US-12619146-B2 - Actinic-ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

US12619146B2US 12619146 B2US12619146 B2US 12619146B2US-12619146-B2

Abstract

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) and a resin (B) which include a repeating unit having an acid-decomposable group, and the acid-decomposable group in the resin (A) and the acid-decomposable group in the resin (B) have the same structures. Regarding the resin (A) and the resin (B), |G A −G B | is from 5% by mole to 20% by mole, S A /S B is 10/90 to 90/10, |Mw A −Mw B | is from 100 to 5,000, and |Mw A /Mn A −Mw B /Mn B | is 0.05 or more.

Inventors

Fumihiro Yoshino
Takamitsu Tomiga
Yuma Kurumisawa
Takumi Tanaka

Assignees

FUJIFILM CORPORATION

Dates

Publication Date: 20260505
Application Date: 20230124
Priority Date: 20200729

Claims (13)

1 . An actinic ray-sensitive or radiation-sensitive resin composition comprising: a resin (A) including a repeating unit having an acid-decomposable group; and a resin (B) including a repeating unit having an acid-decomposable group, wherein an absolute value |G A −G B | of a difference between a mole-based content ratio G A of the repeating unit having an acid-decomposable group in the resin (A) and a mole-based content ratio G B of the repeating unit having an acid-decomposable group in the resin (B) is from 5% by mole to 20% by mole, the acid-decomposable group in the resin (A) and the acid-decomposable group in the resin (B) have the same structures, a ratio S A /S B between a mass-based content ratio S A of the resin (A) to a mass-based content ratio S B of the resin (B) with respect to a total solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 10/90 to 90/10, an absolute value |Mw A −Mw B | of a difference between a weight-average molecular weight Mw A of the resin (A) and a weight-average molecular weight Mw B of the resin (B) is from 1,000 to 5,000, an absolute value |Mw A /Mn A −Mw B /Mn B | of a difference between a molecular weight distribution Mw A /Mn A of the resin (A), which is a value obtained by dividing Mw A by a number-average molecular weight Mn A of the resin (A), and a molecular weight distribution Mw B /Mn B of the resin (B), which is a value obtained by dividing Mw B by a number-average molecular weight Mn B of the resin (B), is 0.05 or more, and the repeating unit having an acid-decomposable group included in the resin (A) and the resin (B) is represented by General Formula (Aa2), in General Formula (Aa2), R 101 represents a hydrogen atom, a fluorine atom, an iodine atom, an alkyl group, or an aryl group, and R 102 represents a group that leaves by an action of an acid.
2 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein S A /S B is 40/60 to 60/40.
3 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein a viscosity at 25° C. is 10 to 100 mPa·s.
4 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein |G A −G B | is from 10% by mole to 20% by mole.
5 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein G A is 30% by mole or less.
6 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein |Mw A /Mn A −Mw B /Mn B | is 0.10 or more.
7 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein an absolute value |Mz A −Mz B | of a difference between a Z-average molecular weight Mz A of the resin (A) and a Z-average molecular weight Mz B of the resin (B) is 100 or more.
8 . The actinic ray-sensitive or radiation-sensitive resin composition according to claim 7 , wherein |Mz A −Mz B | is 1,000 or more.
9 . A resist film formed of the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 .
10 . A pattern forming method comprising: forming a resist film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ; exposing the resist film to obtain an exposed resist film; and developing the exposed resist film using a developer to form a pattern.
11 . The pattern forming method according to claim 10 , wherein a light source for the exposure is KrF.
12 . The pattern forming method according to claim 10 , wherein a thickness of the resist film formed on the substrate is 500 nm or more.
13 . A method for manufacturing an electronic device, comprising the pattern forming method according to claim 10 .

Description

CROSS REFERENCE TO RELATED APPLICATION This is a continuation of International Application No. PCT/JP2021/025206 filed on Jul. 2, 2021, and claims priority from Japanese Patent Application No. 2020-128367 filed on Jul. 29, 2020, the entire disclosures of which are incorporated herein by reference. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufacturing an electronic device. 2. Description of the Related Art In processes for manufacturing semiconductor devices such as an integrated circuit (IC) and a large scale integrated circuit (LSI), microfabrication by lithography using an actinic ray-sensitive or radiation-sensitive resin composition has been performed. Examples of the lithography method include a method of forming a resist film by an actinic ray-sensitive or radiation-sensitive resin composition, and then exposing the obtained resist film, followed by performing development to form a resist pattern. As the actinic ray-sensitive or radiation-sensitive resin composition, those containing a resin including a repeating unit having an acid-decomposable group (acid-decomposable resin) are known. In recent years, an actinic ray-sensitive or radiation-sensitive resin composition suitable for forming a pattern using a thick-film resist film has also been proposed (see, for example, WO2017/078031A). A resist composition in which two kinds of resins including a repeating unit having an acid-decomposable group are used in combination is described in WO2017/078031A. SUMMARY OF THE INVENTION An actinic ray-sensitive or radiation-sensitive resin composition which has a good sensitivity and is capable of forming a pattern having an excellent cross-sectional shape is disclosed in WO2017/078031A, but according to the studies conducted by the present inventors, it was found that there is room for further improvement in critical dimension uniformity (CDU) exhibiting the uniformity of pattern dimensions in a wafer plane. An object of the present invention is to form an actinic ray-sensitive or radiation-sensitive resin composition capable of forming a pattern having an excellent CDU, and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The present inventors have found that the objects can be accomplished by the following configurations. <1> An actinic ray-sensitive or radiation-sensitive resin composition comprising: a resin (A) including a repeating unit having an acid-decomposable group; anda resin (B) including a repeating unit having an acid-decomposable group,in which an absolute value |GA−GB| of a difference between a mole-based content ratio GA of the repeating unit having an acid-decomposable group in the resin (A) and a mole-based content ratio GB of the repeating unit having an acid-decomposable group in the resin (B) is from 5% by mole to 20% by mole,the acid-decomposable group in the resin (A) and the acid-decomposable group in the resin (B) have the same structures,a ratio SA/SB between a mass-based content ratio SA of the resin (A) to a mass-based content ratio SB of the resin (B) with respect to a total solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 10/90 to 90/10,an absolute value |MwA−MwB| of a difference between a weight-average molecular weight MwA of the resin (A) and a weight-average molecular weight MwB of the resin (B) is from 100 to 5,000, andan absolute value |MwA/MnA−MwB/MnB| of a difference between a molecular weight distribution MwA/MnA of the resin (A), which is a value obtained by dividing MwA by a number-average molecular weight MnA of the resin (A), and a molecular weight distribution MwB/MnB of the resin (B), which is a value obtained by dividing MwB by a number-average molecular weight MnB of the resin (B), is 0.05 or more. <2> The actinic ray-sensitive or radiation-sensitive resin composition as described in <1>, in which the repeating unit having an acid-decomposable group included in the resin (A) and the resin (B) is represented by General Formula (Aa2). In General Formula (Aa2), R101 represents a hydrogen atom, a fluorine atom, an iodine atom, an alkyl group, or an aryl group, and R102 represents a group that leaves by an action of an acid. <3> The actinic ray-sensitive or radiation-sensitive resin composition as described in <1> or <2>, in which SA/SB is 40/60 to 60/40. <4> The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of <1> to <3>, in which a viscosity at 25° C. is 10 to 100 mPa·s. <5> The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of <1> to <4>, in which |GA−GB| is from 10% by mole to 20% by mole. <6> The actinic ray-sensitive or radiation-sensitive resin compositi