KR-20260067837-A - SEMICONDUCTOR NANOPARTICLE, PRODCUTION METHOD THEREOF, ELECTRONIC DEVICE INCLUDING THE SAME

Abstract

The invention relates to nanoparticles, a method for manufacturing the same, and an electronic device including the same. The nanoparticles include semiconductor nanocrystals comprising zinc, indium, and selenium, wherein the molar ratio of indium to selenium in the semiconductor nanocrystals is 0.1 or more and 0.5 or less, the nanoparticles do not contain cadmium, and the nanoparticles are configured to emit a first light, wherein the emission peak wavelength of the first light is 480 nm or more and 700 nm or less.

Inventors

• 김선영
• 채수인
• 김민호
• 손대용
• 양승임
• 김택훈
• 조은석
• 권수경
• 김태곤
• 원나연

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260513

Application Date

20241106

Claims (19)

1. As nanoparticles, The nanoparticle comprises a semiconductor nanocrystal containing zinc, indium, and selenium, wherein the molar ratio of indium to selenium in the semiconductor nanocrystal is 0.1 or more and 0.5 or less, the nanoparticle does not contain cadmium, and the nanoparticle is configured to emit a first light, wherein the emission peak wavelength of the first light is 480 nm or more and 700 nm or less.
2. In paragraph 1, The semiconductor nanocrystals above are nanoparticles that do not contain silver, copper, manganese, cobalt, or a combination thereof.
3. In paragraph 1, In the above semiconductor nanocrystal, Nanoparticles with a molar ratio of indium to selenium (In/Se) of 0.13 or greater and 0.43 or less.
4. In paragraph 1, In the above semiconductor nanocrystal, Nanoparticles in which the molar ratio of indium to the total sum of zinc and indium (In/(Zn+In)) is 0.02 or greater and 0.8 or less.
5. In paragraph 1, In the above semiconductor nanocrystal, Nanoparticles with a molar ratio of zinc to selenium (Zn/Se) of 0.35 or greater and 1.34 or less.
6. In paragraph 1, In the above semiconductor nanocrystal, Nanoparticles having a charge balance value of 0.8 or greater and 1.8 or less obtained by the following formula: Charge Balance = {2x[Zn] + 3x[In]}/(2x[Se]) Here, [Zn], [In], and [Se] are the molar contents of zinc, indium, and selenium, respectively, within the semiconductor nanocrystal or nanoparticle.
7. In paragraph 1, The first light has an emission peak full width at half maximum of 50 nm or more and 200 nm or less, and The emission peak wavelength of the first light is a nanoparticle having a wavelength of 500 nm or more and 680 nm or less.
8. In paragraph 1, The above nanoparticles are nanoparticles in which the absorption edge in the UV-Vis absorption spectrum is in the range of 380 nm or more and 540 nm or less.
9. In paragraph 1, In the UV-Vis absorption spectrum, the nanoparticles are nanoparticles having a first absorption peak wavelength of 380 nm or more and 500 nm or less.
10. In paragraph 1, The above nanoparticles are nanoparticles having a pyramid shape.
11. A method for manufacturing the nanoparticles of claim 1, The above method comprises contacting an indium precursor, a selenium precursor, and a zinc precursor in the presence of an organic ligand in an organic solvent at a reaction temperature, wherein the reaction temperature is 230°C or higher and 380°C or lower.
12. In Paragraph 11, The above method comprises the steps of: preparing a reaction solution containing the indium precursor, the selenium precursor, and the organic ligand in the organic solvent; heating the reaction solution to a reaction temperature; and adding the zinc precursor to the reaction solution.
13. In Paragraph 11, The above reaction solution is a method that does not contain dodecanethiol.
14. In Paragraph 11, A method in which the organic solvent comprises a C5 to C40 primary amine compound, and the content of the primary amine compound is 30% or more and 100% or less based on the total volume of the organic solvent.
15. In Paragraph 11, A method in which the reaction temperature is 280°C or higher and 320°C or lower.
16. A composition comprising the nanoparticles and liquid vehicle of claim 1.
17. A composite comprising a matrix and a plurality of nanoparticles dispersed within the matrix, wherein the plurality of nanoparticles comprises the nanoparticles of claim 1.
18. A display device comprising the nanoparticles of claim 1.
19. A first electrode and a second electrode spaced apart from each other; An electronic device comprising an active layer disposed between the first electrode and the second electrode, The above active layer is an electronic device comprising the nanoparticles of claim 1.

Description

Semiconductor nanoparticle, method of production thereof, and electronic device including the same The invention relates to semiconductor nanoparticles, a method for manufacturing the same, and an electronic device comprising the same. Semiconductor nanoparticles can exhibit characteristics different from bulk materials in terms of physical properties (energy bandgap, melting point, etc.) known as intrinsic properties of the material. For example, semiconductor nanoparticles can be configured to emit light upon energy excitation (e.g., light irradiation or voltage application). Such luminescent nanoparticles can find potential applications in various devices (e.g., electronic devices). From an environmental perspective, it is desirable to develop luminescent nanoparticles that can realize enhanced luminescent properties and do not contain harmful heavy metals such as cadmium. Figure 1 schematically illustrates a pattern formation process (photolithography method) using an ink composition of one embodiment. Figure 2 schematically illustrates a pattern formation process (inkjet method) using an ink composition of one embodiment. FIG. 3a shows a schematic cross-sectional view of a color conversion panel of a non-limiting embodiment. FIG. 3b is a cross-sectional view of an electronic device (display device) including a color conversion panel according to a non-limiting embodiment. FIG. 4a is a perspective view showing an example of a display panel including a color conversion panel according to one embodiment. FIG. 4b is an exploded view of a display element according to another embodiment. Fig. 4c is a cross-sectional view of the display panel of Fig. 4a. Fig. 5a is a plan view showing an example of a pixel arrangement of the display panel of Fig. 4a. FIGS. 5B, FIGS. 5C, FIGS. 5D, and FIGS. 5E are cross-sectional views showing examples of light-emitting elements, respectively. Figure 6 is a cross-sectional view of the display panel of Figure 5a cut along the line IV-IV. FIG. 7 shows a schematic cross-sectional view of a display element (e.g., liquid crystal display element) according to one embodiment. FIG. 8a shows a schematic cross-sectional view of an electronic device according to one embodiment. FIG. 8b shows a schematic cross-sectional view of an electronic device according to one embodiment. FIG. 8c shows a schematic cross-sectional view of an electronic device according to one embodiment. FIG. 9a shows the photoluminescence spectra of nanoparticles synthesized in Example 2 (In 10%), Example 3 (In 15%), and Comparative Example 1 (In 0%). Figure 9b shows the photoluminescence spectra of nanoparticles synthesized in Example 4 (In 17%), Example 5 (In 20%), and Example 6 (In 23%). FIGS. 10a and FIGS. 10b show the UV-Vis absorption spectra of nanoparticles synthesized in Examples 1 to 3 and Comparative Example 1. Figure 11a shows a transmission electron microscope image of nanoparticles synthesized in Example 1 (In 5%). Figure 11b shows a transmission electron microscope image of nanoparticles synthesized in Example 2 (In 10%). The advantages and features of the technology described below, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the forms of implementation are not limited to the embodiments disclosed below. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in a meaning that is commonly understood by those skilled in the art. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. Throughout the specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Throughout the specification, the same reference numerals have been used for similar parts. When a part such as a layer, membrane, region, or plate is said to be "on" another part, this includes not only the case where it is "directly on" another part, but also the case where there is another part in between. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between. In addition, the singular form includes the plural form unless specifically mentioned otherwise in the phrase. Here, the statement that it does not contain cadmium (or other toxic heavy metals) may refer to a concentration of cadmium (or said heavy metal) of 100 ppm (by weight) or less, 50 ppm or less, 10 ppm or less, 1 ppm or less, 0.1 ppm or less, 0.01 ppm or less, or nearly 0. In one embodiment, cadmium (or said heavy metal) is substantially absent, or even if it is present, it is present in an amount below the