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KR-20260067542-A - Epitaxial reactor

KR20260067542AKR 20260067542 AKR20260067542 AKR 20260067542AKR-20260067542-A

Abstract

The embodiment relates to an epitaxial growth apparatus capable of dispersing light concentrated at the center of a wafer. According to one aspect of an embodiment, an epitaxial growth apparatus is provided comprising: a dome chamber through which a deposition gas flows; a susceptor provided inside the dome chamber and on which a wafer is placed; a shaft that supports the susceptor and rotates the susceptor; a plurality of lamps spaced apart from each other outside the dome chamber; a reflector provided between the dome chamber and the lamps and reflecting light generated from the lamps into the dome chamber; and a lens provided between the dome chamber and the lamps and refracting light generated from the lamps.

Inventors

  • 이세리

Assignees

  • 에스케이실트론 주식회사

Dates

Publication Date
20260513
Application Date
20241106

Claims (11)

  1. A dome chamber through which deposition gas flows; A susceptor provided inside the dome chamber and on which a wafer is placed; A shaft that supports the susceptor and rotates the susceptor; A plurality of lamps spaced apart from the outer side of the dome chamber; A reflector provided between the dome chamber and the lamps, and reflecting light generated from the lamps into the dome chamber; and An epitaxial growth apparatus comprising: a lens provided between the dome chamber and the lamps, which refracts light generated from the lamps.
  2. In paragraph 1, The above lamp is, A plurality of inner lower lamps provided around the shaft so as to be located at the lower side of the dome chamber, and It includes a plurality of outer lower lamps provided around the inner lower lamps, and The above lens is, An epitaxial growth apparatus comprising a lower lens provided between the lower part of the dome chamber and the inner lower ramps.
  3. In paragraph 2, The above lower lens is, An epitaxial growth device configured in a ring shape parallel to the upper side of the inner lower lamps.
  4. In paragraph 2, The above lower lens is, An epitaxial growth device configured in the shape of a ring that slopes downward from the center to the edge of the dome chamber, on the upper side of the inner lower ramps.
  5. In paragraph 2, The above reflector is, An inner lower reflector provided between the shaft and the inner lower lamps, and A center lower reflector provided between the inner lower lamps and the outer lower lamps so as to be located outside the inner lower reflector, and It includes an outer lower reflector provided on the outer side of the outer lower lamps so as to be located on the outer side of the center lower reflector, and The above lower lens is, An epitaxial growth device mounted on the top between the inner lower reflector and the center lower reflector.
  6. In paragraph 1, The above lamps are, It includes a plurality of upper lamps spaced apart from the outer upper part of the dome chamber, and The above lens is, An epitaxial growth apparatus comprising an upper lens provided between the upper part of the dome chamber and the upper ramps.
  7. In paragraph 6, The upper lens mentioned above is, An epitaxial growth device configured in a ring shape parallel to the upper side of the upper ramps.
  8. In paragraph 6, The upper lens mentioned above is, An epitaxial growth device configured in the shape of a ring that slopes upward from the center to the edge of the dome chamber, on the lower side of the upper ramps.
  9. In paragraph 6, The above reflector is, It includes an upper reflector provided across the upper part and perimeter of the upper lamps, and The upper lens mentioned above is, An epitaxial growth device mounted on the upper reflector so as to be located below the upper lamps.
  10. In paragraph 1, The above lens is, Epitaxial growth device composed of concave lenses.
  11. In paragraph 1, The above lens is, Epitaxial growth device composed of quartz lenses.

Description

Epitaxial growth device {Epitaxial reactor} The embodiment relates to an epitaxial growth apparatus capable of dispersing light concentrated at the center of a wafer. Wafers used as materials for manufacturing semiconductor devices are produced through steps such as slicing, which thinly slices a single-crystal silicon ingot into a wafer shape; lapping, which improves flatness while polishing to the desired wafer thickness; etching, which removes damage to the wafer; polishing, which improves surface mirror finish and flatness; and cleaning, which removes contaminants from the wafer surface. An epitaxial wafer is a wafer in which a thin epitaxial film is formed on a polished wafer by chemical vapor deposition in a high-temperature chamber of 1000°C or higher. The thickness of this epitaxial film is affected by the flow rate of reaction gas introduced into the processor chamber, the chamber volume, and the heating of the chamber. According to Japanese Patent Application No. 2004-071606 (filed on March 12, 2004), an epitaxial growth apparatus is provided that eliminates non-uniformity of radiant heat from a halogen lamp and uniformly deposits an epitaxial film on a semiconductor wafer. A susceptor that mounts a semiconductor wafer is provided with a susceptor support member that contacts and supports the back surface of the susceptor, and the susceptor support member covers the back surface of the semiconductor wafer mounting portion of the susceptor. The susceptor support member has a cylindrical or conical shape and is formed of transparent quartz. Due to the susceptor support member, the semiconductor wafer receives radiant heat uniformly from a halogen lamp below, and as a result, the susceptor temperature in the reaction chamber of the epitaxial apparatus can be uniformized across the entire surface, and an epitaxial film of uniform thickness can be deposited on the surface of the mounted semiconductor wafer. FIG. 1 is a schematic diagram showing the light distribution in a conventional epitaxial growth apparatus, and FIG. 2 is an image showing the temperature distribution of a wafer in a conventional epitaxial growth apparatus. As shown in FIG. 1, a conventional epitaxial growth apparatus may be equipped with lamps (L1, L2) and reflectors (R1~R3) on the outside of the dome chamber (D) to heat a susceptor (not shown) on which a wafer is placed inside the dome chamber (D). Upper lamps (not shown) and an upper reflector (not shown) are also provided on the upper side of the dome chamber (D). Inner lower lamps (L1) and outer lower lamps (L2) are provided on the lower side of the dome chamber (D), the inner lower lamps (L1) are arranged along the circumferential direction around a shaft (S) located at the center of the dome chamber (D), and the outer lower lamps (L2) are arranged along the circumferential direction around the inner lower lamps (L1), and lower reflectors (R1, R2, R3) are provided to reflect light generated from the inner lower lamps (L1) and outer lower lamps (L2) to the lower side of the dome chamber (D). Light generated from upper lamps (not shown) is reflected by an upper reflector (not shown) and passes through the dome chamber (D) to heat the wafer directly, whereas light generated from lower lamps (L1, L2) is reflected by lower reflectors (R1~R3) and passes through the dome chamber (D) but heats the wafer by passing through a shaft (S) and a susceptor (not shown). According to the prior art, heat is concentrated in the center of the wafer by the inner lower lamps (L1) and heat is concentrated in the edge of the wafer by the outer lower lamps (L2). However, as shown in FIG. 2, the temperature in the center of the wafer is higher than the temperature in the edge of the wafer overall, so even if the flow rate of the source gas is maintained uniformly throughout the wafer, there is a problem in that the thickness of the epitaxial layer is formed thicker in the center of the wafer. FIG. 1 is a schematic diagram showing the light distribution in a conventional epitaxial growth apparatus. Figure 2 is an image showing the temperature distribution of a wafer in a conventional epitaxial growth apparatus. FIG. 3 is a side cross-sectional view showing a first embodiment of an epitaxial growth apparatus according to the present invention. FIG. 4 is a side cross-sectional view schematically illustrating the path of light passing through the lamp in FIG. 3. FIG. 5 is a plan view showing the mounting structure of the lower lens in FIG. 3. FIG. 6 is a side cross-sectional view showing a second embodiment of an epitaxial growth apparatus according to the present invention. FIG. 7 is a side cross-sectional view illustrating a third embodiment of an epitaxial growth apparatus according to the present invention. FIG. 8 is a side cross-sectional view illustrating a fourth embodiment of an epitaxial growth apparatus according to the present invention. FIG. 9 is a graph showing the temperature distribution of