TW-202612021-A - DEEP TRENCH ISOLATION ETCHING
TW202612021ATW 202612021 ATW202612021 ATW 202612021ATW-202612021-A
Abstract
Methods of manufacturing semiconductor devices are described. A film stack on a substrate is exposed to a mixture of chlorine (Cl<sub>2</sub>), hydrogen bromide (HBr), oxygen (O<sub>2</sub>), and a fluorine-containing hydrocarbon to etch an opening in the film stack. The fluorine-containing hydrocarbon may have a general formula (I) CxHyFz wherein x is an integer in a range of from 1 to 4, y is an integer in a range of from 0 to 8, and z is an integer in a range of from 1 to 8. The film stack may additionally be exposed to etch cycles of a plasma where the plasma can be turned off periodically.
Inventors
- WANG, HAN
- LEE, GENE H.
Assignees
- 美商應用材料股份有限公司
Dates
- Publication Date
- 20260316
- Application Date
- 20250715
- Priority Date
- 20240813