US-12618145-B2 - Film-forming method and film-forming apparatus

US12618145B2US 12618145 B2US12618145 B2US 12618145B2US-12618145-B2

Abstract

A film-forming method includes (a) supplying an aminosilane-based gas to a recess formed at a substrate and adsorbing the aminosilane-based gas to an inner surface of the recess, (b) supplying an oxidizing gas to the recess to which the aminosilane-based gas is adsorbed and reacting the aminosilane-based gas with the oxidizing gas, (c) exposing the substrate to a plasma generated from a modification gas, and (d) repeatedly performing a first process including (a), (b), and (c) in an order of (a), (b), and (c), thereby forming a silicon-containing film. (d) includes changing a temperature of the substrate during repetition of the first process.

Inventors

Takashi Chiba
Sayaka SAIJO

Assignees

TOKYO ELECTRON LIMITED

Dates

Publication Date: 20260505
Application Date: 20240716
Priority Date: 20230727

Claims (5)

1 . A film-forming method comprising: (a) supplying an aminosilane-based gas to a recess formed at a substrate and adsorbing the aminosilane-based gas to an inner surface of the recess; (b) supplying an oxidizing gas to the recess to which the aminosilane-based gas is adsorbed and reacting the aminosilane-based gas with the oxidizing gas; (c) exposing the substrate to a plasma generated from a modification gas; and (d) repeatedly performing a first process including (a), (b), and (c) in an order of (a), (b), and (c), thereby forming a silicon-containing film, wherein (d) includes changing a temperature of the substrate from a first temperature to a second temperature during repetition of the first process, the first temperature is a temperature that is higher than the second temperature, and both of the first temperature and the second temperature are temperatures at which the aminosilane-based gas is not decomposed.
2 . The film-forming method according to claim 1 , wherein the temperature of the substrate is first maintained at the first temperature in the first process to be repeated.
3 . The film-forming method according to claim 1 , wherein the aminosilane-based gas is a tris(dimethylamino)silane (3DMAS) gas.
4 . The film-forming method according to claim 1 , further comprising: (e) supplying the oxidizing gas to the recess; (f) exposing the substrate to a plasma generated from a dilution gas; and (g) repeating a second process including (e) and (f) in an order of (e) and (f), wherein (d) includes performing (g) during the repetition of the first process.
5 . The film-forming method according to claim 1 , wherein (d) includes using two vacuum chambers that are maintained at different temperatures, and changing the temperature of the substrate by transferring the substrate from one of the two vacuum chambers to another one of the two vacuum chambers.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application is based upon and claims priority to Japanese Patent Application No. 2023-122106, filed on Jul. 27, 2023, the entire contents of which are incorporated herein by reference. BACKGROUND 1. Field of the Invention The present disclosure relates to film-forming methods and film-forming apparatuses. 2. Description of the Related Art A technique of forming a film in a recess formed at a substrate from a reaction product of a first reactive gas and a second reactive gas that is reactive with the first reactive gas, is known. See, for example, Japanese Patent Application Publication No. 2013-135154. In Japanese Patent Application Publication No. 2013-135154, hydroxy groups are adsorbed on an inner surface of the recess in a desired distribution, followed by supplying the first reactive gas and the second reactive gas in this order, thereby controlling a distribution of a thickness of a film formed in the recess. SUMMARY A film-forming method according to an aspect of the present disclosure includes: (a) supplying an aminosilane-based gas to a recess formed at a substrate and adsorbing the aminosilane-based gas to an inner surface of the recess; (b) supplying an oxidizing gas to the recess to which the aminosilane-based gas is adsorbed and reacting the aminosilane-based gas with the oxidizing gas; (c) exposing the substrate to a plasma generated from a modification gas; and (d) repeatedly performing a first process including (a), (b), and (c) in an order of (a), (b), and (c), thereby forming a silicon-containing film. (d) includes changing a temperature of the substrate during repetition of the first process. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view illustrating a film-forming apparatus according to an embodiment; FIG. 2 is a schematic perspective view illustrating an internal configuration of a vacuum chamber of the film-forming apparatus of FIG. 1; FIG. 3 is a schematic plan view illustrating an internal configuration of the vacuum chamber of the film-forming apparatus of FIG. 1; FIG. 4 is a schematic cross-sectional view of the film-forming apparatus of FIG. 1, taken along a concentric circle of a rotation table provided in the vacuum chamber; FIG. 5 is another schematic cross-sectional view of the film-forming apparatus of FIG. 1; FIG. 6 is a schematic cross-sectional view illustrating a plasma generator provided in the film-forming apparatus of FIG. 1; FIG. 7 is another schematic cross-sectional view illustrating the plasma generator provided in the film-forming apparatus of FIG. 1; FIG. 8 is a schematic top view illustrating the plasma generator provided in the film-forming apparatus of FIG. 1; FIG. 9 is a flowchart illustrating a film-forming method according to an embodiment; FIGS. 10A to 10C are schematic diagrams (1) describing the film-forming method according to the embodiment; FIGS. 11A to 11C are schematic diagrams (2) describing the film-forming method according to the embodiment; FIGS. 12A to 12C are schematic diagrams (3) describing the film-forming method according to the embodiment; FIGS. 13A to 13C are schematic diagrams (4) describing the film-forming method according to the embodiment; FIGS. 14A to 14C are schematic diagrams (5) describing the film-forming method according to the embodiment; FIG. 15 is a schematic diagram describing reaction of a 3DMAS gas on a surface of a substrate; and FIG. 16 is a graph illustrating a film thickness distribution of a silicon-containing film in a depth direction of a trench. DETAILED DESCRIPTION OF THE INVENTION The present disclosure provides a technique of being able to control the shape of a silicon-containing film embedded in a recess formed at a substrate. Hereinafter, non-limiting embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding members or components are designated by the same reference symbols, and duplicate description thereof will be omitted. [Film-Forming Apparatus] A film-forming apparatus suitable for performing a film-forming method according to an embodiment will be described with reference to FIGS. 1 to 3. The film-forming apparatus includes: a flat vacuum chamber 1 having an approximately circular planar shape; and a rotation table 2 provided in the vacuum chamber 1 and having a rotation center at the center of the vacuum chamber 1. The vacuum chamber 1 includes: a cylindrical chamber body 12 having a bottom; and a top plate 11 that is hermetically detachably disposed on the upper surface of the chamber body 12 via a seal member 13, such as an O-ring or the like. The rotation table 2 is fixed to a cylindrical core 21 at a center thereof. The core 21 is fixed to an upper end of a rotation shaft 22 extending in a vertical direction. The rotation shaft 22 penetrates a bottom 14 of the vacuum chamber 1, and the lower end thereof is attached to a driver 23 configured to rotate