KR-20260067337-A - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract

The uniformity in the etching process of a polysilicon film formed on a substrate is improved. A substrate treatment method according to one aspect of the present disclosure includes a process of adding a silicate compound to an alkaline treatment solution to produce an etching solution, and a process of etching a polysilicon film formed on a substrate with the etching solution.

Inventors

• 아베 레이코
• 하마시마 유타

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260512

Application Date

20251031

Priority Date

20241105

Claims (17)

1. A process for producing an etching solution by adding a silicate compound to an alkaline treatment solution, and A process of etching a polysilicon film formed on a substrate with the etching solution. A substrate processing method including
2. In Article 1, The above polysilicon film is located on the inner surface of a concave portion formed on the surface of the substrate, and The above etching process etches at least a portion of the polysilicon film located on the inner surface of the concave portion. Substrate processing method.
3. In Article 1 or Article 2, The above silicic acid compound is colloidal silica. Substrate processing method.
4. In Article 1 or Article 2, The above silicic acid compound is at least one of sodium silicate, potassium silicate, and calcium silicate. Substrate processing method.
5. In Article 1 or Article 2, The above treatment solution is diluted ammonia water, SC1 (a mixture of ammonia water and hydrogen peroxide), NC2 (a mixture of choline aqueous solution and hydrogen peroxide), or TMAH (tetramethylammonium hydroxide). Substrate processing method.
6. A treatment tank that performs an etching treatment by immersing a lot composed of one or more substrates in an etching solution produced by adding a silicate compound to an alkaline treatment solution, and A treatment liquid supply unit that supplies the treatment liquid to the treatment tank, and A silica supply unit that supplies the silica compound to the above treatment tank, and A concentration measuring unit for measuring the concentration of the components of the etching solution stored in the above treatment tank, and A control unit that controls each part, and A memory unit storing correlation data in which the correlation between the concentration of the silicate compound in the etching solution within the processing tank and the etching rate of the polysilicon film formed on the substrate is stored. A substrate processing device equipped with
7. In Article 6, The control unit adjusts the amount of the silicate compound supplied to the treatment tank based on the composition of the lot scheduled for etching treatment and the correlation data. Substrate processing device.
8. In Article 7, The control unit supplies the silicate compound to the treatment tank before the etching process of the lot scheduled for etching treatment. Substrate processing device.
9. In Article 8, The control unit replaces at least a portion of the etching solution in the treatment tank before the etching treatment of the lot when it is determined that, after the etching treatment of the lot scheduled for etching treatment, the concentration of the silicate compound in the etching solution in the treatment tank reaches a threshold value for reduction. Substrate processing device.
10. In any one of Articles 7 through 9, The control unit supplies the silicate compound to the treatment tank during the etching process of the lot. Substrate processing device.
11. In Article 10, The control unit replaces at least a portion of the etching solution in the treatment tank during the etching process of the lot when the concentration of the silicate compound in the etching solution in the treatment tank reaches a threshold value during the etching process of the lot. Substrate processing device.
12. In any one of Articles 7 through 9, The above correlation data includes a calibration curve representing the correlation between the concentration of the silicate compound in the etching solution within the processing tank and the etching rate of the polysilicon film formed on the substrate. Substrate processing device.
13. In any one of Articles 7 through 9, The control unit adjusts the time of the etching treatment performed on the lot based on the concentration of the silicate compound in the treatment tank measured by the concentration measuring unit. Substrate processing device.
14. In any one of Articles 7 through 9, Among the concentration measuring units, the concentration sensor for measuring the concentration of the silicate compound in the etching solution within the treatment tank is a microwave plasma atomic emission spectrometer, a high-frequency inductively coupled plasma emission spectrometer, or an inductively coupled high-frequency plasma mass spectrometer. Substrate processing device.
15. In any one of Articles 7 through 9, The above treatment solution is diluted ammonia water, SC1, NC2, or TMAH. Substrate processing device.
16. In Article 15, The above control unit controls the operation of the treatment liquid supply unit so that the concentration of the treatment liquid in the treatment tank becomes within the concentration range of the treatment liquid. Substrate processing device.
17. In any one of Articles 7 through 9, When etching the above lot, the temperature of the etching solution is 40℃ to 80℃. Substrate processing device.

Description

Substrate Processing Method and Substrate Processing Apparatus An embodiment of the disclosure relates to a substrate processing method and a substrate processing apparatus. Conventionally, a technique for performing an etching treatment of a polysilicon film formed on a substrate by using an alkaline treatment solution is known (see Patent Document 1). FIG. 1 is a schematic block diagram showing the configuration of a substrate processing system according to an embodiment. FIG. 2 is an enlarged cross-sectional view showing an example of a surface structure of a wafer according to an embodiment. FIG. 3 is a schematic block diagram showing the configuration of an etching processing apparatus according to an embodiment. FIG. 4 is a flowchart showing an example of the sequence of control processing performed by a substrate processing system according to an embodiment. Figure 5 is a figure showing an example of the trend of the concentration of a silicate compound in a treatment tank during an etching treatment according to an embodiment. Figure 6 is a figure showing the relationship between the concentration of the silicic acid compound added to the etching solution and the BT ratio. FIG. 7 is a figure showing another example of the trend of the concentration of a silicate compound in a treatment tank during an etching treatment according to an embodiment. FIG. 8 is a figure showing another example of the trend of the concentration of a silicate compound in a treatment tank during an etching treatment according to an embodiment. FIG. 9 is a figure showing another example of the trend of the concentration of a silicate compound in a treatment tank during an etching treatment according to an embodiment. FIG. 10 is a figure showing another example of the trend of the concentration of a silicate compound in a treatment tank during an etching treatment according to an embodiment. FIG. 11 is a flowchart showing another example of the sequence of control processing performed by a substrate processing system according to an embodiment. Hereinafter, embodiments of the substrate processing method and substrate processing apparatus disclosed herein will be described in detail with reference to the attached drawings. Furthermore, the present disclosure is not limited by the embodiments shown below. Additionally, it should be noted that the drawings are schematic and that the relationships between the dimensions of each element and the ratios of each element may differ from reality. Furthermore, there may be parts in which the relationships between dimensions and ratios differ from one another. Conventionally, a technique for performing an etching treatment of a polysilicon film formed on a substrate by using an alkaline treatment solution is known. However, in the above-mentioned conventional technique, there were cases where the difference between the amount of etching of the polysilicon film on the opening side of the hole formed on the substrate and the amount of etching of the polysilicon film on the bottom side of the hole became large. Accordingly, it is expected that a technology can be realized that overcomes the aforementioned problems and improves the uniformity in the etching process of a polysilicon film formed on a substrate, for example, the uniformity of the amount of etching in the depth direction of a hole formed on the substrate. Configuration of the Substrate Processing System First, the configuration of a substrate processing system (1) according to an embodiment will be described with reference to FIGS. 1 and FIG. 2. FIG. 1 is a schematic block diagram showing the configuration of a substrate processing system (1) according to an embodiment. The substrate processing system (1) is an example of a substrate processing device. As shown in FIG. 1, a substrate processing system (1) according to an embodiment comprises a carrier receiving/releasing unit (2), a lot forming unit (3), a lot placement unit (4), a lot conveying unit (5), a lot processing unit (6), and a control device (7). The carrier receiving/exporting unit (2) is equipped with a carrier stage (20), a carrier conveying mechanism (21), a carrier stock (22, 23), and a carrier placement stand (24). The carrier stage (20) arranges a plurality of carriers (C) that are transported from the outside. A carrier (C) is a container that accommodates a plurality (e.g., 25 wafers) of wafers (W) arranged vertically in a horizontal position. A carrier transport mechanism (21) transports the carriers (C) between the carrier stage (20), carrier stocks (22, 23), and carrier placement table (24). Here, the configuration of the wafer (W) to be etched in the substrate processing system (1) according to the embodiment will be explained with reference to FIG. 2. FIG. 2 is an enlarged cross-sectional view showing an example of the surface structure of the wafer (W) according to the embodiment. The wafer (W) is an example of a substrate. As shown in FIG. 2, in a subst