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US-12617978-B2 - Semiconductor substrate cleaning method, processed semiconductor substrate manufacturing method, and composition for peeling

US12617978B2US 12617978 B2US12617978 B2US 12617978B2US-12617978-B2

Abstract

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L 1 and L 2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L 1 and that of the alkyl group L 2 is 6 or less) in an amount of 80 mass % or more.

Inventors

  • Takahisa OKUNO
  • Masaki YANAI
  • Takuya Fukuda
  • Hiroto Ogata
  • Shunsuke MORIYA
  • Hiroshi Ogino
  • Tetsuya Shinjo

Assignees

  • NISSAN CHEMICAL CORPORATION

Dates

Publication Date
20260505
Application Date
20210322
Priority Date
20200323

Claims (20)

  1. 1 . A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive which comprises a polyorganosiloxane component (A) being curable through hydrosilylation; the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L): wherein each of L 1 and L 2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L 1 and that of the alkyl group L 2 is 6 or less in an amount of 80 mass % or more.
  2. 2 . The semiconductor substrate cleaning method according to claim 1 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.
  3. 3 . The semiconductor substrate cleaning method according to claim 2 , wherein the solvent is formed of the organic solvent represented by formula (L).
  4. 4 . The semiconductor substrate cleaning method according to claim 1 , wherein L 1 is a methyl group.
  5. 5 . The semiconductor substrate cleaning method according to claim 4 , wherein L 2 is a butyl group or a pentyl group.
  6. 6 . The semiconductor substrate cleaning method according to claim 1 , wherein adhesive component(S) further comprises at least one species selected from among an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.
  7. 7 . A processed semiconductor substrate production method comprising: producing a laminate having a semiconductor substrate, a support substrate, and an adhesive layer formed from an adhesive composition; processing the semiconductor substrate of the produced laminate; separating the semiconductor substrate and the adhesive layer from the support substrate; and removing the adhesive layer on the semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L): wherein each of L 1 and L 2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L 1 and that of the alkyl group L 2 is 6 or less in an amount of 80 mass % or more.
  8. 8 . The processed semiconductor substrate production method according to claim 7 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.
  9. 9 . The processed semiconductor substrate production method according to claim 8 , wherein the solvent is formed of the organic solvent represented by formula (L).
  10. 10 . The processed semiconductor substrate production method according to claim 7 , wherein L 1 is a methyl group.
  11. 11 . The processed semiconductor substrate production method according to claim 10 , wherein L 2 is a butyl group or a pentyl group.
  12. 12 . The processed semiconductor substrate production method according to claim 7 , wherein the adhesive layer is a film formed by use of an adhesive composition which contains an adhesive component(S) containing at least one species selected from among a siloxane adhesive, an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.
  13. 13 . The processed semiconductor substrate production method according to claim 12 , wherein the adhesive component(S) contains a siloxane adhesive.
  14. 14 . The processed semiconductor substrate production method according to claim 13 , wherein the siloxane adhesive contains a polyorganosiloxane component (A) which is curable through hydrosilylation.
  15. 15 . A remover composition for use in removal of an adhesive layer provided on a semiconductor substrate during cleaning the semiconductor substrate, which composition contains a solvent but no salt, wherein the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive which comprises a polyorganosiloxane component (A) being curable through hydrosilylation; the solvent includes an organic solvent represented by formula (L): wherein each of L 1 and L 2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L 1 and that of the alkyl group L 2 is 6 or less in an amount of 80 mass % or more.
  16. 16 . The remover composition according to claim 15 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.
  17. 17 . The remover composition according to claim 16 , wherein the solvent is formed of the organic solvent represented by formula (L).
  18. 18 . The remover composition according to claim 15 , wherein L 1 is a methyl group.
  19. 19 . The remover composition according to claim 18 , wherein L 2 is a butyl group or a pentyl group.
  20. 20 . The remover composition according to claim 15 , wherein the adhesive component(S) further comprises at least one species selected from among an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

Description

TECHNICAL FIELD The present invention relates to a method for cleaning a semiconductor substrate (hereinafter may be referred to as a “semiconductor substrate cleaning method”), to a method for producing a processed semiconductor substrate (hereinafter may be referred to as a “processed semiconductor substrate production method”), and to a composition for removing an adhesive layer (hereinafter may be referred to simply as a “remover composition”). BACKGROUND ART Conventionally, electronic elements and wires are 2-dimensionally (within a plane) integrated on a semiconductor wafer. In a trend toward further integration, demand has arisen for a semiconductor integration technique which achieves 3-dimensional integration (i.e., stacking) in addition to 2-dimensional integration. In the technique of 3-dimensional integration, a number of layers are stacked with wire connection by the mediation of through silicon vias (TSVs). In integration of multiple layers, each component wafer to be stacked is thinned by polishing (i.e., grinding) a surface opposite the circuit-furnished surface (i.e., a back surface), and the thus-thinned semiconductor wafers are stacked. Before thinning, the semiconductor wafer (may also be called simply “wafer”) is fixed to a support for facilitating polishing by means of a polishing machine (i.e., grinder). Since the fixation must be easily removed after polishing, the fixation is called temporary bonding. Temporary bonding must be easily removed from the support. When such temporary bonding is removed by excessive force, in some cases a thinned semiconductor wafer may be broken or deformed. In order to prevent such a phenomenon, the temporarily bonded support is detached in a gentle manner. However, from another aspect, it is not preferred that the temporarily bonded support be removed or slid by a stress applied during polishing of the back surface of the semiconductor wafer. Therefore, temporary bonding must withstand the stress during polishing and must be easily removed after polishing. For example, one required performance includes having high stress (i.e., strong adhesion) toward the plane direction during polishing and low stress (i.e., weak adhesion) toward the thickness direction (i.e., the direction crossing the plane direction) during detaching. Also, temporary bonding must withstand heat, since the temperature of such a wafer is 150° C. or higher in some processing steps. Under such circumstances, polysiloxane adhesives meeting the aforementioned characteristic requirements are mainly used as temporary adhesives in the semiconductor industry. In temporary bonding by use of a polysiloxane adhesive, an adhesive residue often remains on a substrate surface after removal of the thinned substrate. In order to avoid an undesired phenomenon in a subsequent step, there has been developed a cleaning agent composition for removing such a residue and cleaning the surface of a semiconductor substrate (see, for example, Patent Documents 1 and 2). Patent Document 1 discloses a siloxane resin-remover containing a polar, aprotic solvent and a quaternary ammonium hydroxide, and Patent Document 2 discloses a cured resin-remover containing an alkylammonium fluoride. However, in the current industrial field of semiconductors, there is continuous demand for a new cleaning composition, namely, an effective cleaning composition and method. Meanwhile, a semiconductor wafer is electrically connected to semiconductor chips by the mediation of, for example, bump balls formed of a metallic conductive material. By use of chips having such bump balls, the dimensions of a semiconductor package product are reduced. In this respect, bump balls formed of a metal such as copper or tin, which has poor corrosion resistance, are problematically damaged by a cleaning composition for removing adhesive residue remaining on a support or a wafer (see Patent Document 3). Thus, one requirement in such a cleaning composition and method is to prevent corrosion of bump balls during cleaning of a substrate. PRIOR ART DOCUMENTS Patent Documents Patent Document 1: WO 2014/092022Patent Document 2: U.S. Pat. No. 6,818,608Patent Document 3: Korean Patent Application Laid-Open 2018-0066550 SUMMARY OF THE INVENTION Problems to be Solved by the Invention The present invention has been conceived under such circumstances. Thus, an object of the invention is to provide a semiconductor substrate cleaning method for suitably and easily removing an adhesive layer formed by use of, for example, a siloxane adhesive, from a semiconductor substrate having the adhesive layer on a surface thereof, while damage to bumps provided on the semiconductor substrate is reduced or inhibited. Another object is to provide a processed semiconductor substrate production method including such a cleaning method. Still another object is to provide a remover composition for use in the cleaning method. Means for Solving the Problems The present inventors have