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RU-2026110135-A - SEMICONDUCTOR PROCESSING DEVICE AND METHOD FOR PROCESSING SEMICONDUCTORS

RU2026110135ARU 2026110135 ARU2026110135 ARU 2026110135ARU-2026110135-A

Inventors

  • ВЭНЬ, София Цзыин
  • МА, Цзе

Assignees

  • ХУАИН РИСЕРЧ КО., ЛТД

Dates

Publication Date
20260504
Application Date
20240709
Priority Date
20231120

Claims (17)

  1. 1. A device for processing semiconductors, characterized in that it includes: a first chamber part and a second chamber part configured to move relative to the first chamber part between an open position and a closed position,
  2. wherein, when the second part of the chamber is in a closed position relative to the first part of the chamber, a microchamber is formed between the first and second parts of the chamber, configured to accommodate a plate therein, when the second part of the chamber is in an open position relative to the first part of the chamber, the plate can be removed or placed; wherein the first part of the chamber and/or the second part of the chamber have a groove formed by a recess from the inner wall of the corresponding part of the chamber, a first through hole passing from the outside through the corresponding part of the chamber for communication with the first section of the groove, and a second through hole passing from the outside through the corresponding part of the chamber for communication with the second section of the groove; wherein, when the second part of the chamber is in a closed position relative to the first part of the chamber and the plate is placed between the first and second parts of the chamber, the groove, by means of blocking with the said surface of the semiconductor plate, forms a closed channel, which communicates with the external environment through the first and second through holes;
  3. the target fluid is supplied through the first through hole into the closed channel, wherein the target fluid entering the closed channel is configured to be directed along the channel, wherein the target fluid contacts a portion of the surface of the plate, and the target fluid that has passed along the surface of the plate exits through the second through hole and is extracted,
  4. wherein, for a certain period of time, a plurality of portions of the target fluid medium are in the closed channel, wherein adjacent portions of the target fluid medium are separated by a separating fluid medium.
  5. 2. The semiconductor processing device of claim 1, wherein the separating fluid is a gas and the target fluid is a liquid, each portion of the target fluid is driven by a driving fluid, wherein the driving fluid is a gas, and for a certain period of time, a plurality of portions of the target fluid are in the same closed channel.
  6. 3. The semiconductor processing device of claim 2, wherein the target fluid in each portion is the same, and the target fluid is used to extract contaminants from the surface of the wafer.
  7. 4. The semiconductor processing device according to claim 2, characterized in that the driving fluid is nitrogen, and the separating fluid is also nitrogen.
  8. 5. The semiconductor processing device according to claim 2, characterized in that the speed of movement of the driving fluid is less than 40 ml/min, and the total volume of the target fluid in the plurality of portions of the target fluid is less than 3 ml.
  9. 6. A device for processing semiconductors according to claim 1, characterized in that each groove is made in the form of a spiral, wherein one of the first and second through holes is located in the central region of the spiral groove, and the other of the first and second through holes is located in the peripheral region of the spiral groove.
  10. 7. A method for processing semiconductors in a semiconductor processing device, wherein the semiconductor processing device includes a first chamber part and a second chamber part configured to move relative to the first chamber part between an open position and a closed position, wherein, when the second chamber part is in the closed position relative to the first chamber part, a microchamber is formed between the first and second chamber parts, configured to accommodate a wafer therein, wherein, when the second chamber part is in the open position relative to the first chamber part, the wafer can be removed or placed; wherein the first chamber part and/or the second chamber part have a groove formed by a recess from the inner wall of the corresponding chamber part, a first through hole passing externally through the corresponding chamber part for communicating with the first section of the groove, and a second through hole passing externally through the corresponding chamber part for communicating with the second section of the groove; wherein, when the second part of the chamber is in a closed position relative to the first part of the chamber and the plate is placed between the first and second parts of the chamber, the groove, by means of blocking with the said surface of the semiconductor plate, forms a closed channel that communicates with the external environment through the first and second through holes; characterized in that the method includes:
  11. dividing a target fluid into a plurality of portions and isolating adjacent portions of the target fluid using a separating fluid;
  12. feeding a plurality of portions of the target fluid, separated by a separating fluid, through the first through hole into the closed channel so that for a certain period of time the plurality of portions of the target fluid are in the closed channel, wherein adjacent portions of the target fluid are separated by the separating fluid;
  13. setting in motion, by means of a driving fluid, a plurality of portions of a target fluid separated by a separating fluid within a closed channel for their exit through a second through hole from the closed channel;
  14. combining multiple portions of a target fluid exiting a closed channel for analysis.
  15. 8. The method of processing semiconductors according to claim 7, characterized in that the separating fluid is a gas, and the target fluid is a liquid, the driving fluid is a gas, for a certain period of time, a plurality of portions of the target fluid are in the same closed channel, and the target fluid is used to extract contaminants from the surface of the wafer.
  16. 9. The method for processing semiconductors according to claim 8, characterized in that the driving fluid is nitrogen, and the separating fluid is also nitrogen.
  17. 10. The method for processing semiconductors according to claim 8, characterized in that the speed of movement of the driving fluid is less than 40 ml/min, and the total volume of the target fluid in the plurality of portions of the target fluid is less than 3 ml.