US-12620433-B2 - Semiconductor device and semiconductor system related to compensating for the generation timing of an internal command

US12620433B2US 12620433 B2US12620433 B2US 12620433B2US-12620433-B2

Abstract

A semiconductor device includes a frequency division circuit configured to generate a first division clock and a second division clock by dividing a frequency of a clock, and an internal command generation circuit configured to generate an internal command based on a command in synchronization with the first division clock and the second division clock, configured to latch, in a pipe latch, a phase detection signal that is generated based on the timing at which the command is received, and configured to compensate for generation timing of the internal command based on the phase detection signal that has been latched in the pipe latch.

Inventors

Joon Hong Park
Jeong Je Park
Sang Sic Yoon
Jong Hyuck CHOI

Assignees

SK Hynix Inc.

Dates

Publication Date: 20260505
Application Date: 20231213
Priority Date: 20230724

Claims (20)

1 . A semiconductor device comprising: a frequency division circuit configured to receive a clock to generate a first division clock and a second division clock by dividing a frequency of the clock; and an internal command generation circuit configured to receive a command in synchronization with the first division clock and the second division clock to generate an internal command based on the command received in synchronization with the first division clock and the second division clock, configured to latch, in a pipe latch, a phase detection signal that is generated based on timing at which the command is received, and configured to compensate for generation timing of the internal command based on the phase detection signal that has been latched in the pipe latch.
2 . The semiconductor device of claim 1 , wherein the frequency division circuit generates the first division clock comprising a pulse that has a ½ frequency of the clock and that is generated in synchronization with an odd-numbered pulse of the clock, and wherein the frequency division circuit generates the second division clock comprising a pulse that has a ½ frequency of the clock and that is generated in synchronization with an even-numbered pulse of the clock.
3 . The semiconductor device of claim 1 , wherein the frequency division circuit generates the first division clock and the second division clock having opposite phases by dividing the frequency of the clock.
4 . The semiconductor device of claim 1 , wherein the internal command generation circuit comprises: a phase detection circuit configured to generate the phase detection signal and a first input command signal by latching the command in synchronization with the first division clock and the second division clock: a synthesis command generation circuit configured to generate a synthesis command by synchronizing the command and the first input command signal in synchronization with the first division clock; a shifting circuit configured to generate a shifting signal by shifting the synthesis command by a set interval; a selection signal generation circuit configured to latch the phase detection signal in the pipe latch in synchronization with the synthesis command and configured to generate a selection signal based on the phase detection signal that has been stored in the pipe latch, in synchronization with the shifting signal; and a command phase control circuit configured to generate the internal command by shifting the shifting signal in response to the selection signal in synchronization with the clock.
5 . The semiconductor device of claim 4 , wherein the phase detection circuit comprises: a first command input circuit configured to generate the phase detection signal by latching the command in synchronization with the second division clock; and a second command input circuit configured to generate the first input command signal by latching the phase detection signal in synchronization with the first division clock.
6 . The semiconductor device of claim 4 , wherein the synthesis command generation circuit comprises: a third command input circuit configured to generate a second input command signal by latching the command in synchronization with the first division clock; and a signal synthesis circuit configured to generate the synthesis command by synthesizing the first input command signal and the second input command signal.
7 . The semiconductor device of claim 4 , wherein the shifting circuit comprises: a transfer signal generation circuit configured to generate a first transfer signal and a second transfer signal that are sequentially generated, by shifting the synthesis command in synchronization with the first division clock; and a selection transfer circuit configured to output any one of the first transfer signal and the second transfer signal as the shifting signal based on a first latency signal and a second latency signal comprising information with regard to the set interval.
8 . The semiconductor device of claim 4 , wherein the selection signal generation circuit comprises: an input control signal generation circuit configured to generate an input control signal that is enabled when the synthesis command is input; an output control signal generation circuit configured to generate an output control signal that is enabled when the shifting signal is input; and a pipe circuit configured to latch the phase detection signal when the input control signal is generated and configured to generate the selection signal based on the phase detection signal that has been latched, when the output control signal is generated.
9 . The semiconductor device of claim 4 , wherein the command phase control circuit comprises: a transfer command generation circuit configured to generate a first transfer command and a second transfer command that are sequentially generated, by shifting the shifting signal in synchronization with the clock; and a command selection circuit configured to output any one of the first transfer command and the second transfer command as the internal command in response to the selection signal.
10 . A semiconductor system comprising: a controller configured to output a clock that is periodically toggled and configured to output a command, an address, and data; and a semiconductor device configured to sequentially latch, in multiple pipe latches, a phase detection signal that is generated by detecting input timing of the command that is input in synchronization with the clock, configured to compensate for generation timing of an internal command that is generated from the command based on the phase detection signal that has been latched in the multiple pipe latches, and configured to store the data based on the internal command and the address.
11 . The semiconductor system of claim 10 , wherein the semiconductor device comprises: a frequency division circuit configured to generate a first division clock and a second division clock by dividing a frequency of the clock; an internal command generation circuit configured to generate the internal command based on the command in synchronization with the first division clock and the second division clock, configured to sequentially latch, in the multiple pipe latches, the phase detection signal that is generated based on the input timing of the command in synchronization with a pulse of the clock, and configured to compensate for the generation timing of the internal command based on the phase detection signal that has been latched in the multiple pipe latches; an internal address generation circuit configured to generate an internal address by decoding the address in synchronization with the clock; and a memory circuit configured to store the data based on the internal address when the internal command is generated.
12 . The semiconductor system of claim 11 , wherein the frequency division circuit generates the first division clock comprising a pulse that has a ½ frequency of the clock and that is generated in synchronization with an odd-numbered pulse of the clock, and wherein the frequency division circuit generates the second division clock comprising a pulse that has a ½ frequency of the clock and that is generated in synchronization with an even-numbered pulse of the clock.
13 . The semiconductor system of claim 11 , wherein the frequency division circuit generates the first division clock and the second division clock having opposite phases by dividing the frequency of the clock.
14 . The semiconductor system of claim 11 , wherein: the internal command generation circuit latches, in a first pipe latch, the phase detection signal that is generated when the command is input in synchronization with a first pulse of the clock, and the internal command generation circuit latches, in a second pipe latch, the phase detection signal that is generated when the command is input in synchronization with a second pulse of the clock.
15 . The semiconductor system of claim 14 , wherein the second pulse of the clock is a pulse that is generated after the first pulse of the clock is generated.
16 . The semiconductor system of claim 14 , wherein the phase detection signal is a signal that is disabled when the command is input in synchronization with the first division clock and that is enabled when the command is input in synchronization with the second division clock.
17 . The semiconductor system of claim 11 , wherein the internal command generation circuit comprises: a phase detection circuit configured to generate the phase detection signal and a first input command signal by latching the command in synchronization with the first division clock and the second division clock: a synthesis command generation circuit configured to generate a synthesis command by synchronizing the command and the first input command signal in synchronization with the first division clock; a shifting circuit configured to generate a shifting signal by shifting the synthesis command by a set interval; a selection signal generation circuit configured to sequentially latch the phase detection signal in the multiple pipe latches in synchronization with the synthesis command and configured to generate a selection signal based on the phase detection signal that has been latched in the multiple pipe latches, in synchronization with the shifting signal; and a command phase control circuit configured to generate the internal command by shifting the shifting signal in response to the selection signal in synchronization with the clock.
18 . The semiconductor system of claim 17 , wherein the phase detection circuit comprises: a first command input circuit configured to generate the phase detection signal by latching the command in synchronization with the second division clock; and a second command input circuit configured to generate the first input command signal by latching the phase detection signal in synchronization with the first division clock.
19 . The semiconductor system of claim 17 , wherein the synthesis command generation circuit comprises: a third command input circuit configured to generate a second input command signal by latching the command in synchronization with the first division clock; and a signal synthesis circuit configured to generate the synthesis command by synthesizing the first input command signal and the second input command signal.
20 . The semiconductor system of claim 17 , wherein the shifting circuit comprises: a transfer signal generation circuit configured to generate a first transfer signal and a second transfer signal that are sequentially generated, by shifting the synthesis command in synchronization with the first division clock; and a selection transfer circuit configured to output any one of the first transfer signal and the second transfer signal as the shifting signal based on a first latency signal and a second latency signal comprising information with regard to the set interval.

Description

CROSS-REFERENCE TO RELATED APPLICATION The present application claims priority under 35 U.S.C. § 119 (a) to Korean Patent Application No. 10-2023-0096426, filed in the Korean Intellectual Property Office on Jul. 24, 2023, the entire disclosure of which is incorporated herein by reference. BACKGROUND 1. Technical Field The present disclosure generally relates to a semiconductor device and semiconductor system, and more particularly a semiconductor device and semiconductor system configured to latch, in a pipe latch, a phase detection signal that is generated by detecting the input timing of a command that is input in synchronization with a clock and configured to compensate for the generation timing of an internal command that is generated from the command based on the phase detection signal that has been latched in the pipe latch. 1. Related Art In general, a semiconductor device including double data rate synchronous DRAM (DDR SDRAM) performs internal operations in response to a command that is input by an external chip set. In order for the semiconductor device to perform such read and write operations, the semiconductor device needs to include various circuits. The various circuits include a pipe circuit for efficiently controlling more signals. In general, the pipe circuit is a circuit configured to store each of a plurality of input signals at desired timing and to output each signal at desired timing. The pipe circuit is included in the semiconductor device, and can increase the transmission and reception of signals between internal circuits or between an external device of the semiconductor device and an internal circuit of the semiconductor device. Furthermore, the semiconductor device includes a shifting circuit configured to shift a command by using multiple division clocks that are generated by dividing the frequency of a clock. Such a semiconductor device includes multiple shifting circuits by multiple division clocks, and may generate an internal command for performing an internal operation by shifting a command. SUMMARY In an embodiment, a semiconductor device may include a frequency division circuit configured to receive a clock to generate a first division clock and a second division clock by dividing a frequency of the clock, and an internal command generation circuit configured to receive a command in synchronization with the first division clock and the second division clock to generate an internal command based on the command received in synchronization with the first division clock and the second division clock, configured to latch, in a pipe latch, a phase detection signal that is generated based on the timing at which the command is received, and configured to compensate for generation timing of the internal command based on the phase detection signal that has been latched in the pipe latch. Furthermore, in an embodiment, a semiconductor system may include a controller configured to output a clock that is periodically toggled and configured to output a command, an address, and data, and a semiconductor device configured to sequentially latch, in multiple pipe latches, a phase detection signal that is generated by detecting input timing of the command that is input in synchronization with the clock, configured to compensate for generation timing of an internal command that is generated from the command based on the phase detection signal that has been latched in the multiple pipe latches, and configured to store the data based on the internal command and the address. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram illustrating a construction of a semiconductor system according to an embodiment of the present disclosure. FIG. 2 is a block diagram illustrating a construction according to an embodiment of a semiconductor device that is included in the semiconductor system illustrated in FIG. 1. FIG. 3 is a block diagram illustrating a construction according to an embodiment of a frequency division circuit that is included in the semiconductor device illustrated in FIG. 2. FIG. 4 is a timing diagram for describing an example of an operation of the frequency division circuit illustrated in FIG. 3. FIG. 5 is a block diagram illustrating a construction according to an embodiment of an internal command generation circuit that is included in the semiconductor device illustrated in FIG. 2. FIG. 6 is a block diagram illustrating a construction according to an embodiment of a phase detection circuit that is included in the internal command generation circuit illustrated in FIG. 5. FIG. 7 is a diagram illustrating a construction according to an embodiment of a synthesis command generation circuit that is included in the internal command generation circuit illustrated in FIG. 5. FIG. 8 is a block diagram illustrating a construction according to an embodiment of a shifting circuit that is included in the internal command generation circuit illustrated in FIG. 5. FIG. 9 is a block diagram