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KR-20260067236-A - CAPACITOR, SEMICONDUCTOR DEVICE INCLDUING THE SAME, METHOD OF FABRICATING CAPACITOR

KR20260067236AKR 20260067236 AKR20260067236 AKR 20260067236AKR-20260067236-A

Abstract

A capacitor, a semiconductor device including the same, and a method for manufacturing the capacitor are disclosed. The disclosed capacitor comprises: a first electrode; a ferroelectric layer on the first electrode; a second electrode on the ferroelectric layer; and an interface film provided between the first electrode and the ferroelectric layer and between the ferroelectric layer and the second electrode.

Inventors

  • 나병훈
  • 김성현
  • 김효원
  • 이주호

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260512
Application Date
20241105

Claims (20)

  1. First electrode; A ferroelectric layer on the first electrode; A second electrode on the ferroelectric layer; and It includes an interface film provided in at least one of the space between the first electrode and the ferroelectric layer and the space between the ferroelectric layer and the second electrode; The above interface film comprises a perovskite structure material, and The above perovskite structural material comprises a metal oxide, and the metal comprises divalent cations, tetravalent cations, and trivalent cations, and A capacitor, wherein the above trivalent cation comprises at least one of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, and In.
  2. In Article 1, The divalent cation of the above interface film comprises at least one of La, Sr, Ba, Nd, Pb, Ca, Na, Eu, and Rb, a capacitor.
  3. In Article 1, The above-mentioned tetravalent cation of the interface film comprises at least one of Ti, Ta, Zr, Hf, and Sn, in a capacitor.
  4. In Article 1, A capacitor in which the first electrode and the second electrode comprise at least one of a perovskite structure material and a rock salt structure material.
  5. In Paragraph 4, A capacitor comprising at least one of the first electrode and the second electrode, wherein the first electrode and the second electrode comprise SrRuO3 , SrIrO3 , SrFeO3 , SrCoO3 , SrMnO3 , CaRuO3 , LaMnO3 , La x Sr (1-x) MnO3 , LaNiO3 , LaFeO3 , LaCoO3, BN , AlN, GaN , Si3N4 , Ta3N5 , Cu3N , InN, Zr3N4 , Hf3N4 , LaN, LuN, TiN, MN , VN, TaN, WN , HfN, NbN, and ZrN.
  6. In Article 1, A capacitor, wherein the ferroelectric layer comprises at least one of a perovskite structure, a fluorite structure, and a wurzite structure.
  7. In Article 6, A capacitor comprising at least one of the ferroelectric layer selected from BaTiO3 , Ba(x)Sr(1-x) TiO3 , PbTiO3 , PbZrO3 , PbTi(x)Zr(1-x) O3 , PbMg (x)Nb(1-x) O3 , PbZn (x) Nb (1-x) O3 , PbFe (x) Nb(1-x) O3 , PbNi (x) Nb (1-x) O3 , PbMg (x) Ta (1-x) O3 , PbMg(x) W (1-x)O3, BiFeO3 , KNbO3 , NaNbO3 , and Sr2Bi2TaO9 .
  8. In Article 6, A capacitor, wherein the ferroelectric layer comprises HfO2 or A-doped HfO2 , and A comprises at least one of Sr, Sc, Y, Al, La, Si, Gd, Zr, N, and Ge.
  9. In Article 8, A capacitor in which the ferroelectric layer comprises HZO.
  10. In Article 6, The above ferroelectric layer comprises at least one of Sc (x) Al (1-x) N, Y (x) Al (1-x) N, Mg (x) Zr (1-x) N, Ga (x) Sc (1-x) N, Sc (x) Al (1-xy) Ga (y) N, and Zn (x) Mg (1-x) O, forming a capacitor.
  11. In Article 1, A capacitor in which the above interface film has a negative charge.
  12. Substrate; A gate structure provided on the above substrate; Source region and drain region provided spaced apart from each other on the above substrate; and A capacitor provided on the above substrate; including The capacitor comprises: a first electrode; a ferroelectric layer on the first electrode; a second electrode on the ferroelectric layer; and an interface film provided between the first electrode and the ferroelectric layer and between the ferroelectric layer and the second electrode. The above interface film comprises a perovskite structure material, and The above interface film comprises a metal oxide, and the metal comprises divalent cations, tetravalent cations, and trivalent cations, and A semiconductor device in which the above trivalent cation comprises at least one of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, and In.
  13. In Article 12, A semiconductor device in which the divalent cation of the interface film comprises at least one of La, Sr, Ba, Nd, Pb, Ca, Na, Eu, and Rb.
  14. In Article 12, A semiconductor device in which the tetravalent cations of the above-mentioned interface film comprise at least one of Ti, Ta, Zr, Hf, and Sn.
  15. In Article 12, A semiconductor device wherein the first electrode and the second electrode each comprise at least one of a perovskite structure material and a rock salt structure material.
  16. In Article 12, A semiconductor device having a superlattice structure in the above-mentioned ferroelectric layer.
  17. In Article 12, A semiconductor device in which the above interface film has a negative charge.
  18. A step of forming a ferroelectric layer on a first electrode; A step of forming a second electrode on the ferroelectric layer; and The method includes the step of forming an interface film between at least one of the first electrode and the ferroelectric layer and between the ferroelectric layer and the second electrode. The above interface film comprises a perovskite structure material, and A method for manufacturing a capacitor, wherein the interface film comprises a metal oxide, the metal comprises a divalent cation, a tetravalent cation, and a trivalent cation, and the tertiary cation comprises at least one of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Al, Ga, and In.
  19. In Article 18, A method for manufacturing a capacitor, wherein the divalent cation of the above-mentioned interface film comprises at least one of La, Sr, Ba, Nd, Pb, Ca, Na, Eu, and Rb.
  20. In Article 18, A method for manufacturing a capacitor, wherein the tetravalent cation of the above-mentioned interface film comprises at least one of Ti, Ta, Zr, Hf, and Sn.

Description

Capacitor, Semiconductor Device Including the Same, Method of Fabricating Capacitor The present disclosure relates to a capacitor, a semiconductor device including the same, and a method for manufacturing a capacitor. As integrated circuit components are downscaled, the space occupied by capacitors is also shrinking. A capacitor consists of a second electrode, a first electrode, and a dielectric film interposed between these electrodes, and high-dielectric-constant dielectric materials are used to exhibit high capacitance. However, as the size of the capacitor decreases, leakage current may flow within it. Therefore, technology is required to minimize the reduction in capacitance while reducing the leakage current flowing within the capacitor. FIG. 1 is a cross-sectional view of a capacitor according to an exemplary embodiment. Figure 2 shows a cross-sectional view of an example in which the position of the interface film of the capacitor shown in Figure 1 is changed. FIG. 3 shows a cross-sectional view of a capacitor including two interface films according to an exemplary embodiment. FIG. 4 illustrates a cross-sectional view of a capacitor including a ferroelectric layer having a superlattice structure according to an exemplary embodiment. Figure 5 shows the degree of crystallization of a capacitor according to an exemplary embodiment. Figure 6 shows the crystal structure of a capacitor according to an exemplary embodiment. Figure 7 shows a TEM image of a capacitor according to an exemplary embodiment. FIG. 8 shows a voltage-polarization graph of a capacitor according to an exemplary embodiment. Figure 9 shows the electric field-polarization graph of a capacitor of a comparative example. Figure 10 shows the voltage-polarization graph of a capacitor of another comparative example. FIGS. 11 and FIGS. 12 are drawings for explaining a manufacturing method according to an exemplary embodiment. FIG. 13 illustrates a semiconductor device according to an exemplary embodiment. FIG. 14 illustrates a semiconductor device according to another exemplary embodiment. Figure 15 is a cross-sectional view taken along the line A-A' of Figure 14. FIG. 16 illustrates a semiconductor device according to another exemplary embodiment. FIG. 17 is a conceptual diagram schematically illustrating a device architecture that can be applied to an electronic device according to an exemplary embodiment. FIG. 18 is a conceptual diagram schematically illustrating a device architecture that can be applied to an electronic device according to an exemplary embodiment. Hereinafter, capacitors according to various embodiments, semiconductor devices including the same, and methods for manufacturing capacitors will be described in detail with reference to the attached drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. Terms such as "first," "second," etc., may be used to describe various components, but the components should not be limited by these terms. The terms are used solely for the purpose of distinguishing one component from another. A singular expression includes a plural expression unless the context clearly indicates otherwise. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Additionally, the size or thickness of each component in the drawings may be exaggerated for clarity of explanation. Furthermore, when a specific material layer is described as existing on a substrate or another layer, that material layer may exist in direct contact with the substrate or other layer, or a third layer may exist between them. Also, since the materials constituting each layer in the following examples are exemplary, other materials may be used. FIG. 1 is a cross-sectional view of a capacitor according to one embodiment. Referring to FIG. 1, the capacitor (100) includes a substrate (110), a first electrode (120) provided on the substrate (110), a ferroelectric layer (140) on the first electrode (120), and a second electrode (150) of the ferroelectric layer (140). The capacitor (100) may include an interface film (130) provided between the first electrode (120) and the ferroelectric layer (140) and between the ferroelectric layer (140) and the second electrode (150). In FIG. 1, an example is shown in which the interface film (130) is provided between the first electrode (120) and the ferroelectric layer (140). As the substrate (110), a silicon substrate, a glass substrate, a sapphire substrate, a silicon substrate coated with SiO2, etc., may be used. However, this is merely an example, and other various materials may be used for the substrate (110). The substrate (110) may be removed, or if the capacitor (100) is combined with another component, it