KR-20260067298-A - Wafer Suction Pad and Method for Manufacturing the Same

Abstract

assignment A wafer adsorption pad is provided that can prevent scratches on the wafer and can also position the wafer with high precision relative to the holder. means of solution Each silicon wafer (20) has a plurality of napped portions (15) that are inclined in a predetermined direction (inclination direction (HD)) so that the center (third central axis (CA3)) of the silicon wafer (20) does not deviate from the center (second central axis (CA2)) of the mounting surface (12), and are further inclined by the silicon wafer (20) when the silicon wafer (20) is adsorbed to the mounting surface (12) by the negative pressure of the air passage (13). By doing so, it is possible to prevent scratches on the silicon wafer (20) and also to position the silicon wafer (20) with high precision relative to the holder.

Inventors

• 류노스케 카와하라
• 히로유키 이토

Assignees

• 가부시키가이샤 비비에스 킨메이

Dates

Publication Date

20260512

Application Date

20250725

Priority Date

20241105

Claims (3)

1. A wafer adsorption pad installed between a wafer and a holder of a polishing device that polishes the outer edge of the wafer, and made of an elastic material, A mounting surface mounted on the above-mentioned retainer, and A mounting surface on which the above wafer is placed, and An air passage connecting the above-mentioned mounting surface and the above-mentioned placement surface, and A plurality of voids in which the mounting surface side is closed and the placement surface side is open, and A plurality of protrusions that are each inclined in a predetermined direction so that the center of the wafer does not deviate with respect to the center of the mounting surface, and are further inclined by the wafer when the wafer is adsorbed to the mounting surface by the negative pressure of the air passage. , equipped with Wafer adsorption pad.
2. In paragraph 1, A plurality of the above-mentioned protrusions are pre-slanted such that their tips are directed toward one side in the circumferential direction of the mounting surface, with respect to the center of the mounting surface. Wafer adsorption pad.
3. A method for manufacturing a wafer adsorption pad made of an elastic material, which is installed between a wafer and a holder of a polishing device that polishes the outer edge of the wafer. A cutting process for cutting a circular pad material from a sheet material having multiple voids, and A polishing process for polishing the side of the pad material on which the wafer is placed to open a plurality of voids, and An air passage forming process that forms an air passage penetrating the pad material in the thickness direction. Equipped with, In the above polishing process, while rotating the pad material around its center, a polishing tool is pressed down on the side of the pad material where the wafer is placed, thereby causing a plurality of protrusions formed on the side of the pad material where the wafer is placed to be inclined in advance such that their tips face toward one side of the circumferential direction of the pad material around the center of the pad material. Method for manufacturing a wafer adsorption pad.

Description

Wafer Suction Pad and Method for Manufacturing the Same The present invention relates to a wafer adsorption pad and a method for manufacturing the same. For example, Patent Document 1 describes a polishing device that takes a semiconductor wafer as a work and polishes the outer edge thereof. The polishing device described in Patent Document 1 has a work holding plate that holds the work by suction under negative pressure, and a rotating head that rotates relative to the work holding plate and also has a polishing tool. Figure 1 is a drawing showing an example of application to a polishing device for a wafer adsorption pad. Figure 2 is a drawing showing details of a wafer adsorption pad. Figure 3 is a diagram illustrating the positioning precision of the wafer adsorption pad. Figure 4 is a flowchart showing the manufacturing sequence of a wafer adsorption pad. Figure 5 is a diagram illustrating the [cutting process]. Figure 6 is a diagram illustrating the [grinding process]. Figure 7 is an enlarged image showing a cross-section of the pad material before polishing. Figure 8 is an enlarged image showing a cross-section of the pad material after polishing. Figure 9 is a diagram illustrating the [air passage formation process]. Figure 10 is a diagram illustrating the positioning precision of the wafer adsorption pad of the comparative example. Figure 11 is a diagram illustrating the [polishing process] of the wafer adsorption pad of the modified example. Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a drawing showing an application example of a polishing device for a wafer adsorption pad. FIG. 2 is a drawing showing details of a wafer adsorption pad. <Overview of the Grinding Device> As shown in FIG. 1, the wafer adsorption pad (10) is applied to a polishing device (30) that polishes the outer edge of a silicon wafer (wafer) (20) formed in a thin, circular shape. The polishing device (30) has a holding member (31) that holds the silicon wafer (20). The holding member (31) is formed in a roughly disc shape and is positioned on a first central axis (CA1). Additionally, the holding member (31) is supported by a supporting axis (32) positioned on the first central axis (CA1). Furthermore, the holding member (31) and the supporting axis (32) are capable of rotational driving around the first central axis (CA1). At the center of the holding member (31) and the support axis (32), a first vacuum furnace (33) is formed to supply negative pressure air along the first central axis (CA1). Additionally, on the side (upper side in the drawing) where the wafer adsorption pad (10) of the holding member (31) is installed, a plurality of second vacuum furnaces (34) are formed to communicate with the first vacuum furnace (33). Here, the plurality of second vacuum furnaces (34) extend radially in a direction perpendicular to the first central axis (CA1) and also extend in the circumferential direction of the holding member (31) with the first central axis (CA1) as the center. Additionally, the polishing device (30) is equipped with a rotating head (35) that rotates relative to the holder (31) around a first central axis (CA1). The rotating head (35) has a frame (36), and a plurality of first polishing tools (37) and second polishing tools (38) are movably installed on the frame (36). Meanwhile, the first polishing tool (37) moves in a direction perpendicular to the first central axis (CA1), and the second polishing tool (38) moves in a direction inclined with respect to the first central axis (CA1). Here, the first grinding tool (37) and the second grinding tool (38) are each mounted on a oscillating arm (not shown) equipped with a weight. Meanwhile, the oscillating arm is mounted to oscillate freely on the frame (36). Then, as the frame (36) rotates, the weight moves outward in the radial direction due to centrifugal force, and the first grinding tool (37) and the second grinding tool (38), which are lighter than the weight, are each moved inward in the radial direction. Additionally, the wafer adsorption pad (10) is fixed to the upper side of the holding stand (31), that is, the side where the second vacuum furnace (34) is formed, by means of an adhesive tape or the like (not shown). Specifically, the second central axis (CA2) (see FIG. 2) of the wafer adsorption pad (10) coincides with the first central axis (CA1) of the holding stand (31). In addition, the straight passage (13a) and the arc-shaped passage (13b) (see FIG. 2) of the wafer adsorption pad (10) are respectively aligned with the second vacuum furnace (34) of the holding stand (31). Operation of the grinding device In order to polish the outer edge of a silicon wafer (20), first, the silicon wafer (20) is placed on a wafer adsorption pad (10). At this time, the third central axis (CA3) of the silicon wafer (20) is aligned with the second central axis (CA2) of the wafer adsorption pad (10). Th