US-12618148-B2 - Deposition method and deposition apparatus

US12618148B2US 12618148 B2US12618148 B2US 12618148B2US-12618148-B2

Abstract

A deposition method includes: (a) preparing a substrate with a recess on a surface thereof; (b) supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; (c) supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and (d) after the (c), supplying a first gas containing a dehydrating agent to the surface.

Inventors

Muneyuki Otani
Akira Matsubara

Assignees

TOKYO ELECTRON LIMITED

Dates

Publication Date: 20260505
Application Date: 20230612
Priority Date: 20220616

Claims (7)

1 . A deposition method comprising: a step (a) of preparing a substrate with a recess on a surface thereof; a step (b) of supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; a step (c) of supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and a step (d), after the step (c), of supplying a first gas containing a dehydrating agent to the surface, wherein the dehydrating agent includes a tetrahydrofuran gas.
2 . The deposition method according to claim 1 , wherein the step (b), the step (c), and the step (d) are repeated multiple times in this order.
3 . The deposition method according to claim 1 , wherein the step (c) includes adsorbing H 2 O to the surface, and the step (d) includes desorbing H 2 O adsorbed to the surface.
4 . The deposition method according to claim 1 , wherein the first gas includes an inert gas.
5 . The deposition method according to claim 1 , further comprising: a step (e), between the step (b) and the step (c), of supplying an inert gas to the surface.
6 . The deposition method according to claim 1 , wherein the substrate is placed on a rotary table in a vacuum chamber along a circumferential direction, the vacuum chamber includes an adsorption region where the step (b) is performed, an oxidation region where the step (c) is performed, and a dehydration region where the step (d) is performed, above the rotary table along a rotation direction of the rotary table, and the step (b), the step (c), and the step (d) are performed by rotating the rotary table in a state where the organic raw material gas is supplied to the adsorption region, the oxygen-containing gas is supplied to the oxidation region, and the first gas is supplied to the dehydration region.
7 . A deposition apparatus comprising: a vacuum chamber; a gas supplier configured to supply a gas into the vacuum chamber; and a controller, wherein the controller is configured to control the gas supplier to perform: a step (a) of preparing a substrate with a recess on a surface thereof; a step (b) of supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; a step (c) of supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and a step (d), after the step (c), of supplying a first gas containing a dehydrating agent to the surface, wherein the dehydrating agent includes a tetrahydrofuran gas.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS The present application is based on and claims priority to Japanese Patent Application No. 2022-097230 filed on Jun. 16, 2022, the contents of which are incorporated herein by reference in their entirety. BACKGROUND OF THE INVENTION Field of the Invention The present disclosure relates to a deposition method and a deposition apparatus. Description of the Related Art A technique is known to perform deposition by the atomic layer deposition method while adjusting the amount of OH groups by supplying an additive gas that can control the adsorption of the raw material gas prior to adsorption of the raw material gas (see, for example, Japanese Laid-Open Patent Publication No. 2017-212246). SUMMARY OF THE INVENTION According to one aspect of the present disclosure, a deposition method includes: (a) preparing a substrate with a recess on a surface thereof; (b) supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; (c) supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and (d) after the (c), supplying a first gas containing a dehydrating agent to the surface. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view illustrating a configuration example of a deposition apparatus according to an embodiment; FIG. 2 is a perspective view illustrating an internal configuration of the deposition apparatus of FIG. 1; FIG. 3 is a planar view illustrating an internal configuration of the deposition apparatus of FIG. 1; FIG. 4 is a cross-sectional view illustrating a vacuum chamber along a circumferential direction of a rotary table; FIG. 5 is a cross-sectional view illustrating the vacuum chamber along a radial direction of the rotary table; FIG. 6 is a planar view illustrating another configuration example of the deposition apparatus according to an embodiment; FIG. 7 is a flowchart illustrating an example of a deposition method according to an embodiment; FIG. 8 is a schematic diagram illustrating an example of a deposition method according to an embodiment; FIG. 9 is a schematic diagram illustrating a conventional deposition method; FIG. 10 is a diagram illustrating an evaluation method of embedding characteristics of the silicon oxide film; and FIG. 11 is a diagram illustrating the evaluation results of the embedding characteristics of the silicon oxide film. DESCRIPTION OF THE EMBODIMENTS Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all accompanying drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and overlapping descriptions are omitted. [Deposition Apparatus] Referring to FIGS. 1 to 5, a deposition apparatus according to an embodiment will be described. As illustrated in FIGS. 1 to 3, the deposition apparatus includes a flat vacuum chamber 1 having an approximately circular planar shape and a rotary table 2 provided in the vacuum chamber 1 and having a rotation center at the center of the vacuum chamber 1. The vacuum chamber 1 includes a chamber body 12 having a cylindrical shape with a bottom and a top plate 11 that is hermetically detachably provided on the top surface of the chamber body 12 via a sealing member 13 (FIG. 1) such as an O-ring, for example. The rotary table 2 is fixed to a cylindrical core 21 at the center. The core 21 is fixed to the upper end of a rotating shaft 22 extending in the vertical direction. The rotating shaft 22 penetrates the bottom 14 of the vacuum chamber 1, and its lower end is attached to a driver 23 that rotates the rotating shaft 22 (FIG. 1) around a vertical axis. The rotating shaft 22 and the driver 23 are accommodated in a cylindrical case body 20 with an open top surface. The case body 20 is hermetically attached to the lower surface of the bottom 14 of the vacuum chamber 1 by a flange provided on its top surface, and the hermetic state between the internal and external atmospheres of the case body 20 is maintained. On the surface of the rotary table 2, circular recesses 24 are provided for placing a plurality of substrates W (five in the illustrated example) along the rotation direction (circumferential direction) as illustrated in FIGS. 2 and 3. In FIG. 3, the substrate W is illustrated in only one recess 24 for convenience. The substrate W may be, for example, a semiconductor wafer. The recess 24 has an inner diameter slightly larger than the diameter of the substrate W and a depth approximately equal to the thickness of the substrate W. When the substrate W is accommodated in the recess 24, the surface of the substrate W and the surface of the rotary table 2 (the area where the substrate W is not placed) are at the same height. The bottom surface of the recess 24 is formed with through holes (none of which are illustrated) through which, for example, thre