KR-20260067187-A - PRECISION MACHINED SEMICONDUCTOR SHOWERHEAD

Abstract

According to the present invention, a precision-machined showerhead eliminates the straightness of the gas flowing into the space inside the showerhead through the gas supply port, thereby enabling the process gas to be supplied at a desired rate across the entire substrate, which can improve the uniformity of the process.

Inventors

• 한상욱

Assignees

• 주식회사 다원라이즈

Dates

Publication Date

20260512

Application Date

20241105

Claims (2)

1. As a semiconductor showerhead, A chamber having a plurality of stations provided with substrates; substrate supports disposed within the stations for housing the substrates; and It includes a lower showerhead positioned below the above-mentioned substrate supports, The lower showerheads above include: an isotropic showerhead having first nozzles that isotropically provide a first reaction gas to the lower surface of the substrate; and Striped nozzle regions having second nozzle holes that anisotropically provide a second reaction gas to the lower surface of the substrate, and A striped showerhead comprising striped blank regions between the striped nozzle regions. Precision machined semiconductor showerhead.
2. In Article 1, The above lower showerhead includes a reactive gas showerhead and a purging gas showerhead, and The above reaction gas showerhead has an upper plate and a bottom plate, and is equipped with a plurality of reaction gas injection tubes extending downward from the bottom plate, and The above-described purge gas showerhead is equipped with a side wall and is positioned below the reaction gas showerhead module, and is a precision-machined semiconductor showerhead through which the reaction gas injection tube can pass while maintaining airtightness.

Description

Precision Machined Semiconductor Showerhead The present invention relates to a showerhead for semiconductor processes, and more specifically, to a precision-machined semiconductor showerhead that can improve the uniformity of a thin film formed on a semiconductor wafer by precisely machining the size and depth of each gas injection hole through a high-precision metal processing process. As the high integration of semiconductor devices progresses, the need to control process conditions and environments more precisely in semiconductor manufacturing is increasing. In particular, as wafer diameters continue to increase, efforts are ongoing to ensure process uniformity within the substrate as well as between substrates—that is, to achieve uniform process results across the entire surface of the substrate. In particular, structural changes to improve process uniformity are being studied in equipment having a showerhead, which is a device that supplies process gas for chemical vapor deposition or etching on a substrate surface for semiconductor device manufacturing. In conventional semiconductor equipment having a shower head, as shown in FIG. 1, a gas dispersion plate (130) is installed between the gas supply port (120) and the bottom of the shower head (140) to reduce the straightness of the gas supplied into the shower head (100) which is integrally formed with the process chamber wall through the gas supply port (120). However, in this conventional technology, a gas dispersion plate (130) is used to suppress the straightness of the gas supplied into the shower head (100) and to spray the gas evenly through the hole (145) drilled in the bottom (140) of the shower head. However, even in this technology, there was a problem in that it was still difficult to evenly control the amount of gas sprayed from the center and edge regions of the shower head (100) because even though the primary straightness of the gas supplied into the shower head (100) is suppressed, the lateral diffusion of the supplied gas is insufficient. FIG. 1 is a side cross-sectional view showing a schematic configuration of an example of semiconductor device manufacturing equipment having a conventional showerhead. FIG. 2 is a side cross-sectional view showing a schematic configuration of semiconductor device manufacturing equipment applying the first embodiment of the present invention. FIG. 3 is a side cross-sectional view showing the shower head portion in more detail in the first embodiment of the present invention. FIG. 2 is a schematic diagram showing a process chamber (1) with a showerhead installed to which the first embodiment of the present invention is applied in semiconductor device manufacturing equipment. Referring to FIG. 2, the process chamber (1) is separated from the outside by a chamber wall, and the substrate (6) is placed on a stage (8) inside the process chamber (1). A showerhead (100) for supplying process gas to the substrate (6) is installed above the substrate (6). A vacuum pipe (252) for removing reaction gas to the outside is connected to a part of the chamber wall. The stage (8) may be equipped with a heater or cooling means for heating or cooling the substrate (6). The shower head (100) forms a space within the process chamber by means of an upper plate (247) connected to a gas supply port (212), a bottom (210) having a plurality of nozzles (222), and an outer wall (268). An intermediate plate (249) is installed to divide the space between the upper plate (247) and the bottom (210) vertically along the longitudinal direction to form an upper diffusion chamber (242) and a lower distribution chamber (244). A plurality of dispersed connection holes are formed in the intermediate plate (249), and a tube-shaped diffusion pin (221) is inserted into the connection hole to form an upward protrusion of the connection hole, thereby causing the entrance of the connection hole to protrude toward the upper plate (247). Process gas is supplied to the diffusion chamber (242) inside the shower head (100) through the gas supply port (212). After the process gas is uniformly diffused in the diffusion chamber (242) inside the shower head (100), it moves to the distribution chamber (244) through the diffusion pin (221) and is evenly sprayed toward the substrate (6) placed on the stage (8) that heats the substrate (6) through a plurality of nozzles (222) drilled in the bottom (210) of the shower head. The chamber (10) can provide a space isolated from the outside for the substrate (W). The chamber (10) can surround the substrate support (20) and the shower heads (30). For example, the chamber (10) may have a slit valve (12), a plurality of stations (14), and a view port (16). The substrate (W) may be provided within the stations (14) of the chamber (10) through the slit valve (12). The stations (14) may be defined by partition walls (18) within the chamber (10). For example, the chamber (10) may have four stations (14). A pair of shower