Search

KR-20260067197-A - HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

KR20260067197AKR 20260067197 AKR20260067197 AKR 20260067197AKR-20260067197-A

Abstract

The present invention relates to a hard mask composition comprising a combination of a moiety represented by the following chemical formula 1 and one or more moietyes represented by the following chemical formula 2 that are bonded to the moiety of the chemical formula 1, a solvent, a hard mask layer prepared from the hard mask composition, and a method for forming a pattern from the hard mask composition. [Chemical Formula 1] [Chemical Formula 2] The definitions of the above Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

Inventors

  • 김성환

Assignees

  • 삼성에스디아이 주식회사

Dates

Publication Date
20260512
Application Date
20241105

Claims (13)

  1. A hard mask composition comprising a compound comprising a combination of a moiety represented by the following chemical formula 1 and one or more moietyes represented by the following chemical formula 2 that are bonded to the moiety of said chemical formula 1, and a solvent: [Chemical Formula 1] In the above chemical formula 1, R1 to R14 are each independently hydrogen, deuterium, hydroxyl group, halogen atom, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, or two adjacent groups among R1 to R14 are connected to each other to form a ring: [Chemical Formula 2] In the above chemical formula 2, X is a substituted or unsubstituted C6 to C30 aryl group, and * is a connection point.
  2. A hard mask composition according to claim 1, wherein R1 to R14 of Formula 1 are each independently hydrogen, deuterium, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, or two adjacent groups among R1 to R14 are connected to each other to form a ring.
  3. A hard mask composition according to claim 1, wherein R1 to R14 of Formula 1 are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group, or a combination thereof, or R2 and R3 , R6 and R7 , R9 and R10 , R10 and R11 , R11 and R12 , R12 and R13 , or R13 and R14 are connected to each other to form a ring.
  4. A hard mask composition according to claim 1, wherein X of the formula 2 is a substituted or unsubstituted C6 to C20 aryl group.
  5. A hard mask composition according to claim 1, wherein the above chemical formula 1 is represented by one or more of the following chemical formulas 1-1 to 1-5: [Chemical Formula 1-1] [Chemical Formula 1-2] [Chemical Formula 1-3] [Chemical Formula 1-4] [Chemical Formula 1-5]
  6. A hard mask composition according to claim 1, wherein the compound is formed by two moietyes represented by Chemical Formula 2 bonded to a moiety represented by Chemical Formula 1.
  7. In claim 1, the hard mask composition wherein the compound is represented by one or more of the following chemical formulas 3 to 8: [Chemical Formula 3] [Chemical Formula 4] [Chemical Formula 5] [Chemical Formula 6] [Chemical Formula 7] [Chemical Formula 8]
  8. A hard mask composition according to claim 1, wherein the molecular weight of the compound is 500 g/mol to 5,000 g/mol.
  9. A hard mask composition according to claim 1, wherein the compound is included in an amount of 0.1% to 30% by weight based on the total weight of the hard mask composition.
  10. A hard mask composition according to claim 1, wherein the solvent is propylene glycol, propylene glycol diacetate, methoxypropanediol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, gamma-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, acetylacetone, or ethyl 3-ethoxypropionate.
  11. A hard mask layer comprising a cured product of a hard mask composition according to any one of claims 1 to 10.
  12. Step of providing a material layer on a substrate, A step of applying a hard mask composition according to any one of claims 1 to 10 onto the above material layer, A step of forming a hard mask layer by heat-treating the above hard mask composition, A step of forming a photoresist layer on the hard mask layer, A step of forming a photoresist pattern by exposing and developing the above photoresist layer, A step of selectively removing the hard mask layer using the above photoresist pattern and exposing a portion of the material layer, and Step of etching the exposed portion of the above material layer, A pattern forming method including
  13. In claim 12, the step of forming the hard mask layer comprises a step of heat treating at 100°C to 1,000°C, a pattern forming method.

Description

Hardmask composition, hardmask layer and method of forming patterns The invention relates to a hard mask composition, a hard mask layer comprising a cured product of the hard mask composition, and a pattern forming method using the hard mask composition. Recently, the semiconductor industry has been evolving from patterns of hundreds of nanometers to ultrafine technology featuring patterns of a few to tens of nanometers. Effective lithographic techniques are essential to realize such ultrafine technology. A typical lithographic technique includes the process of forming a material layer on a semiconductor substrate, coating a photoresist layer thereon, exposing and developing to form a photoresist pattern, and then etching the material layer using the photoresist pattern as a mask. Recently, as the size of the pattern to be formed decreases, it is difficult to form fine patterns with a good profile using only the typical lithographic technique described above. Accordingly, fine patterns can be formed by forming an auxiliary layer, known as a hardmask layer, between the material layer to be etched and the photoresist layer. Figure 1 is a reference diagram illustrating the step difference of a hard mask layer to explain the method for evaluating planarization characteristics. Hereinafter, embodiments of the present invention are described in detail so that those skilled in the art can easily implement them. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. Unless otherwise defined in this specification, “substituted” means that a hydrogen atom in a compound is a halogen atom (F, Br, Cl, or I), a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or its salt, a sulfonic acid group or its salt, a phosphoric acid group or its salt, a vinyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C9 to C30 allylyryl group, a C1 to C30 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, or a C3 to C15 It means being substituted with a substituent selected from a cycloalkenyl group, a C6 to C15 cycloalkenyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof, or having two or more of the listed substituents bonded to form a ring. Unless otherwise defined in this specification, “aryl group” means a group having one or more hydrocarbon aromatic moietys, and includes non-condensed aromatic hydrocarbon rings, condensed aromatic hydrocarbon rings, as well as forms in which hydrocarbon aromatic moietys are connected by a single bond, non-aromatic fused rings in which hydrocarbon aromatic moietys are directly or indirectly fused, or combinations thereof. More specifically, the substituted or unsubstituted aryl group may be a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted quadrphenyl group, a substituted or unsubstituted crisenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted fluorenyl group, a combination thereof, or a combination thereof fused thereto, but is not limited thereto. Unless otherwise defined in this specification, “combination” means mixing or copolymerization. Unless otherwise defined in this specification, “polymer” may include both oligomers and polymers. Unless otherwise defined in this specification, “molecular weight” is measured by dissolving a powder sample in tetrahydrofuran (THF) and then using Agilent Technologies’ 1200 series Gel Permeation Chromatography (GPC) (using Shodex’s LF-804 column and Shodex’s polystyrene as a standard sample). There is a continuous demand in the semiconductor industry to reduce chip size. To meet this, the linewidth of the resist patterned in lithography technology must be in the tens of nanometers. Consequently, the height that can withstand the linewidth of the resist pattern is limited, and there are cases where the resists do not possess sufficient resistance during the etching step. To compensate for this, an auxiliary layer known as a hardmask layer is used between the material layer to be etched and the photoresist layer. Since this hardmask layer acts as an intermediate layer that transfers the fine pattern of the photoresist to the material layer thro