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KR-20260067763-A - LOW NOISE AMPLIFIER AND ELECTRONIC DEVICE USING LOW NOISE AMPLIFIER IN WIRELESS COMMUNICATION SYSTEM

KR20260067763AKR 20260067763 AKR20260067763 AKR 20260067763AKR-20260067763-A

Abstract

According to one embodiment of the present disclosure, a low noise amplifier (LNA) (200) in a wireless communication system comprises a first amplifier ( 210 ) that includes a first transistor (M1) and amplifies a first input signal based on a first gain value to generate a first output signal, a second amplifier (230) that includes a plurality of second transistors ( M2 ) and amplifies a second input signal based on a second gain value to generate a second output signal, and a balun (220) connected between the first amplifier and the second amplifier, which inputs the first output signal as a third input signal and outputs the second input signal as an output signal, wherein the balun comprises a first inductor ( Lp ) (241), a second inductor ( Ls1 ) (243), and a third inductor ( Ls2 ) (245), and the third inductor is connected to the sources of the plurality of second transistors. Other embodiments are possible.

Inventors

  • 김진현
  • 김기현
  • 서보희

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260513
Application Date
20241106

Claims (20)

  1. In a low noise amplifier (LNA) (200) in a wireless communication system, A first amplifier (210) including a first transistor ( M1 ) and amplifying a first input signal based on a first gain value to generate a first output signal; A second amplifier (230) comprising a plurality of second transistors ( M2 ) and amplifying a second input signal based on a second gain value to generate a second output signal; and It includes a balun (220) connected between the first amplifier and the second amplifier, inputting the first output signal as a third input signal and outputting the second input signal as an output signal, and The balun comprises a first inductor (L p ) (241), a second inductor (L s1 ) (243), and a third inductor (L s2 ) (245), wherein the third inductor is connected to the sources of the plurality of second transistors, the LNA.
  2. In paragraph 1, The above balun is the LNA comprising a metal stack including a plurality of metal layers on a substrate.
  3. In paragraph 2, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The first inductor is positioned at the outermost of the first inductor, second inductor, and third inductor in the first metal layer, and The third inductor is positioned at the innermost of the first inductor, second inductor, and third inductor in the first metal layer, and The second inductor is the LNA positioned between the first inductor and the third inductor.
  4. In paragraph 2, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The second inductor is connected across the gates of the plurality of second transistors.
  5. In paragraph 2, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The above third inductor is the LNA connected across the sources of the plurality of second transistors.
  6. In paragraph 1, The LNA, in which the second inductor and the third inductor are crossed and connected to the second amplifier.
  7. In paragraph 2, The third inductor connected to the sources of the plurality of second transistors is the LNA connected to ground (GND).
  8. In paragraph 2, The third inductor connected to the sources of the plurality of second transistors is the LNA connected to the first inductor.
  9. In any one of paragraphs 1 through 8, The above balun further includes a capacitor ( C1 ) connected to the power supply of the above balun.
  10. In any one of paragraphs 1 through 9, The first amplifier above includes a single-ended type amplifier, and The above second amplifier is the LNA including a differential type amplifier.
  11. In an electronic device (101) in a wireless communication system, It includes a low noise amplifier (LNA) (200), The above LNA is: A first amplifier (210) including a first transistor ( M1 ) and amplifying a first input signal based on a first gain value to generate a first output signal; A second amplifier (230) comprising a plurality of second transistors ( M2 ) and amplifying a second input signal based on a second gain value to generate a second output signal; and It includes a balun (220) connected between the first amplifier and the second amplifier, inputting the first output signal as a third input signal and outputting the second input signal as an output signal, and The above balun comprises a first inductor (L p ) (241), a second inductor (L s1 ) (243), and a third inductor (L s2 ) (245), and the third inductor is connected to the sources of the plurality of second transistors, the electronic device.
  12. In Paragraph 11, The above balun is an electronic device comprising a metal stack having a plurality of metal layers on a substrate.
  13. In Paragraph 12, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The first inductor is positioned at the outermost of the first inductor, second inductor, and third inductor in the first metal layer, and The third inductor is positioned at the innermost of the first inductor, second inductor, and third inductor in the first metal layer, and The electronic device wherein the second inductor is positioned between the first inductor and the third inductor.
  14. In Paragraph 12, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The electronic device wherein the second inductor is connected across the gates of the plurality of second transistors.
  15. In Paragraph 12, The first inductor, the second inductor, and the third inductor are disposed in the first metal layer among the plurality of metal layers, and The electronic device wherein the third inductor is connected in an alternating manner to the sources of the plurality of second transistors.
  16. In Paragraph 11, The electronic device in which the second inductor and the third inductor are crossed and connected to the second amplifier.
  17. In Paragraph 12, The electronic device in which the third inductor connected to the sources of the plurality of second transistors is connected to ground (GND).
  18. In Paragraph 12, The third inductor connected to the sources of the plurality of second transistors is the electronic device connected to the first inductor.
  19. In any one of paragraphs 11 through 18, The electronic device further comprising a capacitor ( C1 ) connected to the power supply of the above balun.
  20. In any one of paragraphs 11 through 19, The first amplifier above includes a single-ended type amplifier, and The electronic device comprising the second amplifier above is a differential type amplifier.

Description

Low Noise Amplifier and Electronic Device Using Low Noise Amplifier in Wireless Communication System The present disclosure relates to a low noise amplifier (LNA) and an electronic device using the LNA in a wireless communication system. Looking back at the evolution of wireless communication through successive generations, technologies have been developed primarily for human-oriented services, such as voice, multimedia, and data. Following the commercialization of 5G (5th-generation) communication systems, connected devices, which have been increasing explosively, are expected to be connected to communication networks. Examples of networked objects include vehicles, robots, drones, home appliances, displays, smart sensors installed in various infrastructures, construction machinery, and factory equipment. Mobile devices are expected to evolve into various form factors, such as augmented reality glasses, virtual reality headsets, and holographic devices. In the 6G (6th-generation) era, efforts are underway to develop improved 6G communication systems to connect hundreds of billions of devices and objects to provide diverse services. For this reason, 6G communication systems are being referred to as "beyond 5G" systems. In the 6G communication system predicted to be realized around 2030, the maximum transmission speed is tera (i.e., 1,000 gigabit) bps, and the wireless latency is 100 microseconds (μsec). In other words, compared to the 5G communication system, the transmission speed in the 6G communication system is 50 times faster, and the wireless latency is reduced to one-tenth. To achieve such high data transmission speeds and ultra-low latency, 6G communication systems are being considered for implementation in the terahertz band (e.g., the 95 GHz to 3 terahertz (3 THz) band). In the terahertz band, due to more severe path loss and atmospheric absorption compared to the millimeter wave (mmWave) band introduced in 5G, the importance of technology capable of guaranteeing signal reach, or coverage, is expected to increase. As key technologies to ensure coverage, radio frequency (RF) devices, antennas, new waveforms that offer better coverage than orthogonal frequency division multiplexing (OFDM), beamforming, and multi-antenna transmission technologies such as massive multiple-input and multiple-output (massive MIMO), full-dimensional MIMO (FD-MIMO), array antennas, and large-scale antennas must be developed. In addition, new technologies such as metamaterial-based lenses and antennas, high-dimensional spatial multiplexing technology using orbital angular momentum (OAM), and reconfigurable intelligent surface (RIS) are being discussed to improve coverage of terahertz band signals. In addition, to improve frequency efficiency and system network, development is underway in 6G communication systems for full duplex technology, in which uplink and downlink simultaneously utilize the same frequency resources at the same time; network technology that integrates satellites and HAPS (high-altitude platform stations); network structure innovation technology that supports mobile base stations and enables network operation optimization and automation; dynamic spectrum sharing technology through collision avoidance based on spectrum usage prediction; AI-based communication technology that utilizes AI (artificial intelligence) from the design stage and internalizes end-to-end AI support functions to realize system optimization; and next-generation distributed computing technology that realizes services of complexity exceeding the limits of terminal computing capabilities by utilizing ultra-high performance communication and computing resources (mobile edge computing (MEC), cloud, etc.). In addition, attempts are continuing to further strengthen connectivity between devices, further optimize networks, promote the softwareization of network entities, and increase the openness of wireless communication through the design of new protocols to be used in 6G communication systems, the implementation of hardware-based security environments, the development of mechanisms for the safe utilization of data, and the development of technologies regarding privacy maintenance methods. Due to the research and development of such 6G communication systems, it is expected that a new dimension of hyper-connected experience will become possible through the hyper-connectivity of 6G communication systems, which encompasses not only connections between objects but also connections between people and objects. Specifically, it is projected that 6G communication systems will enable the provision of services such as truly immersive extended reality (truly immersive XR), high-fidelity mobile holograms, and digital replicas. Furthermore, services such as remote surgery, industrial automation, and emergency response, which are provided through 6G communication systems with enhanced security and reliability, will be applied in various fields including