US-12618153-B2 - Multiple-metal-containing metal-oxo photoresist films by CVD and ALD methods

Abstract

Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.

Inventors

• Lakmal Kalutarage
• Madhur Sachan
• Mark Saly
• Zhenxing Han

Assignees

• APPLIED MATERIALS, INC.

Dates

Publication Date

20260505

Application Date

20240103

Claims (16)

1. 1 . A method of forming a metal-oxo photoresist, comprising: flowing a first precursor into a chamber, wherein the first precursor comprises a first metal; flowing a second precursor into the chamber, wherein the second precursor comprises a second metal that is different than the first metal, and wherein the second precursor comprises a homoleptic structure; and depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.
2. 2 . The method of claim 1 , wherein the dry deposition process is a chemical vapor deposition (CVD) process.
3. 3 . The method of claim 2 , wherein the first precursor and the second precursor are flown into the chamber at the same time.
4. 4 . The method of claim 2 , wherein the first precursor and the second precursor are sequentially flown into the chamber.
5. 5 . The method of claim 1 , wherein the dry deposition process is an atomic layer deposition (ALD) process.
6. 6 . The method of claim 1 , wherein the first metal comprises tin and the second metal comprises tellurium.
7. 7 . The method of claim 1 , further comprising: flowing an oxidant into the chamber with the first precursor and the second precursor.
8. 8 . The method of claim 1 , wherein the metal-oxo photoresist comprises a bond between the first metal and the second metal.
9. 9 . The method of claim 1 , wherein a composition of the first metal in the metal-oxo photoresist is non-uniform through a thickness of the metal-oxo photoresist.
10. 10 . The method of claim 1 , wherein ligands of the homoleptic structure comprise silicon, germanium, carbon, or nitrogen.
11. 11 . A method of forming a metal-oxo photoresist, comprising: flowing a precursor gas into a chamber, wherein the precursor gas comprises a general formula of MR x L n-x , wherein M is a metal, R is a reactive group, and L is a ligand, and wherein x is equal to 1-4, and n is equal to 1-5; flowing an oxidant into the chamber; and depositing the metal-oxo photoresist onto a substrate in the chamber with a dry deposition process.
12. 12 . The method of claim 11 , wherein the reactive group R is a hydrocarbon that is functionalized.
13. 13 . The method of claim 12 , wherein the hydrocarbon is functionalized by an H, an OR group (where R is a methyl or ethyl), a CN, a NCO, a NCS, a F, a Cl, a Br, an I, an ester, an acid, an oxalate, or an acrylate.
14. 14 . The method of claim 12 , wherein the hydrocarbon is an alkane, an alkene, an alkyne, or an aryl.
15. 15 . The method of claim 11 , L is an amine, an alkoxide, a halide, an NCO, an NCS, a carboxylic acid, an ester, or an acrylate.
16. 16 . The method of claim 11 , wherein the metal M comprises one or more of Sn, Hf, Zr, Co, Cr, Mn, Fe, Cu, Ni, Mo, W, Ta, Os, Re, Pd, Pt, Ti, V, In, Sb, Te, Bi, Al, As, Ge, Se, Cd, Ag, Pb, Au, Er, Yb, Pr, La, Na, or Mg.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 63/444,868, filed on Feb. 10, 2023, the entire contents of which are hereby incorporated by reference herein. BACKGROUND 1) Field Embodiments of the present disclosure pertain to the field of semiconductor processing and, in particular, to chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes for forming multiple-metal-containing metal-oxo photoresist films. 2) Description of Related Art Lithography has been used in the semiconductor industry for decades for creating 2D and 3D patterns in microelectronic devices. The lithography process involves spin-on deposition of a film (photoresist), irradiation of the film with a selected pattern by an energy source (exposure), and removal (etch) of exposed (positive tone) or non-exposed (negative tone) region of the film by dissolving in a solvent. A bake will be carried out to drive off remaining solvent. The photoresist should be a radiation sensitive material and upon irradiation a chemical transformation occurs in the exposed part of the film which enables a change in solubility between exposed and non-exposed regions. Using this solubility change, either exposed or non-exposed regions of the photoresist is removed (etched). Now the photoresist is developed and the pattern can be transferred to the underlying thin film or substrate by etching. After the pattern is transferred, the residual photoresist is removed and repeating this process many times can give 2D and 3D structures to be used in microelectronic devices. Several properties are important in lithography processes. Such important properties include sensitivity, resolution, lower line-edge roughness (LER), etch resistance, and ability to form thinner layers. When the sensitivity is higher, the energy required to change the solubility of the as-deposited film is lower. This enables higher efficiency in the lithographic process. Resolution and LER determine how narrow features can be achieved by the lithographic process. Higher etch resistant materials are required for pattern transferring to form deep structures. Higher etch resistant materials also enable thinner films. Thinner films increase the efficiency of the lithographic process. SUMMARY Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor. Embodiments disclosed herein further include a method of forming a metal-oxo photoresist, comprising flowing a precursor gas into a chamber, where the precursor gas comprises a general formula of MRxLn-x. In an embodiment, M is a metal, R is a reactive group, and L is a ligand, and x is equal to 1-4 and n is equal to 1-5. The method may further comprise flowing an oxidant into the chamber, and depositing the metal-oxo photoresist onto a substrate in the chamber with a dry deposition process. Embodiments disclosed herein may further comprise a metal-oxo photoresist. In an embodiment, the metal-oxo photoresist comprises a first metal element, and a second metal element, where the second metal element is chemically bonded to the first metal element. In an embodiment, the metal-oxo photoresist further comprises carbon bonded to one or both of the first metal element and the second metal element, and oxygen bonded to the first metal element, the second metal element, and/or the carbon. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process flow diagram of a process for depositing a metal-oxo photoresist onto a substrate with a dry deposition process that includes two different metal precursors, in accordance with an embodiment. FIG. 2 is a process flow diagram of a process for depositing a metal-oxo photoresist onto a substrate with a dry deposition process that includes two different metal precursors and an oxidant, in accordance with an embodiment. FIG. 3 is a chemical reaction that uses a first metal precursor and a second metal precursor in order to form a metal-oxo photoresist with a dual metal structure, in accordance with an embodiment. FIG. 4A is an illustration of a metal precursor with a homoleptic ligand structure, in accordance with an embodiment. FIG. 4B is an illustration of an antimony based metal precursor with a homoleptic ligand structure, in accordance with an embodiment. FIG. 5 is a chemical reaction with a first metal precursor and a second metal precursor with a homoleptic ligand structure to form a metal-oxo photoresist with a dual me