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US-12617973-B2 - Slurry compositions for polishing metal layers, chemical mechanical polishing apparatuses using the same, and methods for fabricating semiconductor devices using the same

US12617973B2US 12617973 B2US12617973 B2US 12617973B2US-12617973-B2

Abstract

Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.

Inventors

  • YEA RIN BYUN
  • In Kwon Kim
  • Sang Kyun Kim
  • Hyo San LEE
  • Byung Keun Hwang

Assignees

  • SAMSUNG ELECTRONICS CO., LTD.

Dates

Publication Date
20260505
Application Date
20221130
Priority Date
20211221

Claims (18)

  1. 1 . A slurry composition for chemical mechanical polishing, the slurry composition comprising: polishing particles in an amount of 0.1% to 10% by weight of the slurry composition and including metal oxides; an oxidant in an amount of 0.1% to 5% by weight of the slurry composition; a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition, the thermo-sensitive agent including metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, wherein the thermo-sensitive agent comprises different particles from the polishing particles; and water, wherein the slurry composition has a pH of 1 to 8.
  2. 2 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent has a thermal conductivity from 15 W/(m·K) to 1,000 W/(m·K).
  3. 3 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent further includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.
  4. 4 . The slurry composition for chemical mechanical polishing of claim 3 , wherein the thermo-sensitive agent includes alpha iron oxide (α-Fe 2 O 3 ) nanoparticles.
  5. 5 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the polishing particles include at least one of silica, alumina, ceria, titania, zirconia, magnesia, germania, and mangania.
  6. 6 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the oxidant includes at least one of hydrogen peroxide, hydrogen peroxide-urea, performic acid, peracetic acid, potassium periodate, ammonium peroxymonosulfate, potassium perchlorate, potassium perbromate, and potassium permanganate.
  7. 7 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising: a catalyst including an iron (Fe)-containing compound.
  8. 8 . The slurry composition for chemical mechanical polishing of claim 7 , wherein the catalyst includes iron (III) nitrate (Fe(NO 3 ) 3 ).
  9. 9 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising: an inhibitor including a nitrogen-containing compound.
  10. 10 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising: a stabilizer including an acidic compound.
  11. 11 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising: a biocide.
  12. 12 . A slurry composition for chemical mechanical polishing, the slurry composition comprising: polishing particles including metal oxide; an oxidant including a peroxide compound; a pH adjuster; a thermo-sensitive agent including metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, wherein the thermo-sensitive agent comprises different particles from the polishing particles; and water.
  13. 13 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the thermo-sensitive agent further includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.
  14. 14 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the polishing particles include colloidal silica.
  15. 15 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the oxidant includes hydrogen peroxide.
  16. 16 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a pH of 1 to 8.
  17. 17 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a thermal conductivity of 0.5 W/(m·K) to 1.0 W/(m·K).
  18. 18 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition is a slurry composition for polishing a metal film.

Description

CROSS-REFERENCE TO RELATED APPLICATION This application claims priority to Korean Patent Application No. 10-2021-0183723, filed on Dec. 21, 2021, and all the benefits accruing therefrom under 35 U.S.C. § 119, the disclosure of which is incorporated herein by reference in its entirety. BACKGROUND The present inventive concept relates to a slurry composition for chemical mechanical polishing, a chemical mechanical polishing apparatus using the same, and a method for fabricating a semiconductor device using the same. More specifically, the present inventive concept relates to a temperature-sensitive slurry composition for chemical mechanical polishing, a chemical mechanical polishing apparatus using the same, and a method for fabricating a semiconductor device using the same. In a fabricating process of a semiconductor device, a chemical mechanical polishing (CMP) process is widely used as a flattening technique for removing a step between films formed on a substrate. The chemical mechanical polishing process may efficiently flatten or planarize the films formed on the substrate, by injecting polishing slurry including polishing particles between a substrate and a polishing pad, and rubbing the substrate and the polishing pad against each other. On the other hand, in the chemical mechanical polishing process based on a chemical reaction, a change in polishing temperature may cause a change in the polishing characteristics of the chemical mechanical polishing process. Therefore, methods capable of efficiently controlling the polishing temperature to achieve the required polishing characteristics are being studied. SUMMARY Aspects of the present inventive concept provide a slurry composition for chemical mechanical polishing that improves productivity and uniformity of the chemical mechanical polishing process. Aspects of the present inventive concept also provide a chemical mechanical polishing apparatus that improves the productivity and uniformity of the chemical mechanical polishing process. Aspects of the present inventive concept also provide a method for fabricating a semiconductor device having improved productivity and uniformity. However, aspects of the present inventive concept are not restricted to the one set forth herein. The above and other aspects of the present inventive concept will become more apparent to one of ordinary skill in the art to which the present inventive concept pertains by referencing the detailed description of the present inventive concept given below. According to an aspect of the present inventive concept, there is provided a slurry composition for chemical mechanical polishing comprising polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition, the thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8. According to an aspect of the present inventive concept, there is provided a slurry composition for chemical mechanical polishing comprising polishing particles including metal oxide, an oxidant including a peroxide compound, a pH adjuster, a thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, and water. According to an aspect of the present inventive concept, there is provided a method for fabricating a semiconductor device, the method comprising forming a metal film on a semiconductor substrate, and performing a chemical mechanical polishing process on the metal film, using a slurry composition for chemical mechanical polishing, wherein the slurry composition for chemical mechanical polishing includes polishing particles, an oxidant, a thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher, and water, wherein the slurry composition has a pH of 1 to 8. BRIEF DESCRIPTION OF THE DRAWINGS The above and other aspects and features of the present inventive concept will become more apparent by describing in detail some example embodiments thereof with reference to the attached drawings, in which: FIG. 1 is a graph explaining the change in the thermal conductivity increase rate with the concentration of α-Fe2O3 for a slurry composition for chemical mechanical polishing. FIG. 2 is a graph explaining the change in temperature over time for slurry compositions for chemical mechanical polishing based on the concentration of α-Fe2O3. FIG. 3 is a schematic perspective view for explaining the chemical mechanical polishing apparatus according to some embodiments. FIGS. 4 to 8 are intermediate step diagrams for explaining a method for fabricating the semiconductor device according to some embodiments. DETAILED DESCRIPTION Hereinafter, slurry compositi