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KR-20260068025-A - PLASMA PROCESSING SYSTEM AND EDGE RING REPLACEMENT METHOD

KR20260068025AKR 20260068025 AKR20260068025 AKR 20260068025AKR-20260068025-A

Abstract

[Problem] In a plasma processing system in which both an edge ring and a cover ring are used, when replacing the edge ring, replacement while supported by the cover ring and replacement of the edge ring alone are selectively performed. [Solution] A plasma processing device having a substrate support, a processing vessel configured to allow for pressure reduction and having the substrate support provided therein, and performing plasma processing on a substrate on the substrate support; a conveying device having a support member that supports the substrate, and inserting and removing the support member into and out of the processing vessel to bring the substrate into and out of the processing vessel, and a control device; wherein the substrate support has a substrate mounting surface on which the substrate is mounted, an annular member mounting surface on which a cover ring covering the outer surface of an edge ring arranged to surround the substrate mounted on the substrate mounting surface is mounted while supporting the edge ring, a lifter that is able to move up and down so as to protrude from a portion overlapping with the cover ring when viewed from a plane on the annular member mounting surface, a lifting mechanism for lifting the lifter, another lifter that is able to move up and down so as to protrude from the substrate mounting surface, and another lifting mechanism for lifting the other lifter; wherein the support member of the conveying device is capable of supporting the cover ring that supports the edge ring, and furthermore, of the edge ring A jig having a portion longer than its inner diameter is configured to support the jig, and the control device comprises the following steps: raising the lifter to transfer the covering ring supporting the edge ring from the annular member mounting surface to the lifter; moving the jig supported by the support member between the substrate mounting surface, the annular member mounting surface, and the covering ring supporting the edge ring; raising the other lifter to transfer the jig from the support member to the other lifter; after the support member is retracted, moving the lifter and the other lifter relatively to transfer the edge ring from the covering ring to the jig; lowering only the lifter to transfer the covering ring from the lifter to the annular member mounting surface; moving the support member between the covering ring and the jig supporting the edge ring, then lowering the other lifter to transfer the jig supporting the edge ring from the other lifter to the support member; and moving the support member from the processing container The lifting mechanism, the conveying device, and the other moving mechanism are controlled so that the process of extracting and removing the jig supporting the edge ring from the processing container is executed.

Inventors

  • 마츠우라 신
  • 가토 겐이치

Assignees

  • 도쿄엘렉트론가부시키가이샤

Dates

Publication Date
20260513
Application Date
20260407
Priority Date
20200303

Claims (20)

  1. In a plasma treatment system, Equipped with a plasma processing device and a control device, The above plasma treatment device is, Processing container and, A substrate support provided within the processing vessel, comprising: an electrostatic chuck having a central portion supporting a substrate on its upper surface; a first ring located outside the central portion to surround the central portion; a second ring surrounding the first ring, with a portion located below the first ring; and a quartz support having a diameter larger than the diameter of the outermost portion of the electrostatic chuck and supporting the bottom surface of the outer portion of the second ring. A lifter for raising and lowering the first ring and the second ring, having the lifter provided on the inner side of the outermost circumference of the support and also below the second ring, The control device controls the lifter to raise the second ring so that the first ring is supported and lifted by the second ring. Plasma processing system.
  2. In Article 1, The diameter of the innermost part of the second ring is smaller than the diameter of the outermost part of the first ring. Plasma processing system.
  3. In Article 1 or Article 2, The second ring is such that, when viewed in a plane, at least a portion of the inner circumference of the second ring overlaps with at least a portion of the outer circumference of the first ring. Plasma processing system.
  4. In any one of paragraphs 1 to 3, The second ring covers the outer surface of the first ring. Plasma processing system.
  5. In any one of paragraphs 1 to 4, A projection is formed on either the lower surface of the first ring or the upper surface of the second ring, and a concave portion on the other side that engages with the projection. Plasma processing system.
  6. In Article 5, The above protrusion and the above concave portion are formed along the circumferential direction of the first ring and the second ring. Plasma processing system.
  7. In any one of paragraphs 1 to 6, The first ring above is an edge ring. Plasma processing system.
  8. In Article 7, The second ring is a cover ring that covers the outer surface of the edge ring. Plasma processing system.
  9. In any one of paragraphs 1 through 8, The first ring above is formed of Si or SiC. Plasma processing system.
  10. In any one of paragraphs 1 through 9, A concave portion is formed on the lower surface of the second ring above to engage with the upper portion of the lifter. Plasma processing system.
  11. In any one of Articles 1 to 10, The plasma processing device has another lifter that is able to move up and down so as to protrude from the upper surface of the central portion of the electrostatic chuck. Plasma processing system.
  12. An electrostatic chuck having a central portion supporting a substrate on its upper surface, a first ring located outside the central portion to surround the central portion, a second ring surrounding the first ring with a portion located below the first ring, and a quartz support having a diameter larger than the diameter of the outermost portion of the electrostatic chuck and supporting the bottom surface of the outer portion of the second ring, A lifter for raising and lowering the first ring and the second ring, having the lifter provided on the inner side of the outermost circumference of the support and also below the second ring, The lifter is capable of protruding from the support and also raises the second ring so that when raised, the first ring is supported and lifted by the second ring. Circuit board support.
  13. In Article 12, The diameter of the innermost part of the second ring is smaller than the diameter of the outermost part of the first ring. Circuit board support.
  14. In Article 12 or Article 13, The second ring is such that, when viewed in a plane, at least a portion of the inner circumference of the second ring overlaps with at least a portion of the outer circumference of the first ring. Circuit board support.
  15. In any one of paragraphs 12 to 14, The second ring covers the outer surface of the first ring. Circuit board support.
  16. In any one of paragraphs 12 to 15, A projection is formed on either the lower surface of the first ring or the upper surface of the second ring, and a concave portion on the other side that engages with the projection. Circuit board support.
  17. In Article 16, The above protrusion and the above concave portion are formed along the circumferential direction of the first ring and the second ring. Circuit board support.
  18. In any one of paragraphs 12 through 17, The first ring above is an edge ring. Circuit board support.
  19. In Article 18, The second ring is a cover ring that covers the outer surface of the edge ring. Circuit board support.
  20. In any one of paragraphs 12 through 19, The first ring above is formed of Si or SiC. Circuit board support.

Description

Plasma Processing System and Edge Ring Replacement Method The present disclosure relates to a plasma processing system and a method for exchanging an edge ring. Patent Document 1 discloses a substrate processing apparatus that places a substrate in a processing chamber, arranges a focus ring to surround the substrate, and performs plasma processing on the substrate. This substrate processing apparatus comprises a mounting base having a susceptor having a substrate mounting surface for mounting the substrate and a focus ring mounting surface for mounting the focus ring, and a plurality of positioning pins. The positioning pins are formed in a pin shape by a material that expands in the radial direction by heating, are mounted on the focus ring so as to protrude from its lower surface, are inserted into a positioning hole formed on the focus ring mounting surface of the susceptor, and position the focus ring by expanding in the radial direction by heating and fitting it. Additionally, the substrate processing apparatus disclosed in Patent Document 1 comprises a lifter pin and a return arm. The lifter pin is provided on the mounting base so as to protrude from the focus ring mounting surface, and lifts the focus ring by each positioning pin to detach it from the focus ring mounting surface. The return arm is provided on the outside of the processing room, and passes through the outgoing and incoming ports provided in the processing room to exchange the focus ring with the lifter pin while the positioning pin is attached. FIG. 1 is a plan view illustrating a schematic configuration of a plasma processing system according to Embodiment 1. Figure 2 is a cross-sectional view illustrating a schematic configuration of the processing module of Figure 1. Figure 3 is a partial enlarged view of Figure 2. Figure 4 is a partial cross-sectional view of a part different from Figure 2 along the circumferential direction of the wafer support. Figure 5 is a schematic diagram illustrating the state within the processing module during the mounting process of the edge ring. Figure 6 is a schematic diagram illustrating the state within the processing module during the mounting process of the edge ring. Figure 7 is a schematic diagram illustrating the state within the processing module during the mounting process of the edge ring. Figure 8 is a drawing illustrating another example of a lifting pin. Figure 9 is a diagram illustrating another example of an electrostatic chuck. FIG. 10 is a partially enlarged cross-sectional view illustrating a schematic configuration of a wafer support as a substrate support according to embodiment 2. FIG. 11 is a partially enlarged cross-sectional view illustrating a schematic configuration of a wafer support as a substrate support according to embodiment 3. FIG. 12 is a plan view illustrating a schematic configuration of a plasma processing system according to embodiment 4. FIG. 13 is a partially enlarged cross-sectional view illustrating a schematic configuration of a wafer support as a substrate support according to embodiment 4. FIG. 14 is a partial enlarged cross-sectional view illustrating another example of a wafer support. FIG. 15 is a partial enlarged cross-sectional view illustrating another example of a wafer support. FIG. 16 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 17 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 18 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 19 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 20 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 21 is a schematic diagram illustrating the state within the processing module during the separation process of the edge ring group. FIG. 22 is a schematic diagram illustrating the state within a processing module during the separation process of a covering ring that supports an edge ring. FIG. 23 is a schematic diagram illustrating the state within the processing module during the separation process of the covering ring supporting the edge ring. FIG. 24 is a schematic diagram illustrating the state within a processing module during the separation process of a covering ring that supports an edge ring. FIG. 25 is a schematic diagram illustrating the state within a processing module during the separation process of a covering ring that supports an edge ring. FIG. 26 is a schematic diagram illustrating the state within a processing module during the separation process of a covering ring that supports an edge ring. FIG. 27 is a schematic diagram illustrating the state within a processing module during t