Search

US-12617692-B2 - Film-forming material

US12617692B2US 12617692 B2US12617692 B2US 12617692B2US-12617692-B2

Abstract

A film-forming material of the present invention contains an oxyfluoride of yttrium represented by YO X F Y (X and Y are numbers satisfying 0<X and X<Y) and YF 3 , wherein a ratio I 2 /I 1 of a peak height I 2 of the (020) plane of YF 3 to a peak height I 1 of the main peak of YO X F Y as analyzed by XRD is from 0.005 to 100. It is preferable that a ratio I 4 /I 1 of a peak height I 4 of the main peak of Y 2 O 3 to the peak height I 1 of the main peak of YO X F Y as analyzed by XRD is 0.01 or less.

Inventors

  • Ryuichi Sato
  • Naoki Fukagawa
  • Yuji SHIGEYOSHI
  • Kento MATSUKURA

Assignees

  • MITSUI KINZOKU COMPANY, LIMITED

Dates

Publication Date
20260505
Application Date
20230825
Priority Date
20151228

Claims (14)

  1. 1 . A film-forming material in powder form comprising: an yttrium oxyfluoride represented by YO 0.8 F 1.4 and YF 3 , wherein a ratio I 2 /I 1 of a peak height I 2 of the (020) plane of the YF 3 to a height I 1 of a main peak of the YO 0.8 F 1.4 as analyzed by XRD is from 0.19 to 3, and the average particle size D 50 of the film-forming material in powder form is 0.1 μm to 9 μm, and an oxygen content in the film-forming material in powder form is from 0.5 to 11.0 mass %.
  2. 2 . The film-forming material in powder form according to claim 1 , wherein a ratio I 3 /I 1 of a peak height Is of a main peak of YOF to the peak height I 1 of the main peak of the YO 0.8 F 1.4 as analyzed by XRD is 0.5 or less.
  3. 3 . The film-forming material in powder form according to claim 1 , wherein a ratio I 4 /I 1 of a peak height I 4 of a main peak of Y 2 O 3 to the peak height I 1 of the main peak of the YO 0.8 F 1.4 as analyzed by XRD is 0.01 or less.
  4. 4 . The film-forming material in powder form according to claim 1 , wherein the film-forming material in powder form is used for a thermal spraying method.
  5. 5 . The film-forming material in powder form according to claim 1 , wherein the film-forming material is used for an aerosol deposition method.
  6. 6 . The film-forming material in powder form according to claim 1 , wherein the film-forming material is used for an ion plating method.
  7. 7 . A method for producing a film, which comprises a step of thermal spraying the film-forming material in powder form according to claim 1 .
  8. 8 . A method for producing a film, which comprises a step of aerosol depositing the film-forming material in powder form according to claim 1 .
  9. 9 . A method for producing a film, which comprises a step of ion plating the film-forming material in powder form according to claim 1 .
  10. 10 . A film-forming material in slurry form which contains the film-forming material in powder form according to claim 1 .
  11. 11 . The film-forming material in slurry form according to claim 10 , wherein the film-forming material in slurry form is used for a thermal spraying method.
  12. 12 . A method for producing a film, which comprises a step of thermal spraying the film-forming material in slurry form according to claim 10 .
  13. 13 . A film-forming material in powder form according to claim 1 , which is obtained by firing a mixture obtained by grinding a powder containing Y 2 O 3 and YF 3 , and grinding the fired product.
  14. 14 . The film-forming material in powder form according to claim 1 , wherein the average particle size D 50 of the film-forming material in powder form is 0.1 μm to 8 μm.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is a Divisional application of co-pending application Ser. No. 17/856,430, filed on Jul. 1, 2022, which is a Divisional application of application Ser. No. 17/060,442, filed on Oct. 1, 2020, which is a Continuation application of application Ser. No. 16/061,242 (U.S. Pat. No. 10,934,174), filed on Jun. 11, 2018, which is the National Phase under 35 U.S.C. § 371 of International Application No. PCT/JP2016/087364, filed on Dec. 15, 2016, which claims the benefit under 35 U.S.C. § 119(a) to Patent Application No. 2015-255974, filed in Japan on Dec. 28, 2015, all of which are hereby expressly incorporated by reference into the present application. TECHNICAL FIELD The present invention relates to a film-forming material containing an oxyfluoride of yttrium represented by YOXFY (X and Y are numbers satisfying 0<X and X<Y). BACKGROUND ART In the fabrication of semiconductor devices, there are cases where a halogen-based gas, such as a fluorine-based gas or a chlorine-based gas, is used in an etching step, such as plasma etching. In order to prevent corrosion of an etching apparatus due to the halogen-based gas, generally, the inner side of the etching apparatus is coated with a highly anti-corrosive substance. Materials containing a rare earth element, typically, yttrium are often used as one type of such substances. Patent Document 1 discloses a thermal spray material composed of granules containing an oxyfluoride (LnOF) of a rare earth element. This document states that “The oxyfluoride (LnOF) of a rare earth element (Ln) is a compound composed of the rare earth element (Ln), oxygen (O), and fluorine (F). The LnOF may be a compound having a molar ratio among the rare earth element (Ln), oxygen (O), and fluorine (F) of Ln:O:F=1:1:1. Also, the LnOF may be a compound having an Ln:O:F molar ratio other than Ln:O:F=1:1:1. For example, when Ln is Y, the LnOF include Y5O4F7, Y7O6F9, and the like as well as YOF, and may be a single compound or a mixture of two or more of such oxyfluorides.” This document states that the thermal spray material may also contain a fluoride LnF3 of a rare earth element in addition to the LnOF. CITATION LIST Patent Literature Patent Literature 1: US 2015111037(A1) SUMMARY OF INVENTION However, the yttrium oxyfluoride produced in the examples of Patent Document 1 is actually a compound having a molar ratio among yttrium (Y), oxygen (O), and fluorine (F) of Ln:O:F=1:1:1, that is, YOF, and a thermal spray material using a compound represented by YOXFY (X and Y are numbers satisfying 0<X and X<Y) as yttrium oxyfluoride (hereinafter also simply referred to as YOXFY) is not produced in the examples of this document. Moreover, in this document, formation of a film using a thermal spray material containing YOXFY and evaluation of the film are not performed. Also, this document makes no mention whatsoever of a combination of YOXFY and YF3. Furthermore, the demand for improvement in corrosion resistance of film-forming materials against halogen-based plasma has recently been becoming more and more severe, and in terms of the corrosion resistance, the thermal spray material using the YOF produced in Patent Document 1 leaves room for improvement. However, film-forming materials containing only YOXFY also leave room for improvement in terms of the above-described corrosion resistance. The present invention provides a film-forming material that can eliminate various drawbacks of related art described above. The inventors of the present invention have surprisingly found that a mixture of an yttrium oxyfluoride represented by YOXFY and YF3 exhibits a high deposition rate when used as a film-forming material, and the resultant film has a high corrosion resistance against plasma using a halogen-based gas, namely either a fluorine-based gas or a chlorine-based gas, and have thus accomplished the present invention. This invention provides a film-forming material including: an yttrium oxyfluoride represented by YOXFY (X and Y are numbers satisfying 0<X and X<Y) and YF3, wherein a ratio I2/I1 of a peak height I2 of the (020) plane of the YF3 to a height I1 of a main peak of the YOXFY as analyzed by XRD is from 0.005 to 100. BRIEF DESCRIPTION OF DRAWINGS The FIGURE is a chart showing the results of powder X-ray diffractometry of a film-forming material of Example 5. DESCRIPTION OF EMBODIMENTS In the following description, a film-forming material of the present invention (hereinafter, also referred to simply as “material of the present invention”) will be described based on a preferred embodiment thereof. One of the features of the film-forming material of the present invention is that the film-forming material contains a combination of an oxyfluoride of yttrium represented by YOXFY and a fluoride (YF3) of yttrium. Thus, the film-forming material of the present invention exhibits a high deposition rate, and the resultant film has a high corrosion resistance a