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KR-20260068122-A - METHOD AND APPARATUS FOR REPAIRING A DEFECT OF A SAMPLE USING A FOCUSED PARTICLE BEAM

KR20260068122AKR 20260068122 AKR20260068122 AKR 20260068122AKR-20260068122-A

Abstract

The present invention relates to a method (1800) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), comprising: (a) forming at least one first local, electrically conductive sacrificial layer (400, 500) on a sample (205, 300, 1500) (1850) wherein the first local, electrically conductive sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), wherein the first portion (410, 510) is adjacent to at least one defect (320), and the first portion (410, 510) and at least one second portion (420, 530, 540, 550) 560) are electrically conductively connected to each other (570, 580); and (b) a step (1860) of creating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one second part (420, 530, 540, 550, 560) of the first local electrically conductive sacrificial layer (400, 500) for the purpose of correcting the drift of the focused particle beam (227) in relation to at least one defect (320) while at least one defect (320) is being repaired.

Inventors

  • 아우쓰, 니콜
  • 르히노브, 다니엘
  • 페티그, 라이너

Assignees

  • 칼 짜이스 에스엠티 게엠베하

Dates

Publication Date
20260513
Application Date
20220908
Priority Date
20210910

Claims (20)

  1. A method for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), A step of creating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) adjacent to the at least one defect (320) to correct the drift of the focused particle beam (227) in relation to the at least one defect (320) while repairing the at least one defect (320); and The method includes the step of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one first sacrificial layer (400, 500) by depositing at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) using the focused particle beam (227) combined with at least one second precursor gas. The above at least one second precursor gas is different from the at least one first precursor gas used to produce the above at least one first sacrificial layer (400, 500).
  2. A method for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), A step of creating at least one electrically conductive first sacrificial layer (400, 500) on the sample (205, 300, 1500) to correct the drift of the focused particle beam (227) in relation to the at least one defect (320) while repairing the at least one defect (320); and The method includes the step of generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one electrically conductive first sacrificial layer (400, 500) by depositing at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) using the focused particle beam (227) combined with at least one second precursor gas. The above at least one second precursor gas is different from the at least one first precursor gas used to produce the above at least one electrically conductive first sacrificial layer (400, 500).
  3. A method according to claim 1, wherein the first sacrificial layer (400, 500) comprises a locally electrically conductive first sacrificial layer.
  4. A method according to claim 2, wherein the electrically conductive first sacrificial layer (400, 500) comprises a locally electrically conductive first sacrificial layer.
  5. A method according to any one of claims 1 to 3, wherein the focused particle beam (227) comprises a focused electron beam.
  6. A method according to any one of claims 1 to 3, wherein the first sacrificial layer (400, 500) has a first portion (410, 510) and at least one second portion (420, 530, 540, 550, 560), the first portion (410, 510) is adjacent to the at least one defect (320), and the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) are electrically conductively connected to each other (570, 580).
  7. A method according to claim 6 further comprising the step of creating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one second portion (420, 530, 540, 550, 560) of the first sacrificial layer (400, 500) to correct the drift of the at least one defect (320) while repairing the at least one defect (320).
  8. A method according to claim 1 or claim 2, further comprising the step of determining at least one first reference distance (720, 730, 740, 750) between at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) and at least one defect (320) before repairing the at least one defect (320).
  9. A method according to any one of claims 1 to 3, wherein the adjacency of the first portion (410, 510) to the at least one defect (320) comprises: at least one element from the adjacency of the first portion (410, 510) to the edge (325) of the at least one defect (320), partial coverage of the at least one defect (320) by the first portion (410, 510), or complete coverage of the at least one defect (320) by the first portion (410, 510).
  10. A method according to claim 6, wherein the at least one second portion (420, 530, 540, 550, 560) extends across at least one scanning area (422, 432, 442, 452, 532, 542, 552, 562) of the focused particle beam (227) to detect the at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565).
  11. A method according to claim 9 further comprising the step of removing a portion of the first part (410, 510) of the first sacrificial layer (400, 500) covering the at least one defect (320) before repairing the at least one defect (320).
  12. A method according to any one of claims 1 to 3, wherein the at least one defect (320) comprises a defect of excess material, and the method further comprises the step of repairing the at least one defect (320) at least partially through the first sacrificial layer (400, 500).
  13. A method according to claim 6, wherein the first portion (410, 510) and the at least one second portion (420, 530, 540, 550, 560) of the first sacrificial layer (400, 500) have a side range such that the operation of repairing the at least one defect (320) distorts an image containing the at least one defect (320) by 10% or less.
  14. In any one of claims 1 to 3, (a) a step of scanning the samples (205, 300, 1500) with the focused particle beam (227) to generate a defect map of the samples (205, 300, 1500); (b) forming at least one second reference mark (335, 355, 365, 385) on the sample (205, 300, 1500) and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 355, 365, 385) and the at least one defect (320) before forming the first sacrificial layer (400, 500); or (c) forming at least one second sacrificial layer (330, 350, 360, 380) on the sample (205, 300, 1500), depositing at least one second reference mark (335, 355, 365, 385) on the at least one second sacrificial layer (330, 350, 360, 380), and determining at least one second reference distance (340, 345, 370, 390) between the at least one second reference mark (335, 345, 365, 385) and the at least one defect (320) before forming the first sacrificial layer (400, 500). A method including at least one more of the following.
  15. A computer program stored on a computer-readable storage medium, comprising a command that prompts a computer system (240) to execute a method step described in any one of claims 1 to 3.
  16. As a device (200) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), Means for creating at least one first sacrificial layer (400, 500) on the sample (205, 300, 1500) adjacent to the at least one defect (320) to correct the drift of the focused particle beam (227) in relation to the at least one defect (320) while repairing the at least one defect (320); and It includes means for generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one first sacrificial layer (400, 500) by depositing at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) using the focused particle beam (227) combined with at least one second precursor gas, The above at least one second precursor gas is a device (200) different from the at least one first precursor gas used to produce the above at least one first sacrificial layer (400, 500).
  17. As a device (200) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), Means for creating at least one electrically conductive first sacrificial layer (400, 500) on the sample (205, 300, 1500) to correct the drift of the focused particle beam (227) in relation to the at least one defect (320) while repairing the at least one defect (320); and It includes means for generating at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565) on at least one electrically conductive first sacrificial layer (400, 500) by combining with at least one second precursor gas and using the focused particle beam (227) to deposit at least one first reference mark (425, 435, 445, 455, 535, 545, 555, 565), and The above at least one second precursor gas is a device (200) different from the at least one first precursor gas used to produce the above at least one electrically conductive first sacrificial layer (400, 500).
  18. In claim 16 or claim 17, the means for creating the first sacrificial layer (400, 500) comprises an apparatus (200) including means for creating a locally electrically conductive first sacrificial layer (400, 500).
  19. An apparatus (200) further comprising an electronic column having a single-stage capacitor system (218) according to claim 16 or claim 17.
  20. In claim 16 or claim 17, the means for generating the first sacrificial layer (400, 500) comprises at least one electron beam (227), and the apparatus (200) is configured to focus an electron beam with a diameter < 2 nm, wherein the kinetic energy of the electrons colliding with the sample (205, 300, 1500) is < 3000 eV.

Description

Method and apparatus for repairing a defect in a sample using a focused particle beam This application claims priority to the German patent application DE 10 2021 210 019.8 titled “Verfahren und Vorrichtung zum Reparieren eines Defekts einer Probe mit einem fokussierten Teilchenstrahl” [Method and apparatus for repairing a defect in a sample using a focused particle beam]. This was filed with the German Patent Office on September 10, 2021. The entire contents of patent application DE 10 2021 210 019.8 are incorporated by reference into this application. The present invention relates to a method and apparatus for repairing at least one defect in a sample using a focused particle beam. As integration density in microelectronics continues to increase, photolithography masks and/or templates for nanoimprint lithography (NIL) must image smaller structural elements onto the photoresist layer of a wafer, the substrate, or the positive side of the wafer. To meet these requirements, the exposure wavelengths in optical lithography are shifting toward increasingly shorter wavelengths. Currently, argon fluoride (ArF) excimer lasers are primarily used for exposure purposes, emitting at a wavelength of 193 nm. To increase the resolution of the wafer exposure process, various variations have been developed in addition to conventional binary photolithography masks. Related examples include phase-shift masks with different transmittance levels, alternating phase-shift masks, and masks for multiple exposures. Using multiple exposures can further increase resolution. Intensive research is being conducted on lithography systems utilizing wavelengths within the extreme ultraviolet (EUV) spectral range (10nm–15nm). Currently, the first memory chips and logic products are being released to the market and are already being produced using individual masks based on EUV technology. In future products, the proportion of EUV lithography layers is expected to increase. As the dimensions of structural elements continue to decrease, photolithography masks, photomasks, or simple masks cannot always be produced without printable or visible defects on the wafer. The density of visible or printable defects in photomasks increases sharply as structural dimensions shrink. Currently, EUV masks have the highest number of defects due to the exposure wavelengths used. Similarly, the problem of defective stamps or templates is more severe in nanoimprint lithography. This is primarily because, unlike optical lithography, defective stamps or templates in NIL transfer defects 1:1 to the positives to be structured arranged on the wafer or substrate. Due to the enormous cost involved in producing photomasks and/or templates for NIL, defective masks and/or stamps are always repaired whenever possible. Two important groups of defects in masks or stamps are, firstly, dark defects. These are areas where material is present but should not be present. These defects are preferably repaired by removing excess material with the help of a localized etching process. Second, there are so-called clear defects. These are local defects in a photomask that have a higher light transmittance than a reference location without the same defect during optical exposure in a wafer stepper or wafer scanner. Within the scope of the repair process, these defects can be corrected by locally depositing a material with optical properties suitable for the mask or stamp. Generally, mask or stamp defects are corrected by particle beam-induced localized etching and/or localized deposition processes. Positional displacement between the element to be corrected and the particle beam used for repair can occur during the localized processing due to various influences, such as thermal and/or mechanical drift. Additionally, the micro-manipulator used to align defects with the particle beam for repair purposes experiences electrical or mechanical drift over time. To minimize these effects, a reference structure or reference mark is applied near the processing area of the sample and scanned regularly. The measured deviation of the reference mark position relative to the reference position is used during the sample processing procedure to correct the beam position of the particle beam. This is called "drift correction." The reference mark used for this purpose is referred to as a "DC mark" in the industry. The documents listed below are for consideration of the subject of standard marks: US 7 018 683, EP 1 662 538 A2, JP 2003-007247 A, US 2007 / 0 023 689, US 2007 / 0 073 580, US 6 740 456 B2, US 2010 / 0 092 876 A1 and US 5 504 339. Reference structures or reference marks are often created by depositing material near the sample area to be processed. Where possible, reference marks are applied to areas of the photomask that do not interfere with the mask's operation. For example, in the case of a binary photomask, this is an element of the absorber pattern. As the size of the pattern element decre