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KR-20260067885-A - SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

KR20260067885AKR 20260067885 AKR20260067885 AKR 20260067885AKR-20260067885-A

Abstract

The present invention relates to a composition for a semiconductor photoresist comprising an organometallic compound; a polymer comprising a first structural unit represented by the chemical formula M-1 and a second structural unit represented by the chemical formula 2 or the following chemical formula 3; and a solvent, and a method for forming a pattern using the same. The descriptions of the above chemical formulas M-1, 2, and 3 are as described in the specification.

Inventors

  • 문성일
  • 김영근
  • 임상균
  • 한미연

Assignees

  • 삼성에스디아이 주식회사

Dates

Publication Date
20260513
Application Date
20241106

Claims (20)

  1. Organometallic compounds; A polymer comprising a first structural unit represented by the following chemical formula M-1, and a second structural unit represented by the following chemical formula 2 or the following chemical formula 3; and menstruum A composition for semiconductor photoresist comprising: [Chemical Formula M-1] [Chemical Formula 2] [Chemical Formula 3] In the above chemical formulas M-1, 2, and 3, R1 to R3 are each independently hydrogen or a substituted or unsubstituted C1 to C10 alkyl group, and L1 to L3 are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, or a combination thereof, and X1 is a single bond, -O-, -S-, -S(=O)-, -S(=O) 2- , -C(=O)-, -C(=O)O-, -OC(=O), -OC(=O)O-, -NRa- (where Ra is hydrogen, deuterium, or a substituted or unsubstituted C1 to C10 alkyl group), or a combination thereof, X 2 is a single bond, -C(=O)-, or a substituted or unsubstituted C1 to C10 alkylene group, and X3 is a single bond, -L4 -O- (wherein L4 is a substituted or unsubstituted C1 to C10 alkylene group) or a substituted or unsubstituted C1 to C10 alkylene group, and R 4 is hydrogen, fluorine, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkyl group, or a combination thereof, and At least one of R4 , L1 , and L2 comprises fluorine and a hydroxyl group, and R5 is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and R6 to R8 are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and m1 and m2 are each independently one of integers from 1 to 4, and * is a connection point.
  2. In Paragraph 1, A composition for a semiconductor photoresist, wherein the first structural unit is represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, R1 is hydrogen or a substituted or unsubstituted C1 to C10 alkyl group, and R c , R d , R e , R f , and R 4 are each independently hydrogen, fluorine, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkyl group, or a combination thereof, and m3 and m4 are each independently one of integers from 1 to 10, and X1 is a single bond, -O-, -S-, -S(=O)-, -S(=O) 2- , -C(=O)-, -C(=O)O-, -OC(=O), -OC(=O)O-, -NRa- (where Ra is hydrogen, deuterium, or a substituted or unsubstituted C1 to C10 alkyl group), or a combination thereof, At least one of R c , R d , R e , R f , and R 4 includes fluorine and a hydroxyl group.
  3. In Paragraph 1, A composition for a semiconductor photoresist, wherein the first structural unit is at least one selected from Group I below: [Group I] In the above Group I, R1 is independently a hydrogen or methyl group, and * is a linkage point.
  4. In Paragraph 1, A composition for a semiconductor photoresist, wherein the above chemical formula 2 is represented by the following chemical formula 2-1 or chemical formula 2-2: [Chemical Formula 2-1] [Chemical Formula 2-2] In the above chemical formulas 2-1 and 2-2, R2 , R5 , R6 , and m1 are as defined in paragraph 1, and * is a connection point.
  5. In Paragraph 4, A composition for a semiconductor photoresist, wherein the above chemical formula 2-1 is represented by any one of the following chemical formulas 2-1-(i) to 2-1-(iv): [Chemical Formula 2-1-(i)][Chemical Formula 2-1-(ii)][Chemical Formula 2-1-(iii)][Chemical Formula 2-1-(iv)] In the above chemical formulas 2-1-(i) to 2-1-(iv), R2 is hydrogen or a methyl group, and R5 , R5a, and R5b are each independently hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and R6a , R6b , R6c , and R6d are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and * is a connection point.
  6. In Paragraph 4, A composition for a semiconductor photoresist, wherein the above chemical formula 2-2 is represented by any one of the following chemical formulas 2-2-(i) to 2-2-(iii): [Chemical Formula 2-2-(i)] [Chemical Formula 2-2-(ii)] [Chemical Formula 2-2-(iii)] In the above chemical formulas 2-2-(i) to 2-2-(iii), R2 is hydrogen or a methyl group, and R5 is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and R6a , R6b , R6c , and R6d are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and * is a connection point.
  7. In Paragraph 1, A composition for a semiconductor photoresist, wherein the above chemical formula 3 is represented by the following chemical formula 3-1 or chemical formula 3-2: [Chemical Formula 3-1] [Chemical Formula 3-2] In the above chemical formulas 3-1 and 3-2, R3 , R8 , R7 , L4 , and m2 are as defined in paragraph 1, and R 17 and R 18 are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and m5 is one of the integers from 0 to 10, and * is a connection point.
  8. In Paragraph 7, A composition for a semiconductor photoresist, wherein the above chemical formula 3-1 is represented by any one of the following chemical formulas 3-1-(i) to 3-1-(iii): [Chemical Formula 3-1-(i)] [Chemical Formula 3-1-(ii)] [Chemical Formula 3-1-(iii)] In the above chemical formulas 3-1-(i) to 3-1-(iii), R3 is hydrogen or a methyl group, and R7 is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and R 17 and R 18 are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and R 8a , R 8b , R 8c , and R 8d are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and * is a connection point.
  9. In Paragraph 7, A composition for a semiconductor photoresist, wherein the above chemical formula 3-2 is represented by any one of the following chemical formulas 3-2-(i) to 3-2-(iii): [Chemical Formula 3-2-(i)] [Chemical Formula 3-2-(ii)] [Chemical Formula 3-2-(iii)] In the above chemical formulas 3-2-(i) to 3-2-(iii), R3 is hydrogen or a methyl group, and R7 is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and L 4 is a substituted or unsubstituted C1 to C10 alkylene group, and R 8a , R 8b , R 8c , and R 8d are each independently hydrogen, a halogen, a hydroxyl group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and * is a connection point.
  10. In Paragraph 1, A composition for a semiconductor photoresist, wherein the second structural unit is at least one selected from Group II below: [Group II] In the above Group II, R2 and R3 are each independently hydrogen or methyl groups, and * is a linkage point.
  11. In Paragraph 1, A composition for a semiconductor photoresist, wherein the polymer comprises 30 to 90 mol% of the first structural unit and 10 to 70 mol% of the second structural unit.
  12. In paragraph 1, A composition for a resist upper film having a weight average molecular weight of 1,000 g/mol to 50,000 g/mol of the polymer.
  13. In paragraph 1, A semiconductor photoresist composition in which the above polymer is included in an amount of 0.1 to 10 weight% with respect to 100 weight% of the semiconductor photoresist composition.
  14. In paragraph 1, A semiconductor photoresist composition in which the organometallic compound is included in an amount of 0.5% to 30% by weight based on 100% by weight of the semiconductor photoresist composition.
  15. In paragraph 1, A composition for a semiconductor photoresist further comprising an additive of a surfactant, a crosslinking agent, a leveling agent, an organic acid, a quencher, or a combination thereof.
  16. In Paragraph 1, A composition for a semiconductor photoresist, wherein the above organometallic compound is an organotin compound comprising at least one of an organooxy group and an organocarbonyloxy group.
  17. In Paragraph 1, The above organometallic compound is a composition for a semiconductor photoresist represented by the following chemical formula 4: [Chemical Formula 4] In the above chemical formula 4, R 10 is selected from substituted or unsubstituted C1 to C20 alkyl groups, substituted or unsubstituted C3 to C20 cycloalkyl groups, substituted or unsubstituted C2 to C20 alkenyl groups, substituted or unsubstituted C2 to C20 alkynyl groups, substituted or unsubstituted C6 to C30 aryl groups, and substituted or unsubstituted C6 to C30 arylalkyl groups. R 11 to R 13 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 arylalkyl group, alkoxy and aryloxy (-OR g , where R g is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), a carboxyl group (-OC(=O)R h , where R h is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or an unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), alkylamido or dialkylamido (-NR i R j , where R i and R j are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), amidato (-NR k (COR l ), where R k and R l are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or an unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), amidinato (-NR m C(NR n )R o , where R m , R n and R o are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), alkylthio and aryltio (-SR p , where R p is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or an unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof) or a thiocarboxyl group (-SC(=O)R q , R q is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), and At least one of R 11 to R 13 is an alkoxy and aryloxy (-OR g , where R g is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), a carboxyl group (-OC(=O)R h , where R h is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), an alkylamido or dialkylamido (-NR i R j , where R i and R j are Each independently is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), amidato (-NR k (COR l ), where R k and R l are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), amidato (-NR m C(NR n )R o , where R m , R n and R o are each independently hydrogen, a substituted or an unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), alkylthio and aryltio (-SR p , where R p is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof) or a thiocarboxyl group (-SC(=O)R q , where R q is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It is selected from unsubstituted C2 to C20 alkenyl groups, substituted or unsubstituted C2 to C20 alkinyl groups, substituted or unsubstituted C6 to C30 aryl groups, or combinations thereof.
  18. In Paragraph 17, A composition for a semiconductor photoresist, wherein at least one of the above R 11 to R 13 is selected from alkoxy and aryloxy (-OR g , where R g is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), and a carboxyl group (-OC(=O)R h , where R h is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof).
  19. In Paragraph 18, The above R 10 is a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 aliphatic unsaturated organic group comprising one or more double or triple bonds, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C4 to C20 heteroaryl group, a carbonyl group, an ethoxy group, a propoxy group, or a combination thereof, and R g is a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof, and A composition for a semiconductor photoresist in which R h is hydrogen, a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, a substituted or unsubstituted C6 to C20 aryl group, or a combination thereof.
  20. In Paragraph 1, The above organometallic compound is a composition for a semiconductor photoresist represented by the following chemical formula 5 or chemical formula 6: [Chemical Formula 5] R 14 z SnO (2-(z/2)-(x/2)) (OH) x In the above chemical formula 5, R 14 is a C1 to C31 hydrocarbyl group, where 0 < z ≤ 2 and 0 < (z+x) ≤ 4; [Chemical Formula 6] R 15 a1 Sn b1 X c1 Y d1 In the above chemical formula 6, R 15 is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group comprising one or more double or triple bonds, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, a carbonyl group, an ethylene oxide group, a propylene oxide group, or a combination thereof, and X is sulfur (S), selenium (Se), or tellurium (Te), and Y is -OR r or -OC(=O)R s , and The above R r is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and Rs is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and The above a1, b1, c1 and d1 are each independently integers from 1 to 20.

Description

Semiconductor Photoresist Composition and Method of Forming Patterns Using the Composition The present invention relates to a composition for semiconductor photoresist and a method for forming a pattern using the same. EUV (Extreme Ultraviolet) lithography is attracting attention as one of the key technologies for manufacturing next-generation semiconductor devices. EUV lithography is a pattern formation technology that uses EUV light with a wavelength of 13.5 nm as an exposure light source. It has been demonstrated that EUV lithography can form extremely fine patterns (e.g., 20 nm or less) during the exposure process of semiconductor device manufacturing. The implementation of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists capable of performing at spatial resolutions of 16 nm or less. Currently, traditional chemically amplified (CA) photoresists are striving to meet specifications for resolution, photospeed, feature roughness, and line edge roughness (LER) for next-generation devices. Intrinsic image blur caused by acid-catalyzed reactions occurring in these polymeric photoresists limits resolution at small feature sizes, a fact that has long been known in electron beam lithography. Although chemically amplified (CA) photoresists are designed for high sensitivity, they may face more difficulties under EUV exposure, partly because their typical elemental makeup lowers the absorbance of the photoresists at a wavelength of 13.5 nm, thereby reducing sensitivity. CA photoresists can also suffer from roughness issues at small feature sizes, and experiments have shown that line edge roughness (LER) increases as photospeed decreases, partly due to the nature of acid catalyst processes. Due to the defects and problems of CA photoresists, there is a demand in the semiconductor industry for new types of high-performance photoresists. Inorganic photosensitive compositions have been studied to overcome the disadvantages of the chemically amplified organic photosensitive compositions described above. Inorganic photosensitive compositions are primarily used for negative tone patterning that is resistant to removal by developer compositions due to chemical modification by non-chemical amplification mechanisms. Inorganic compositions contain inorganic elements that have a higher EUV absorption rate compared to hydrocarbons, so sensitivity can be ensured even by non-chemical amplification mechanisms, and they are known to be less sensitive to stochastic effects, resulting in lower line edge roughness and a smaller number of defects. Inorganic photoresists based on tungsten and peroxopolyacids of tungsten mixed with niobium, titanium, and/or tantalum have been reported for use in radiation-sensitive materials for patterning (US5061599; H. Okamoto, T. Iwayanagi, K. Mochiji, H. Umezaki, T. Kudo, Applied Physics Letters, 49(5), 298-300, 1986). These materials were effective for patterning large features in bilayer configurations using deep UV, X-ray, and electron beam sources. More recently, impressive performance was shown when using cationic hafnium metal oxide sulfate (HfSOx) materials with a peroxo complexing agent to image 15 nm half-pitch (HP) by projection EUV lithography (US2011-0045406; J. K. Stowers, A. Telecky, M. Kocsis, B. L. Clark, D. A. Keszler, A. Grenville, C. N. Anderson, P. P. Naulleau, Proc. SPIE, 7969, 796915, 2011). This system has demonstrated the best performance for non-CA photoresists and possesses a speed of light approaching the requirements for viable EUV photoresists. However, hafnium metal oxide sulfate materials with peroxo complexes have several practical drawbacks. First, these materials are coated in highly corrosive sulfuric acid/hydrogen peroxide mixtures, and shelf-life stability is poor. Second, as they are composite mixtures, structural modifications to improve performance are not easy. Third, they must be developed in extremely high concentrations, such as TMAH (tetramethylammonium hydroxide) solutions of about 25 wt%. Recently, active research has been conducted as it has become known that molecules containing tin exhibit excellent absorption of extreme ultraviolet light. In the case of organotin polymers, which are one such example, alkyl ligands dissociate due to light absorption or secondary electrons generated by it, and through cross-linking via oxo bonds with surrounding chains, negative tone patterning that cannot be removed by organic developers is possible. While such organotin polymers have demonstrated a dramatic improvement in sensitivity while maintaining resolution and line edge roughness, further improvement of the aforementioned patterning characteristics is required for commercialization. FIG. 1 is a cross-sectional view illustrating a method for forming a pattern using a composition for a semiconductor photoresist according to one embodiment. Hereinafter, embodiments of the present invention will be described in detail with re