KR-20260067270-A - SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE REPROCESSING METHOD

KR20260067270AKR 20260067270 AKR20260067270 AKR 20260067270AKR-20260067270-A

Abstract

A semiconductor package is provided comprising: a semiconductor device; a first connection pad provided on one side of the semiconductor device; a connection terminal provided at one end of the first connection pad; and a second connection pad corresponding to the connection terminal and in contact with the connection terminal; wherein, with respect to the connection terminal, the second connection pad corresponding to the first connection pad is located on opposite sides of each other, the connection terminal includes a first terminal area and a second terminal area, the first terminal area is surrounded by the second terminal area, the second terminal area includes an oxidized metal, and the thickness of the second terminal area varies depending on the location.

Inventors

신택수
정승부
윤재준
고연주
함경빈

Assignees

삼성전자주식회사
성균관대학교산학협력단

Dates

Publication Date: 20260512
Application Date: 20241230
Priority Date: 20241105

Claims (10)

semiconductor device; A first connection pad provided on one side of the semiconductor device; A connection terminal provided at one end of the first connection pad; and A second connection pad corresponding to the above connection terminal and in contact with the above connection terminal; is included. Based on the above connection terminal, the second connection pad corresponding to the first connection pad is located on the opposite side from the first connection pad, and The above connection terminal includes a first terminal area and a second terminal area, and The first terminal area is surrounded by the second terminal area, and A semiconductor package characterized in that the second terminal region comprises an oxidized metal, and the thickness of the second terminal region varies depending on the location.
In Article 1, The thickness of the portion adjacent to the first connection pad in the second terminal area is, A semiconductor package characterized by being thicker than the thickness of the portion adjacent to the second connection pad in the second terminal area.
In Article 1, A semiconductor package characterized in that the thickness of the second terminal region gradually decreases as it moves away from the first connection pad.
In Article 1, The thickness of the first portion of the second terminal region is 90 Å or less, and The thickness of the second portion of the second terminal region is 120 Å or more, and A semiconductor package characterized in that the first portion of the second terminal area is further from the first connection pad than the second portion of the second terminal area.
In Article 1, The oxidized metal included in the second terminal region includes tin oxide, and A semiconductor package characterized in that the first terminal region comprises at least one of tin, silver, copper, and alloys made of these.
In Article 1, The first terminal region includes a terminal metal layer, the terminal metal layer contacts the second connection pad, and the terminal metal layer contacts the second terminal region. A semiconductor package characterized in that the terminal metal layer comprises at least one of a nickel-tin (Ni-Sn) alloy, a copper-tin (Cu-Sn) alloy, a gold-tin (Au-Sn) alloy, and a palladium-tin (Pd-Sn) alloy.
In Article 1, The first terminal area contacts a part of the first connection pad, and the second terminal area contacts the remainder of the first connection pad, and A semiconductor package characterized in that the first terminal region contacts a part of the second connection pad, and the second terminal region contacts at least a part of the remainder of the second connection pad.
In Article 1, The second terminal region is etched by an etching solution containing fluorine, so that the thickness of the second terminal region is formed to be thinner in the part farther from the first connection pad than in the part close to the first connection pad, and A semiconductor package characterized in that the longer the exposure time to the etching solution, the greater the amount removed by etching the second terminal region.
semiconductor device; A first connection pad provided on one side of the semiconductor device; and A connection terminal provided at one end of the first connection pad; comprising The above connection terminal includes a first terminal area and a second terminal area, and The first terminal area is surrounded by the second terminal area, and A semiconductor package characterized in that the second terminal region comprises an oxidized metal, and the thickness of the second terminal region varies depending on the location.
semiconductor device; A first connection pad provided on one side of the semiconductor device; A connection terminal provided at one end of the first connection pad; and A second connection pad corresponding to the above connection terminal and in contact with the above connection terminal; is included. The above connection terminal is a solder ball, and Based on the above connection terminal, the second connection pad corresponding to the first connection pad is located on the opposite side from the first connection pad, and The above connection terminal includes a first terminal area and a second terminal area, and The first terminal area is surrounded by the second terminal area, and The second terminal region comprises an oxidized metal, and the thickness of the second terminal region varies depending on the location, The oxidized metal included in the second terminal region includes tin oxide, and The first terminal region comprises at least one of tin, silver, copper, and alloys made of these, and The first terminal region includes a terminal metal layer, the terminal metal layer contacts the second connection pad, and the terminal metal layer contacts the second terminal region. The terminal metal layer comprises at least one of a nickel-tin (Ni-Sn) alloy, a copper-tin (Cu-Sn) alloy, a gold-tin (Au-Sn) alloy, and a palladium-tin (Pd-Sn) alloy, and The thickness of the second terminal region at the first point of the second terminal region is greater than the thickness of the second terminal region at the second point of the second terminal region, and The thickness of the second terminal region at the second point of the second terminal region is greater than the thickness of the second terminal region at the third point of the second terminal region, and At the first point of the second terminal region, the thickness of the second terminal region corresponds to a range of 90 Å to 190 Å, and At the second point of the second terminal region, the thickness of the second terminal region corresponds to a range of 50 Å to 120 Å, and At the third point of the second terminal region, the thickness of the second terminal region corresponds to a range of 0 Å to 70 Å, and The points are closest to the first connection pad in the order of the first point, the second point, and the third point, and The thickness of the thickest part of the thickness of the second terminal region is at least 3 times and no more than 10 times the thickness of the thinnest part of the thickness of the second terminal region, and The first terminal area contacts a part of the first connection pad, the second terminal area contacts the remainder of the first connection pad, the first terminal area contacts a part of the second connection pad, and the second terminal area contacts at least a part of the remainder of the second connection pad. The above-mentioned first connection pad includes a first pad metal layer and a second pad metal layer, and The first terminal area contacts the first pad metal layer, and the second terminal area contacts the first pad metal layer. A semiconductor package characterized in that the first pad metal layer comprises at least one of gold (Au), nickel (Ni), tin (Sn), lead (Pb), and tin-silver alloy.

Description

Semiconductor Package and Semiconductor Package Reprocessing Method The technical concept of the present invention relates to a semiconductor package and a method for reprocessing a semiconductor package, and more specifically, to a semiconductor package in which solder balls provided in the semiconductor package are etched and a method for reprocessing a semiconductor package. When mounting a semiconductor device onto a substrate or another semiconductor device, electrical connections may be established via connection terminals. For example, connection terminals may include solder balls. An oxide film may form on the surface of the solder balls. If an oxide film forms on the surface of the solder balls, there is a higher likelihood that the solder balls will not wet the pads when they come into contact with them. If the solder balls do not wet the pads, the resistance to the electrical connection may be excessively high, or an electrical connection may not be established at all. In other words, defects in the electrical connection of the semiconductor device may occur due to the oxide film formed on the solder balls. There is a need for measures to prevent the non-wetting phenomenon caused by the oxide film on the solder balls, or to resolve electrical connection failures in semiconductor packages caused by non-wetting. FIG. 1a is a cross-sectional view showing a typical semiconductor package. FIG. 1b is an enlarged cross-sectional view of portion A of a conventional semiconductor package of FIG. 1a. FIG. 2 is a cross-sectional view illustrating the separation of the semiconductor packages of FIG. 1a and FIG. 1b from the substrate. FIG. 3a is a schematic perspective view illustrating the etching of connection terminals of a semiconductor package separated from a substrate. Figure 3b is a cross-sectional view showing the change in the connection terminal during the etching process, enlarged from part B of Figure 3a. FIG. 4 is a cross-sectional view illustrating the mounting of a semiconductor package, which has undergone the etching process of FIG. 3a and FIG. 3b, onto a substrate. FIG. 5a is a cross-sectional view showing a semiconductor package according to exemplary embodiments of the present invention. FIG. 5b is an enlarged cross-sectional view of portion C of the semiconductor package of FIG. 5a. FIG. 6a is a flowchart illustrating a semiconductor package reprocessing method according to exemplary embodiments of the present invention. FIG. 6b is a flowchart illustrating a semiconductor package reprocessing method according to exemplary embodiments of the present invention. FIG. 7 is a flowchart illustrating a semiconductor package reprocessing method according to exemplary embodiments of the present invention. Figure 8 is a graph showing the relationship between the thickness of the oxide film and the time it is left in a high temperature and high humidity environment. Figure 9 is a graph showing the relationship between the thickness of the oxide film and the etching time. Figure 10 is a graph showing the relationship between the bonding force of the solder ball and the time the solder ball is left in a high temperature and high humidity environment as shear force. Figure 11 is a graph showing the relationship between the resistance of the solder ball and the connection pad and the time the solder ball is left in a high temperature and high humidity environment. FIG. 12a is a cross-sectional view showing a semiconductor package according to exemplary embodiments of the present invention. FIG. 12b is an enlarged cross-sectional view of portion D of the semiconductor package in FIG. 12a. Hereinafter, embodiments of the technical concept of the present disclosure will be described in detail with reference to the attached drawings. Embodiments of the technical concept of the present invention are provided to more completely explain the technical concept of the present invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the technical concept of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the technical concept of the present invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation. In this specification, the first direction refers to the X direction and the second direction refers to the Y direction, and the first direction and the second direction may be perpendicular. The third direction is the Z direction, and the third direction may be perpendicular to the first direction and the second direction, respectively. The horizontal plane or plane refers to the X-Y plane. The upper surface of a specific object refers to a surface located in the positive third direction relative to the specifi