber and vertically spaced from the chuck; A target provided on the lower surface of the above plasma electrode; and It includes a collimator disposed between the chuck and the target, The above collimator is: A body defining multiple holes; and A substrate processing device comprising a source diffusion barrier film formed of a conductive material, provided on the surface of the above body.
2. In Article 1, The above source diffusion barrier comprises a substrate processing apparatus including tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), or a combination thereof.
3. In Article 1, The above target is a substrate processing device containing copper (Cu).
4. In Article 1, A substrate processing apparatus in which the thickness of the source diffusion barrier film is 100 Å to 5500 Å.
5. In Article 1, A substrate processing apparatus further comprising a bias control unit electrically connected to the collimator and configured to apply a negative bias voltage to the source diffusion barrier and the body.
6. Chamber; A chuck provided in the lower space of the chamber and configured to accommodate a substrate; A plasma electrode provided in the upper space of the chamber and vertically spaced from the chuck; A target provided on the lower surface of the above plasma electrode; and It includes a collimator disposed between the chuck and the target, The above collimator is: A body defining multiple holes; and Provided on the surface of the above body and comprising a source diffusion barrier formed of an insulating material, A substrate processing apparatus in which the thickness of the source diffusion barrier film is 100 Å to 5500 Å.
7. In Article 6, The above source diffusion barrier is a substrate processing device comprising a metal oxide, a metal sulfide, a metal nitride, a metal fluoride, or a combination thereof.
8. In Article 7, The above body includes aluminum (Al), and The above source diffusion barrier is a substrate processing device comprising aluminum oxide ( Al₂O₃ ).
9. In Article 6, The above source diffusion barrier is a substrate processing device formed using an ion implantation method that implants impurity ions into the body.
10. A chamber having an internal space; A chuck provided within the lower region of the internal space of the chamber; A plasma electrode provided within the upper region of the internal space of the chamber and provided over the chuck; A target mounted on the lower surface of the above plasma electrode and comprising copper (Cu); A support installed in the middle area of the internal space of the chamber; It includes a collimator mounted on the support and provided between the chuck and the target, The above collimator is: A body comprising aluminum (Al) and defining a plurality of holes; and A substrate processing device comprising a copper diffusion barrier film formed on the surface of the above body.

Description

Substrate Processing Apparatus This application relates to a substrate processing apparatus. Semiconductor devices can be manufactured using various semiconductor manufacturing processes. As one of these semiconductor manufacturing processes, a deposition process of a semiconductor substrate may be performed. The deposition process is a process of forming a thin film on the surface of a semiconductor substrate using physical and/or chemical methods. Deposition processes include Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Atomic Layer Deposition (ALD) methods. Meanwhile, as semiconductor devices become more highly integrated and miniaturized, more precise film deposition methods are required. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present application. FIG. 2 is a perspective view of a collimator according to one embodiment of the present application. FIG. 3 is a plan view of a collimator according to one embodiment of the present application. Figure 4 is a cross-sectional view taken along the line A-A' of Figure 3. Figure 5 is an enlarged view of the X area of Figure 3. Figure 6 is an enlarged view of the Y region of Figure 4. Figure 7 is an impurity concentration graph corresponding to the A-A' line in Figure 6. FIGS. 8a and 8b are enlarged views of a portion of a collimator according to one embodiment of the present application, corresponding to the Y region of FIG. 4. Hereinafter, embodiments of the present application will be described in more detail with reference to the attached drawings. A substrate processing device may be a facility that performs various processes necessary to make high-performance semiconductor chips on a semiconductor substrate. The substrate processing device may be, for example, a photolithography device, an etching device, an ion implantation device, an oxidation device, a chemical mechanical polishing device, a substrate bonding device, or a deposition device. A substrate processing device according to one embodiment of the present application may be a deposition device for performing a deposition process on a substrate. More specifically, the substrate processing device may be a physical vapor deposition (PVD) device for performing a physical vapor deposition process on a substrate. A physical vapor deposition device may be a device for forming a thin film by condensing a solid material on the surface of a substrate through physical methods such as sputtering or evaporation. Here, the substrate may include a semiconductor substrate made of a semiconductor material, as well as an SOI (Silicon on Insulator) substrate, a metal substrate, a glass substrate, a plastic substrate, etc. The semiconductor substrate may be, for example, a silicon substrate, a germanium substrate, or a silicon-germanium substrate. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present application. Referring to FIG. 1, a substrate processing apparatus (10) according to one embodiment of the present application may include a chamber (100), a chuck (510), a plasma electrode (400), a target (200), and a collimator (300). The chamber (100) may provide a process space for a substrate processing device (10). Here, the process space may be an internal space of the chamber (100). That is, a substrate processing process through the substrate processing device (10) may be performed in the internal space of the chamber (100). For example, the substrate processing device (10) may perform a physical vapor deposition (PVD) process in the internal space of the chamber (100). The internal space may be separated from the external space by the chamber (100). The chamber (100) may have a cylindrical shape. However, this is exemplary, and the chamber (100) may be implemented in various shapes. The internal space of the chamber (100) may be substantially a vacuum space. The internal space of the chamber (100) may have a pressure of, for example, about 1 x 10⁻⁸ Torr to about 1 x 10⁻⁴ Torr. The chamber (100) may include a bottom portion (100a), a wall portion (100b) extending upward from the edge of the bottom portion (100b), and a ceiling portion (100c) provided on the top of the wall portion. The internal space of the chamber (100) may be a space enclosed by the bottom portion (100a), the wall portion (100b), and the ceiling portion (100c). More specifically, the bottom portion (100a) of the chamber (100) may be a portion covering the lower surface of the interior space of the chamber (100), and the wall portion (100b) may be a portion extending from the edge of the bottom portion (100a) in a third direction (D3) perpendicular to the first and second directions (D1, D2), thereby vertically surrounding the interior space of the chamber (100). The ceiling portion (100c) may be a portion facing the bottom portion (100a) of the chamber (100), thereby covering the upper surface of the