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US-12619004-B2 - Rutile phase tiox deposition with preferred crystal orientations

US12619004B2US 12619004 B2US12619004 B2US 12619004B2US-12619004-B2

Abstract

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.

Inventors

  • Kenichi Ohno
  • Takashi KURATOMI

Assignees

  • APPLIED MATERIALS, INC.

Dates

Publication Date
20260505
Application Date
20220930

Claims (20)

  1. 1 . A method of forming an optical device layer stack, comprising: depositing a titanium containing layer on a substrate; thermally treating the titanium containing layer to form an orientation liner on the substrate; and depositing an optical device layer of titanium oxide over the orientation liner, wherein a rutile phase of titanium oxide is about 100 percent of the optical device layer.
  2. 2 . The method of claim 1 , wherein the titanium containing layer is formed of pure titanium or titanium oxide.
  3. 3 . The method of claim 1 , wherein the titanium oxide of the optical device layer is selected from the group consisting of titanium(IV) oxide (TiO 2 ), titanium monoxide (TiO), dititanium trioxide (Ti 2 O 3 ), Ti 3 O, Ti 2 O, b-TiO x , where x is 0.68 to 0.75, and Ti n O 2n-1 , where n is 3 to 9.
  4. 4 . The method of claim 1 , wherein thermally treating the titanium containing layer comprises perform a thermal annealing processing process, wherein an annealing temperature is between about 400 degrees Celsius and about 1500 degree Celsius.
  5. 5 . The method of claim 1 , wherein thermally treating the titanium containing layer comprises flowing an annealing gas, wherein the annealing gas is selected from the group consisting of air, O 2 , N 2 , Ar, Kr, Xe, H 2 O, H 2 , and combinations thereof.
  6. 6 . The method of claim 1 , wherein thermally treating the titanium containing layer comprises perform a thermal annealing processing process for an annealing time between about 1 minute and about 72 hours.
  7. 7 . The method of claim 1 , wherein the deposition used to deposit the titanium containing layer is one of a physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), low pressure chemical vapor deposition (LPCVD), electron-beam evaporation, or thermal evaporation process.
  8. 8 . The method of claim 1 , wherein the deposition used to deposit the optical device layer is one of a physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), low pressure chemical vapor deposition (LPCVD), electron-beam evaporation, or thermal evaporation process.
  9. 9 . The method of claim 1 , wherein the titanium containing layer comprises a thickness less than about 20 nm.
  10. 10 . The method of claim 1 , wherein the optical device layer comprises a thickness less than about 1000 nm.
  11. 11 . An optical device layer stack comprising: a substrate having a first surface; an orientation liner disposed over the first surface of the substrate; and an optical device layer disposed over the orientation liner, wherein: the orientation liner is formed of a titanium containing material; the optical device layer is formed of titanium oxide, the titanium oxide selected from the group consisting of titanium(IV) oxide (TiO 2 ), titanium monoxide (TiO), dititanium trioxide (Ti 2 O 3 ), Ti 3 O, Ti 2 O, δ-TiO x , where x is 0.68 to 0.75, and Ti n O2n−1, where n is 3 to 9; and a rutile phase of the titanium oxide is about 100 percent of the optical device layer.
  12. 12 . The optical device of claim 11 , wherein a crystal orientation of the titanium oxide in the optical device layer is one of (211), (110), (101), (200), (111), (210), (220), (002), (221), (301), (311), (320), (202), (212), (321), (400), or (410).
  13. 13 . The optical device of claim 11 , wherein a crystal orientation of the titanium oxide in the optical device layer is (211).
  14. 14 . The optical device of claim 11 , wherein the orientation liner and the optical device layer are crystalline.
  15. 15 . The optical device of claim 11 , wherein the orientation liner and the optical device layer are polycrystalline.
  16. 16 . The optical device of claim 11 , wherein a crystal orientation of the optical device layer is matched to the orientation liner.
  17. 17 . The optical device of claim 11 , wherein a crystal phase of the optical device layer is matched to the orientation liner.
  18. 18 . The optical device of claim 11 , wherein an optical loss of visible range light transmitted through the optical device layer is about 0.03%.
  19. 19 . An optical device comprising: a substrate having a first surface; a plurality of optical device structures disposed over the first surface of the substrate, the plurality of optical device structures spaced apart from each other in a direction parallel to the first surface, wherein each optical device structure of the plurality of optical device structures is formed from an orientation liner and an optical device layer disposed on the substrate, the orientation liner is formed of a titanium containing material; the optical device layer is formed of titanium oxide; the titanium oxide in the optical device layer is selected from the group consisting of titanium(IV) oxide (TiO 2 ), titanium monoxide (TiO), dititanium trioxide (Ti 2 O 3 ), Ti 3 O, Ti 2 O, b-TiO x , where x is 0.68 to 0.75, and Ti n O 2n-1 , where n is 3 to 9; and a rutile phase of the titanium oxide is about 100 percent of the optical device layer.
  20. 20 . The optical device of claim 19 , wherein an optical loss of visible range light transmitted through the plurality of optical device structures is about 0.03%.

Description

RELATED APPLICATIONS This application claims benefit of and priority to U.S. Provisional Application No. 63/255,064 filed Oct. 13, 2021, and U.S. Provisional Application No. 63/270,130, filed Oct. 21, 2021, which are herein incorporated in their entirety by reference for all purposes. BACKGROUND Field Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack. Description of the Related Art Virtual reality is generally considered to be a computer generated simulated environment in which a user has an apparent physical presence. A virtual reality experience can be generated in 3D and viewed with a head-mounted display (HMD), such as glasses or other wearable display devices that have near-eye display panels as lenses to display a virtual reality environment that replaces an actual environment. Augmented reality, however, enables an experience in which a user can still see through the display lenses of the glasses or other HMD device to view the surrounding environment, yet also see images of virtual objects that are generated to appear as part of the environment. Augmented reality can include any type of input, such as audio and haptic inputs, as well as virtual images, graphics, and video that enhances or augments the environment that the user experiences. As an emerging technology, there are many challenges and design constraints with augmented reality. One such challenge is displaying a virtual image overlaid on an ambient environment. Optical devices including waveguide combiners, such as augmented reality waveguide combiners, and flat optical devices, such as metasurfaces, are used to assist in overlaying images. Generated light is propagated through an optical device until the light exits the optical device and is overlaid on the ambient environment. Accordingly, what is needed in the art is an optical device film, an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack. SUMMARY In one embodiment, a method for forming an optical device layer stack is provided. The method includes depositing a titanium containing layer on a substrate and thermally treating the titanium containing layer to form an orientation liner on the substrate. Then, an optical device layer of titanium oxide is deposited over the orientation liner. A rutile phase titanium oxide makes up about 100 percent of the optical device layer deposited on the orientation liner. In another embodiment, an optical device layer stack is provided. The optical device layer stack includes a substrate having a first surface and an orientation liner disposed over the first surface of the substrate. The optical device layer stack also includes an optical device layer disposed over the orientation liner. The orientation liner is formed of a titanium containing material and the optical device layer is formed of titanium oxide selected from the group consisting of titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, δ-TiOx, where x is 0.68 to 0.75, and TinO2n−1, where n is 3 to 9. A rutile phase of the titanium oxide is about 100 percent of the optical device layer. In yet another embodiment, an optical device is provided. The optical device includes a substrate having a first surface and a plurality of optical device structures disposed over the first surface of the optical device substrate. The plurality of optical device structures on the substrate are spaced apart from one another in a direction parallel to the first surface of the substrate. Each of the plurality of optical device structures is formed from an orientation liner and an optical device layer disposed on the substrate. The orientation liner in each of the optical device structure is formed of a titanium containing material and the optical device layer is formed of titanium oxide. The titanium oxide in the optical device layer is selected from the group consisting of titanium oxide titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, δ-TiOx, where x is 0.68 to 0.75, and TinO2n-1, where n is 3 to 9. A rutile phase of the titanium oxide is about 100 percent of the optical device layer. BRIEF DESCRIPTION OF THE DRAWINGS So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments. FIG. 1 i