KR-20260068027-A - LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

Abstract

According to embodiments, the light-emitting display device comprises a light-emitting element; a second transistor connected to a scan line; a driving transistor that applies current to the light-emitting element; an organic capacitor connected to the gate electrode of the driving transistor; and a third transistor that connects the output side electrode of the driving transistor to the gate electrode, wherein the second transistor, the driving transistor, and the third transistor have channels located in a polycrystalline semiconductor layer, the width of the channel of the third transistor is 1 μm or more and 2 μm or less, and the length of the channel is formed to be 1 μm or more and 2.5 μm or less, so that flicker is not visible when driving at low frequency.

Inventors

• 김근우
• 이재섭
• 이도경
• 성범모
• 김한빛
• 강태욱

Assignees

• 삼성디스플레이 주식회사

Dates

Publication Date

20260513

Application Date

20260407

Claims (1)

1. Light-emitting element; A second transistor connected to a scan line; A driving transistor that applies current to the above-mentioned light-emitting element; An organic capacitor connected to the gate electrode of the above-mentioned driving transistor; and It includes a third transistor that connects the output electrode of the driving transistor and the gate electrode, and The second transistor, the driving transistor, and the third transistor have channels located in a polycrystalline semiconductor layer, and A light-emitting display device in which the width of the channel of the third transistor is 1 μm or more and 2 μm or less, and the length of the channel is 1 μm or more and 2.5 μm or less.

Description

Light Emitting Display Device and Manufacturing Method Thereof The present disclosure relates to a light-emitting display device and a method for manufacturing the same, and more specifically, to a light-emitting display device capable of displaying an image even at low frequencies and a method for manufacturing the same. A display device is a device that displays images, and recently, an organic light emitting diode display, which is a type of light-emitting display device, is attracting attention. Light-emitting display devices possess self-luminous properties and, unlike liquid crystal display devices, do not require a separate light source, allowing for reduced thickness and weight. Furthermore, light-emitting display devices exhibit high-quality characteristics such as low power consumption, high brightness, and high response speed. Generally, a light-emitting display device includes a substrate, a plurality of thin-film transistors located on the substrate, a plurality of insulating layers disposed between the wirings constituting the thin-film transistors, and an organic light-emitting element connected to the thin-film transistors. A light-emitting display device includes a plurality of pixels, and each pixel includes a plurality of transistors. The transistors include polycrystalline semiconductors. To form polycrystalline semiconductors, an amorphous semiconductor undergoes a crystallization step through heat treatment, such as a laser. FIG. 1 is an equivalent circuit diagram of a pixel of a light-emitting display device according to one embodiment. FIG. 2 is a timing diagram of a signal applied to a pixel of a light-emitting display device according to one embodiment. FIG. 3 is a layout diagram of a pixel of a light-emitting display device according to one embodiment. FIG. 4 is an enlarged layout of a third transistor of a light-emitting display device according to one embodiment. Figure 5 is a cross-sectional view taken along the VV line in Figure 4. FIG. 6 is an enlarged layout of the fourth transistor of a light-emitting display device according to one embodiment. FIG. 7 is an equivalent circuit diagram of a pixel of a light-emitting display device according to another embodiment. FIG. 8 is a layout diagram of a pixel of a light-emitting display device according to another embodiment. FIG. 9 is an enlarged layout of a second transistor of a light-emitting display device according to another embodiment. Figure 10 is a graph showing the leakage characteristics of a transistor including a polycrystalline semiconductor. Figure 11 is a graph showing the current characteristics of a transistor including a polycrystalline semiconductor according to aging. FIGS. 12 to 16 are graphs illustrating low-frequency driving characteristics of a light-emitting display device according to one embodiment. FIGS. 17 and 18 are drawings illustrating the sequence of manufacturing a polycrystalline semiconductor in a transistor including a polycrystalline semiconductor according to one embodiment. FIG. 19 is a diagram illustrating a change in channel length in a transistor including a polycrystalline semiconductor according to one embodiment. FIG. 20 is a cross-sectional view illustrating a first gate insulating film according to an embodiment. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification. Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings. Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity. Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated o