Search

US-12618691-B2 - Magnetoresistive sensor with harmonically broadened linear range

US12618691B2US 12618691 B2US12618691 B2US 12618691B2US-12618691-B2

Abstract

A magnetoresistive sensor with harmonically broadened linear range comprises a substrate ( 100 ) and a multiple push-pull magnetoresistive sensing bridge arms. The push arms ( 91 ) of the sensing bridge comprise N types of push magnetoresistive sensing units ( 94 ). The pull arms ( 92 ) comprise N types of pull magnetoresistive sensing units. Key characteristic parameters of each magnetoresistive sensing unit comprise R 0i , MR i , H si , ±α pi and a i . The Key characteristic parameters of the push magnetoresistive sensing units ( 94 ) and corresponding pull magnetoresistive sensing units are different from the key characteristic parameters of standard magnetoresistive sensing unit of a standard push-pull linear magnetoresistive sensor. There is at least one set of key characteristic parameters [(R 0j , MR j , H sj , ±α pj ), a j ]. Linear parts and nonlinear harmonic parts of R-H characteristic parameters that characterize the push magnetoresistive sensing units and the pull magnetoresistive sensing units are superimposed, so that the linear range of the multiple push-push magnetoresistive sensing bridge is greater than the linear range of the standard push-pull linear magnetoresistive sensor.

Inventors

  • James Geza Deak
  • Zhimin Zhou

Assignees

  • MultiDimension Technology Co., Ltd.

Dates

Publication Date
20260505
Application Date
20210106
Priority Date
20200110

Claims (9)

  1. 1 . A magnetoresistive sensor with harmonically broadened linear range, comprising: a substrate; and a multiple push-pull magnetoresistive sensing bridge arms positioned on the substrate, the multiple push-pull magnetoresistive sensing bridge arms comprising push arms and pull arms, the push arms comprising N types of push magnetoresistive sensing units, the pull arms comprising N types of pull magnetoresistive sensing units, and N being an integer greater than 1; wherein key characteristic parameters of each magnetoresistive sensing unit comprises a zero magnetic field resistance R 0 i , a magnetoresistance change rate MR i , a free layer saturation magnetic field H si , a direction angle ±α pi of pinned layer magnetic moment, and a series-parallel coefficient a i , wherein the push magnetoresistive sensing unit has the direction angle +α pi of the pinned layer magnetic moment, and the pull magnetoresistive sensing unit has the direction angle −α pi of the pinned layer magnetic moment, i being an integer from 1 to N; the key characteristic parameters of the push magnetoresistive sensing units and corresponding pull magnetoresistive sensing units are different from the key characteristic parameters of standard magnetoresistive sensing unit of a standard push-pull linear magnetoresistive sensor; there is at least one set of key characteristic parameters [(R 0 j , MR j , H sj , ±α pj ), a j ], j being an integer greater than or equal to 1 and less than or equal to N; linear parts and nonlinear harmonic parts of R-H characteristic parameters that characterize the push magnetoresistive sensing units and the corresponding pull magnetoresistive sensing units are superimposed, so that the linear range of the multiple push-push magnetoresistive sensing bridge is greater than the linear range of the standard push-pull linear magnetoresistive sensor, wherein the key characteristic parameters of the standard magnetoresistive sensing unit are [(R 0 s , MR s , H ss , ± ps ), a s ], ±α ps =90°, a s =1.
  2. 2 . The magnetoresistive sensor according to claim 1 , wherein the N types of push magnetoresistive sensing units that constitute the push arms are connected in parallel, and the N types of pull magnetoresistive sensing units that constitute the pull arms are connected in parallel; the resistance R push of the push arm, the resistance R pull of the pull arm, and the resistance R i of the multiple push-pull magnetoresistive sensing bridge arms meet the following relationships: 1 R push = ∑ i = 1 N a i R i ( R ⁢ 0 i , MR i , H si , + α pi ) , 1 R pull = ∑ i = 1 N a i R i ( R ⁢ 0 i , MR i , H si , - α pi ) , wherein R i (R 0 i , MR i , H si , ±α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the push magnetoresistive sensing unit, and R i (R 0 i , MR i , H si , −α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the pull magnetoresistive sensing unit.
  3. 3 . The magnetoresistive sensor according to claim 1 , wherein the N types of push magnetoresistive sensing units that constitute the push arms are connected in series, and the N types of pull magnetoresistive sensing units that constitute the pull arms are connected in series; the resistance R push of the push arm, the resistance R pull of the pull arm, and the resistance R i of the multiple push-pull magnetoresistive sensing bridge arms meet the following relationships: R push = ∑ i = 1 N a i · R i ( R ⁢ 0 i , MR i , H si , + α pi ) , R pull = ∑ i = 1 N a i · R i ( R ⁢ 0 i , MR i , H si , - α pi ) , wherein R i (R 0 i , MR i , H si , +α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the push magnetoresistive sensing unit, and R i (R 0 i , MR i , H si , −α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the pull magnetoresistive sensing unit.
  4. 4 . The magnetoresistive sensor according to claim 1 , wherein the N types of push magnetoresistive sensing units that constitute the push arms are connected in a hybrid series-parallel manner, and the N types of pull magnetoresistive sensing units that constitute the pull arms are connected in a hybrid series-parallel manner; the resistance R push of the push arm, the resistance R pull of the pull arm, and the resistance R i of the multiple push-pull magnetoresistive sensing bridge arms meet the following relationships: R push = ∑ i = 1 N a i · R i ( R ⁢ 0 i , MR i , H s ⁢ i , + α pi ) + 1 ∑ i = s + 1 N a i R i ( R ⁢ 0 i , MR i , H si , + α pi ) , R pull = ∑ i = 1 N a i · R i ( R ⁢ 0 i , MR i , H s ⁢ i , - α pi ) + 1 ∑ i = s + 1 N a i R i ( R ⁢ 0 i , MR i , H si , - α pi ) , wherein R i (R 0 i , MR i , H si , +α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the push magnetoresistive sensing unit, and R i (R 0 i , MR i , H si , −α pi ) characterizes a resistance value corresponding to four key characteristic parameters of the pull magnetoresistive sensing unit, m being an integer greater than or equal to 1 and less than or equal to N.
  5. 5 . The magnetoresistive sensor according to claim 1 , further comprising a magnetoresistive shunt resistor R sh positioned on the substrate, wherein the magnetoresistive shunt resistor R sh is connected to the multiple push-pull magnetoresistive sensing bridge arms, the key characteristic parameters of the magnetoresistive shunt resistor R sh are [(R 0 sh , MR sh , H ssh , +α psh ), a sh ]; there is at least one set of key characteristic parameters {[(R 0 sh , MR sh , H ssh , ±α ps h), a sh ] and [(R 0 i , MR i , H si , ±α pi ), a i ]}, so that the R-H characteristic parameters of the magnetoresistive shunt resistor R sh are superimposed with the R-H characteristic parameters of the push magnetoresistive sensing units and the pull magnetoresistive sensing units in the multiple push-pull magnetoresistive sensing bridge arms.
  6. 6 . The magnetoresistive sensor according to claim 1 , wherein the direction angle of the pinned layer magnetic moment of the magnetoresistive sensing unit of the multiple push-pull magnetoresistive sensing bridge arms has a value range of 0°-360°.
  7. 7 . The magnetoresistive sensor according to claim 1 , wherein the zero magnetic field resistance of the magnetoresistive sensing unit of the multiple push-pull magnetoresistive sensing bridge arms has a value range of 1 KΩ-1000 MΩ.
  8. 8 . The magnetoresistive sensor according to claim 1 , wherein the free layer saturation magnetic field of the magnetoresistive sensing unit of the multiple push-pull magnetoresistive sensing bridge arms has a value range of 1-100 Oe.
  9. 9 . The magnetoresistive sensor according to claim 1 , wherein the ratio of the linear range of the multiple push-pull magnetoresistive sensing bridge arms to the linear range of the standard push-pull linear magnetoresistive sensor is greater than 1 and less than or equal to 2.

Description

PRIORITY CLAIM TO RELATED APPLICATIONS This application is a U.S. national stage filing under 35 U.S.C. § 371 from International Application No. PCT/CN2021/070518, filed on 6 Jan. 2021, which claims priority to Chinese Application No. 202010028130.1, filed on 10 Jan. 2020. This application incorporates by reference the entirety of International Application No. PCT/CN2021/070518 and its published version WO2021/139695 (published 15 Jul. 2021). TECHNICAL FIELD Embodiments of the present disclosure relate to magnetic sensor technology, and in particular, relates to a magnetoresistive sensor with harmonically broadened linear range. BACKGROUND A magnetoresistive sensing unit includes a free layer, a pinned layer, and an intermediate insulating layer. In practical use, a push-pull linear tunneling magnetoresistive sensor includes push magnetoresistive sensing units and pull magnetoresistive sensing units, and the angle difference, anglePL-angleFL, between free layer magnetic moment and pinned layer magnetic moment of the sensing units respectively are between 90° and −90°, wherein anglePL is a direction angle αp of the pinned layer magnetic moment, and angleFL is a direction angle αf of the free layer magnetic moment. The relationship between the resistance R of the push-pull linear tunneling magnetoresistive sensor and an external magnetic field H can be described by a zero magnetic field resistance R0, a magnetoresistance change rate MR, and a free layer saturation magnetic field Hs of the magnetoresistive sensing unit, which is symmetrical in a linear range [−HL, HL]. The linear range of the existing push-pull linear tunneling magnetoresistive sensors is narrow. SUMMARY The embodiments of the present disclosure provide a magnetoresistive sensor with harmonically broadened linear range, to improve the linear range of a push-pull linear tunneling magnetoresistive sensor. The embodiments of the present disclosure provide a magnetoresistive sensor with harmonically broadened linear range, including: a substrate; andmultiple push-pull magnetoresistive sensing bridge arms positioned on the substrate, the multiple push-pull magnetoresistive sensing bridge arms including push arms and pull arms, the push arms including N types of push magnetoresistive sensing units, the pull arms including N types of pull magnetoresistive sensing units, and N being an integer greater than 1; where key characteristic parameters of each magnetoresistive sensing unit includes a zero magnetic field resistance R0i, a magnetoresistance change rate MRi, a free layer saturation magnetic field Hsi, a direction angle ±αpi of pinned layer magnetic moment, and a series-parallel coefficient ai, wherein the push magnetoresistive sensing unit has the direction angle ±αpi of the pinned layer magnetic moment, and the pull magnetoresistive sensing unit has the direction angle −αpi of the pinned layer magnetic moment, i being an integer from 1 to N; the key characteristic parameters of the push magnetoresistive sensing units and corresponding pull magnetoresistive sensing units are different from the key characteristic parameters of standard magnetoresistive sensing unit of a standard push-pull linear magnetoresistive sensor;there is at least one set of key characteristic parameters [(R0j, MRj, Hsj, ±αpj), aj], j being an integer greater than or equal to 1 and less than or equal to N. Linear parts and nonlinear harmonic parts of R-H characteristic parameters that characterize the push magnetoresistive sensing units and corresponding pull magnetoresistive sensing units are superimposed, so that the linear range of the multiple push-push magnetoresistive sensing bridge is greater than the linear range of the standard push-pull linear magnetoresistive sensor, wherein the key characteristic parameters of the standard magnetoresistive sensing unit are [(R0s, MRs, Hss, ±αps), as], ±αps=90°, as=1. In the embodiment of the present disclosure, two or more magnetoresistive sensing units with different key characteristic parameters are arranged in the push-pull magnetoresistive sensor, and the magnetoresistive sensing units are connected in series, parallel, or a hybrid series-parallel manner to constitute a new multiple push-pull magnetoresistive sensor. The multiple push-pull magnetoresistive sensor has at least one set of key characteristic parameters [(R0j, MRj, Hsj, ±αpj), aj]. Linear parts and nonlinear harmonic parts of R-H characteristic parameters that characterize the push magnetoresistive sensing units and corresponding pull magnetoresistive sensing units are superimposed, so that the linear range of the multiple push-pull magnetoresistive sensing bridge arms is greater than the linear range of the standard push-pull linear magnetoresistive sensor, and thus the linear range is improved. BRIEF DESCRIPTION OF THE DRAWINGS In order to more clearly describe the technical solutions of the embodiments of the present disclosure and prior art, drawings require