KR-20260067838-A - NON-VOLATILE MEMORY DEVICE, OPERATING METHOD OF THE SAME DEVICE AND STORAGE DEVICE INCLUDING THE SAME DEVICE

KR20260067838AKR 20260067838 AKR20260067838 AKR 20260067838AKR-20260067838-A

Abstract

A non-volatile memory device, a method of operating the non-volatile memory device, and a storage device including the non-volatile memory device are provided. The non-volatile memory device includes a memory cell array including a plurality of first memory cells connected to a first word line, a voltage generator providing a plurality of integrity verification voltages to a first integrity verification line electrically connected to the first word line, and a control logic receiving a residual voltage of the first word line from the first integrity verification line in response to the provision of the plurality of integrity verification voltages to the first integrity verification line.

Inventors

박상인

Assignees

삼성전자주식회사

Dates

Publication Date: 20260513
Application Date: 20241106

Claims (10)

A memory cell array comprising a plurality of first memory cells connected to a first word line; A voltage generator that provides a plurality of integrity verification voltages to a first integrity verification line electrically connected to the first word line; and Control logic for receiving the residual voltage of the first word line from the first integrity verification line in response to the provision of the plurality of integrity verification voltages to the first integrity verification line; A non-volatile memory device including
In paragraph 1, The memory cell array further includes a plurality of second memory cells connected to a second word line arranged adjacent to the first word line, and A non-volatile memory device in which, in response to the completion of a memory operation for the plurality of second memory cells, the voltage generator provides the plurality of integrity verification voltages to the first integrity verification line.
In paragraph 2, A plurality of integrity verification voltages include sequentially higher first to nth integrity verification voltages, and The above voltage generator is a non-volatile memory device that preferentially provides the nth integrity verification voltage among the plurality of integrity verification voltages to the first integrity verification line.
In paragraph 1, A non-volatile memory device further comprising an integrity verification capacitor connected to the first integrity verification line and a wordline capacitor connected to the first wordline.
In paragraph 4, The range of the capacitance of the first integrity verification capacitor and the capacitance of the wordline capacitor is 1 to x, and A non-volatile memory device in which x is a real number having a range of 75 to 125.
In paragraph 4, A plurality of integrity verification voltages include a first integrity verification voltage and a second integrity verification voltage higher than the first integrity verification voltage, and In response to the provision of the first integrity verification voltage to the first integrity verification line, a first charge sharing operation is performed between the integrity verification capacitor and the word line capacitor, and A non-volatile memory device in which a second charge sharing operation is performed between the integrity verification capacitor and the word line capacitor in response to the provision of the second integrity verification voltage to the first integrity verification line.
In paragraph 1, The above control logic is a non-volatile memory device comprising a voltage change value generator that generates a voltage change value between the previous residual voltage of the first word line received prior to the provision of the first integrity verification voltage among the plurality of integrity verification voltages and the residual voltage of the first word line received after the provision of the first integrity verification voltage.
Step of performing a memory operation on a target wordline; A step of providing a first integrity verification voltage to an integrity verification line electrically connected to an adjacent word line positioned adjacent to the target word line in response to the completion of the above memory operation; A step of performing a first charge sharing operation to share charge between a wordline capacitor connected to the adjacent wordline and an integrity verification capacitor accumulated by the first integrity verification voltage; A step of generating a first voltage change value of the residual voltage for the adjacent word line in response to the first charge sharing operation; and A step of detecting a determination residual voltage for the adjacent word line based on the first voltage change value; Method of operation of a non-volatile memory device.
In paragraph 8, A method of operating a non-volatile memory device, further comprising the step of determining the integrity of the adjacent wordline based on the above-mentioned residual voltage and a predetermined threshold voltage.
In paragraph 8, After providing the first integrity verification voltage, a step of providing a second integrity verification voltage lower than the first integrity verification voltage to the integrity verification line; A step of performing a second charge sharing operation to share charge between the wordline capacitor and the integrity verification capacitor accumulated by the second integrity verification voltage; and The method further includes the step of generating a second voltage change value in response to the second charge sharing operation described above, The above-mentioned residual voltage is a method of operation of a non-volatile memory device detected based on the first and second voltage change values.

Description

Non-volatile memory device, operating method of the same device, and storage device including the same device The present disclosure relates to a non-volatile memory device, a method of operating the non-volatile memory device, and a storage device including the non-volatile memory device. Semiconductor memory devices can be classified into volatile memory devices and non-volatile memory devices depending on whether stored data is lost when the power supply is interrupted. A non-volatile memory device includes memory cells connected to word lines and bit lines, and various types of voltages are applied to multiple word lines while a program/read operation is performed on the memory cells. When the program/read operation is completed, a recovery operation is performed to discharge the word lines, and if the recovery operation is not performed properly, it may cause disturbance to surrounding memory cells. In particular, some of the multiple word lines may have inherent defects, which may prevent the recovery operation from being performed properly, and in order to ensure the reliability of the non-volatile memory device, it is necessary to select and screen out defective word lines. FIG. 1 is a block diagram showing a storage device according to one embodiment. FIG. 2 is a block diagram showing a controller according to one embodiment. FIG. 3 is a block diagram showing a non-volatile memory device according to one embodiment. FIG. 4 is a diagram illustrating the three-dimensional structure of a memory cell array according to one embodiment. FIG. 5 is a diagram illustrating the connection relationship of a word line, an integrity check line, a voltage generator, and control logic according to one embodiment. FIG. 6 is a circuit diagram showing a voltage change value generator according to one embodiment. FIG. 7 is a block diagram showing a voltage change value generator according to one embodiment. FIG. 8 is a flowchart for explaining the operation method of a non-volatile memory device according to one embodiment. FIG. 9 is a timing diagram for explaining the operation method of a non-volatile memory device according to one embodiment. FIGS. 10 to 16 are drawings for explaining a method of operation of a non-volatile memory device according to one embodiment. FIG. 17 is a block diagram showing a data storage device, which is an example of a storage device according to one embodiment. FIG. 18 is a block diagram showing a computing system including a storage device according to one embodiment. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts unrelated to the explanation have been omitted, and throughout the specification, identical or similar components are assigned identical or similar reference numerals. Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, throughout the specification, when it is stated that "one component is placed adjacent to another component," it means that one component and another component are placed adjacently such that a component identical or similar to one component is not placed between one component and another component, or that one component and another component are in contact with each other. For example, the placement of identical or similar 'X' and 'Y' adjacently includes that 'X' and 'Y' are adjacent such that a component identical or similar to 'X' is not placed between 'X' and 'Y', or that 'X' and 'Y' are in contact with each other. Furthermore, where it is stated that one component is "connected," "coupled," or "connected" to another component, it should be understood that while said components may be directly connected or connected to each other, another component may be "interposed" between each component, or that each component may be "connected," "coupled," or "connected" through another component. Additionally, when it is stated that a part is electrically coupled with another part, this includes not only cases where they are directly connected but also cases where they are connected with another component in between. Furthermore, even if a specific number described in a claim is explicitly cited within the claim, it should not be understood that the limitation of that specific number does not exist in claims where such citation is absent. For example, to aid understanding, subsequent dependent claims may include phrases such as "at least one" and "one or more." However, the use of such phrases should not be understood as a limitation described by the ambi